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Progress, Challenges, and Opportunities for Photodetectors
Topic Information
Dear Colleagues,
Photodetectors (PDs) are components of paramount importance in a vast number of applications, including fiber optic communications, environmental sensing, process control, safety and security, defense and so on. Silicon (Si) PDs have been widely developed in the visible spectrum and have revolutionized the market of camcorders and mobile phones. More recently, many emerging all-silicon approaches and devices realized in standard CMOS foundries, without requiring change to the process flow-chart (zero-change CMOS), have shown impressive performance in detecting near-infrared (NIR) wavelengths. However, III-V semiconductors remain probably the best materials for detecting NIR spectra at a high efficiency, and the recent advances in this field have led to a high bandwidth that also makes III-V PDs suitable for THz receivers, which are widely employed for security applications. On the other hand, infrared (IR) thermal detectors, such as thermopile, bolometers, and pyroelectric devices, are important devices whose advances have been guided by both civil and military applications, while Type II strained layer superlattice (SLS) detectors are becoming fundamental components in imaging systems and high-resolution thermal detection. In this context, two-dimensional materials, such as graphene or molybdenum disulphide, are showing their huge potential, and nowadays low-weight, flexible all-2D PDs have shown good performance in a broadband spectrum, including ultraviolet (UV), which is also of great interest for environmental monitoring and biological applications in the context of lab-on-chip systems. In addition, organic materials are playing an increasingly important role in the photodetection field for emerging wearable, energy-harvesting, and health-care applications. Finally, in recent decades, the challenge of detecting single photons has been taken up by the scientific community, and nowadays, quantum computers based on this technology are a reality.
This Topic aims to provide readers with a detailed overview of the current state-of-the-art in the fascinating world of photodetectors. Starting from the well-established technology, the object of this Topic is to present photodetectors based on new structures, physical effects and materials in order to show how this photonic device, born as a simple image sensor, is becoming increasingly attractive in a vast number of applications, ranging from wearable sensing to quantum computers.
In this Topic, original research articles and reviews are welcome. Research areas may include, but are not limited to, the following:
- Infrared detector;
- Type II SLS detector;
- Quantum detector;
- Avalanche photodetector;
- CMOS-compatible photodetector;
- THz detector;
- Thermal detector;
- Detector based on 2D materials;
- Organic detector;
- UV detector.
We look forward to receiving your contributions.
Dr. Maurizio Casalino
Prof. Dr. Ha Sul Kim
Prof. Dr. Yu-Hwa Lo
Topic Editors
Participating Journals
Journal Name | Impact Factor | CiteScore | Launched Year | First Decision (median) | APC |
---|---|---|---|---|---|
Applied Sciences
|
2.5 | 5.3 | 2011 | 17.8 Days | CHF 2400 |
Eng
|
- | 2.1 | 2020 | 28.3 Days | CHF 1200 |
Micromachines
|
3.0 | 5.2 | 2010 | 17.7 Days | CHF 2600 |
Photonics
|
2.1 | 2.6 | 2014 | 14.8 Days | CHF 2400 |
Sensors
|
3.4 | 7.3 | 2001 | 16.8 Days | CHF 2600 |
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