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Special Issue Information

Dear Colleagues,

Focused electron beam (FEB) and focused ion beam (FIB) technologies have revolutionized material science research and technology, and they have offered novel possibilities for material imaging, analysis, modification, and fabrication with high spatial resolution mainly using electrons and gallium, neon, and helium ions.

In the last few years, several experimental and theoretical approaches have been developed and implemented in the area, such as deposition, etching, and sputtering, to broaden the applications of focused electron/ion beam induced processing.

This Special Issue aims to provide an in-depth overview on the current status of nanofabrication with focused electron/ion beam induced processing though research papers and review articles. Topics include experimental and theoretical contributions on modification and nanofabrication with FEB and FIB-induced processing.

Some examples of its applications are: 1) the material modification by a focused ion beam, such as the tuning of material properties by irradiation, material removal by milling and sputtering, and material addition by focused electron beam in the three dimensions of space; 2) material modification by a focused electron beam, such as the tuning of material properties by irradiation, material removal by etching, and the material addition by focused electron beam in the three dimensions of space; and 3) theoretical approaches of focused electron/ion beam induced processing.

Dr. Rosa Córdoba
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Related Special Issue

Published Papers (2 papers)

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Research

8 pages, 2530 KiB

Open AccessArticle

FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector

by Wangqiong Xu, Ying Lu, Weibin Lei, Fengrui Sui, Ruru Ma, Ruijuan Qi and Rong Huang

Micromachines 2022, 13(1), 11; https://doi.org/10.3390/mi13010011 - 22 Dec 2021

Cited by 3 | Viewed by 2295

Abstract

Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 10⁴ AW⁻¹ and a high photoconductivity gain of 5.0 × 10⁶%, which shows great promise for further optoelectronic device applications. Full article

(This article belongs to the Special Issue Nanofabrication with Focused Electron/Ion Beam Induced Processing, Volume II)

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Graphical abstract

10 pages, 4128 KiB

Open AccessArticle

Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor

by Qilan Zhong, Yiwei Wang, Yan Cheng, Zhaomeng Gao, Yunzhe Zheng, Tianjiao Xin, Yonghui Zheng, Rong Huang and Hangbing Lyu

Micromachines 2021, 12(12), 1436; https://doi.org/10.3390/mi12121436 - 24 Nov 2021

Cited by 2 | Viewed by 2354

Abstract

Hafnia-based ferroelectric (FE) thin films have received extensive attention in both academia and industry, benefitting from their outstanding scalability and excellent CMOS compatibility. Hafnia-based FE capacitors in particular have the potential to be used in dynamic random-access memory (DRAM) applications. Obtaining fine structure characterization at ultra-high spatial resolution is helpful for device performance optimization. Hence, sample preparation by the focused ion beam (FIB) system is an essential step, especially for in situ biasing experiments in a transmission electron microscope (TEM). In this work, we put forward three tips to improve the success rate of in situ biasing experiments: depositing a carbon protective layer to position the interface, welding the sample on the top of the Cu column of the TEM grid, and cutting the sample into a comb-like shape. By these means, in situ biasing of the FE capacitor was realized in TEM, and electric-field-induced tetragonal (t-) to monoclinic (m-) structure transitions in Hf_0.5Zr_0.5O₂ FE film were observed. The improvement of FIB sample preparation technology can greatly enhance the quality of in situ biasing TEM samples, improve the success rate, and extend from capacitor sample preparation to other types. Full article

(This article belongs to the Special Issue Nanofabrication with Focused Electron/Ion Beam Induced Processing, Volume II)

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