Miniaturized Photodetectors: New Perspectives and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: closed (31 October 2021) | Viewed by 469

Special Issue Editor


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Guest Editor

Special Issue Information

Dear Colleagues,

Modern technologies provide the potentialities for the design of microsystems where photonic and microelectronic functionalities can be combined successfully. In recent years, a variety of passive and active photonic devices have been developed, and among them, photodetectors have attracted a particular amount of interest in the scientific community.

Si photodiodes are typically designed to operate at visible wavelengths, but unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm. In this context the use of germanium (Ge) grown on Si and III-V semiconductors is the most common approach for operations around 1550 nm.

In recent years, significant progress has been achieved both by improving the performance of  photodetectors in all the optical spectrum by using both photovoltaic and thermal effects. In addition, the capability to integrate new emerging 2D materials together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with an unexpected performance from UV to IR. Accordingly, this Special Issue of Micromachines seeks to showcase research papers and review articles that show the most recent advances in the field of photodetectors and their respective applications.

Dr. Maurizio Casalino
Guest Editor

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Keywords

  • photodetector
  • silicon
  • infrared
  • plasmonics
  • germanium
  • 2D materials
  • CMOS
  • imaging
  • spectroscopy

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