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Micromachines
Special Issues
Emerging Technologies in Wide-Bandgap Semiconductor Devices
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Emerging Technologies in Wide-Bandgap Semiconductor Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (30 September 2022) | Viewed by 6312

Special Issue Editor

Dr. Ming Xiao

E-Mail Website
Guest Editor
Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, USA
Interests: advanced materials; nanotechnology; power electronics; energy systems; wide-bandgap semiconductor

Special Issue Information

Dear Colleagues,

Wide-bandgap semiconductor devices are at the forefront of the next-generation power electronics revolution and are beginning to be widely used in the radio-frequency field. However, the material performance advantages of wide-bandgap semiconductors are still far from being fully reflected in device performance. There are also numerous key technical issues in various aspects of wide-bandgap semiconductors in the process from basic research to commercial applications, including novel device structures, key material epitaxy technologies needed for high-performance devices, device reliability, device robustness, heat dissipation, and device packaging, etc. These emerging technologies in wide-bandgap semiconductor devices have become an important bridge to advance from the fundamentals research of wide-bandgap semiconductors to commercial applications. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on proposing novel device designs, developing novel device material epitaxy techniques, improving device reliability and robustness, novel device thermal and packaging solutions, and all other topics of interest to the theme.

Dr. Ming Xiao
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductor
  • silicon carbide
  • gallium nitride
  • device design
  • material epitaxy
  • reliability and robustness
  • thermal management
  • packaging

Published Papers (2 papers)

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Research

11 pages, 2135 KiB  
Article
Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film
by Mao Ye, Dongbo Wang, Shujie Jiao and Lang Chen
Micromachines 2022, 13(7), 1140; https://doi.org/10.3390/mi13071140 - 19 Jul 2022
Cited by 2 | Viewed by 1415
Abstract
High Mg content (60%) ZnMgO samples with and without Ga dope were grown by an RF magnetron sputtering system. The effect of Ga dope on the ZnMgO sample and the respective ultraviolet photodetectors (UVPD) device’s performance were carefully studied by various experimental methods. [...] Read more.
High Mg content (60%) ZnMgO samples with and without Ga dope were grown by an RF magnetron sputtering system. The effect of Ga dope on the ZnMgO sample and the respective ultraviolet photodetectors (UVPD) device’s performance were carefully studied by various experimental methods. The investigations of the structure and optical properties of the ZnMgO sample established that the Ga doped sample has a better crystal quality and larger band gap (5.54 eV). The current-voltage characteristics indicate that both the photocurrent and dark current were enhanced after Ga dope. Under 12 V bias, the undoped UVPD show two spectral response peaks at 244 nm and 271 nm with a responsivity of 1.9 A/W and 0.38 A/W, respectively. While the Ga doped UVPD showed only one response peak at 241 nm and the deep UV responsibility up to 8.9 A/W;, as the bias increased from 12 V to 60 V, the responsiveness raised to 52 A/W, with a signal to noise ratio (241 nm/700 nm) as high as 105. Combining the results of XRD, PL spectrum and XPS, the enhanced ultraviolet photoresponse of the Ga dope device contributed to improving the crystal quality and “dopant-defect pairing effect” caused by Ga doping, which led to a considerable reduction in the number of ionized impurities in the scatting centers, and enhanced the carrier’s mobility. Our work demonstrates that even a high Mg content ZnMgO can exhibit enhanced UV performance after a Ga dope due to the dopant-defect pairing effect, which confirmed the advantage of the use of ZnMgO in the deep-UV region. Full article
(This article belongs to the Special Issue Emerging Technologies in Wide-Bandgap Semiconductor Devices)
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9 pages, 1663 KiB  
Article
Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
by Bo Yang, Heng Wang, Sheng Peng and Qiang Cao
Micromachines 2022, 13(7), 1011; https://doi.org/10.3390/mi13071011 - 27 Jun 2022
Cited by 9 | Viewed by 4541
Abstract
With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants [...] Read more.
With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and unnecessary thermal damage. In this work, a precision layered stealth dicing (PLSD) method by ultrafast lasers is proposed to separate the semi-insulated 4H-SiC wafer with a thickness of 508 μm. The laser power attenuates linearly from 100% to 62% in a gradient of 2% layer by layer from the bottom to the top of the wafer. A cross section with a roughness of about 1 μm was successfully achieved. We have analyzed the effects of laser pulse energy, pulse width, and crystal orientation of the SiC wafer. The anisotropy of the SiC wafer results in various qualities of PLSD cross sections, with the roughness of the crystal plane {10−10} being 20% lower than that of the crystal plane {11−20}. Full article
(This article belongs to the Special Issue Emerging Technologies in Wide-Bandgap Semiconductor Devices)
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