Advanced Photodetectors: Materials, Design and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 30 November 2024 | Viewed by 1072

Special Issue Editors


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Guest Editor

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Guest Editor Assistant
Institute of Applied Science and Intelligent Systems “Eduardo Caianiello” (CNR), Via P. Castellino n. 141, 80131 Naples, Italy
Interests: photonics; graphene; photodetectors; solid state devices
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Special Issue Information

Dear Colleagues,

We invite researchers, scientists, and experts in the field of photodetectors to submit their innovative work for consideration in our upcoming Special Issue "Advanced Photodetectors: Materials, Design, and Applications".

This Special Issue aims to provide a platform for showcasing cutting-edge advancements in photodetector technology. We encourage submissions related to:

  1. Materials: Explore novel materials that are revolutionizing photodetection, from traditional semiconductors to emerging nanomaterials and organic compounds. Share your insights into the unique properties and potential applications of these materials.
  2. Design: Present your research on innovative photodetector designs, including plasmonic structures, quantum dot-based architectures, and beyond. Discuss how these designs optimize light absorption, enhance sensitivity, and enable new functionalities.
  3. Applications: Demonstrate the practical relevance of advanced photodetectors in various domains, such as optical communications, imaging, remote sensing, and biomedical applications. Showcase how your work contributes to solving real-world challenges.

By submitting your contributions to this Special Issue, you will join a dynamic community of experts pushing the boundaries of photodetector technology. Your research will help bridge the gap between materials science, design innovation, and practical applications.

Do’ not miss the opportunity to be part of this exciting exploration, share your groundbreaking research, and contribute to the advancement of this vital field. Submit your manuscripts today to be considered for publication in this prestigious Special Issue.

Dr. Maurizio Casalino
Guest Editor

Dr. Teresa Crisci
Guest Editors Assistant

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photodetectors
  • materials science
  • semiconductor devices
  • design
  • sensing technology
  • optoelectronics
  • nanomaterials
  • quantum dots
  • optical communication
  • imaging technologies

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Published Papers (1 paper)

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Research

12 pages, 6219 KiB  
Article
Room-Temperature (RT) Extended Short-Wave Infrared (e-SWIR) Avalanche Photodiode (APD) with a 2.6 µm Cutoff Wavelength
by Michael Benker, Guiru Gu, Alexander Z. Senckowski, Boyang Xiang, Charles H. Dwyer, Robert J. Adams, Yuanchang Xie, Ramaswamy Nagarajan, Yifei Li and Xuejun Lu
Micromachines 2024, 15(8), 941; https://doi.org/10.3390/mi15080941 - 24 Jul 2024
Viewed by 677
Abstract
Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher [...] Read more.
Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of M~190 at a low bias of Vbias= 2.5 V under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of R>140 A/W is also achieved at the low bias of Vbias=2.5 V. This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP). Full article
(This article belongs to the Special Issue Advanced Photodetectors: Materials, Design and Applications)
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