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Nanomaterials
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Optical Properties of Semiconductor Nanomaterials: 2nd Edition
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Optical Properties of Semiconductor Nanomaterials: 2nd Edition

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 20 February 2025 | Viewed by 5236

Special Issue Editors

Prof. Dr. Ruifeng Lu

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Guest Editor
Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
Interests: ultrafast optical physics; photocatalysis; inorganic lead-free perovskites
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Kun Zhao

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Guest Editor
Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
Interests: ultrafast optical physics; low-dimensional quantum physics; two-dimensional magnets
Dr. Chao Feng

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Guest Editor
Center for Optics Research and Engineering (CORE), Shandong University, Qingdao 266237, China
Interests: ultrafast laser; laser materials; gas sensing
Special Issues, Collections and Topics in MDPI journals
Dr. Ya Bai

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Guest Editor
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Interests: strong field phenmenon; solid high-harmonic generation; topological phase
Dr. Liang Gao

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Guest Editor
Center for Optics Research and Engineering (CORE), Shandong University, Qingdao 266237, China
Interests: quantum cascase lasers; metasurface and metamaterials; nanophotonics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor nanomaterials are promising for next-generation applications in many fields, such as energy harvesting, electronic and optoelectronic devices, chemical and biosensors, and catalysts at the nanoscale. A major feature of semiconductor nanomaterials is that their unique optical properties differ significantly from the bulk material due to their quantum size effect or large surface-to-volume ratio. The optical properties of semiconductor nanomaterials are not only related to their atomic structure and electronic properties, but also strongly correlated with their shape, size, and surface functionality, making them attractive objects of fundamental research and novel potential applications.

We are pleased to invite you to submit a manuscript to this Special Issue, entitled “Optical Properties of Semiconductor Nanomaterials: 2nd Edition”, of Nanomaterials. This Special Issue aims to collect the latest experimental and theoretical research articles on the optical properties of semiconductor nanomaterials and their applications. The scope of this Special Issue addresses the preparation, characterization and application of semiconductor nanomaterials.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following: nanoparticles, quantum dots, the modeling of nanomaterials and mesoscopic effects, ultrafast optics, photocatalysis, plasmonic, perovskites nanomaterials, and low-dimensional materials.

We look forward to receiving your contributions.

Prof. Dr. Ruifeng Lu
Prof. Dr. Kun Zhao
Dr. Chao Feng
Dr. Ya Bai
Dr. Liang Gao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

 

Keywords

  • optical properties
  • semiconductors
  • nanomaterials
  • low-dimensional materials
  • photocatalysis
  • nanoparticles
  • ultrafast optics
  • optical nano-manipulation
  • nano-magnetooptics
  • spectral imaging

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Published Papers (3 papers)

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8 pages, 6135 KiB  
Article
A Watt-Level Pulsed Er:Lu2O3 Laser Based on a TiB2 Saturable Absorber
by Yangyang Liang and Lu Zhang
Nanomaterials 2024, 14(4), 379; https://doi.org/10.3390/nano14040379 - 18 Feb 2024
Viewed by 1073
Abstract
TiB2 nanoparticles with a bandgap of 0 eV were prepared, and the corresponding nonlinear optical response at 2.85 μm was investigated. Employing a TiB2 as a saturable absorber, a 2.85 μm pulsed Er:Lu2O3 crystal laser with an average [...] Read more.
TiB2 nanoparticles with a bandgap of 0 eV were prepared, and the corresponding nonlinear optical response at 2.85 μm was investigated. Employing a TiB2 as a saturable absorber, a 2.85 μm pulsed Er:Lu2O3 crystal laser with an average output power of 1.2 W was achieved under a maximum pump power of 9.51 W. Laser pulses with durations of ~203 ns were delivered at a repetition rate of 154 kHz, which corresponds to a pulse energy of ~7.8 µJ and a peak power of 39.3 W. As far as we know, the result represents the highest average output power from all Q-switched Er:Lu2O3 crystal lasers. Full article
(This article belongs to the Special Issue Optical Properties of Semiconductor Nanomaterials: 2nd Edition)
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13 pages, 6668 KiB  
Article
Spatially Structured Optical Pump for Laser Generation Tuning
by Gabrielius Kontenis, Darius Gailevicius, Victor Taranenko and Kestutis Staliunas
Nanomaterials 2024, 14(1), 49; https://doi.org/10.3390/nano14010049 - 23 Dec 2023
Cited by 1 | Viewed by 1223
Abstract
The goal and essential parameter of laser light conversion is achieving emitted radiation of higher brightness. For many applications, the laser beam must have the highest available beam quality and highest achievable power. However, lasers with higher average power values usually have poorer [...] Read more.
The goal and essential parameter of laser light conversion is achieving emitted radiation of higher brightness. For many applications, the laser beam must have the highest available beam quality and highest achievable power. However, lasers with higher average power values usually have poorer beam quality, limiting the achievable brightness. Here, we present a method for improving the beam quality by using a spatially structured optical pump for a membrane external cavity laser resonator. An increase in brightness is achieved under fixed focusing conditions just by changing the pump intensity profile. A controllable output laser mode can be achieved by using a dynamically changing pump pattern. Full article
(This article belongs to the Special Issue Optical Properties of Semiconductor Nanomaterials: 2nd Edition)
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10 pages, 2215 KiB  
Article
Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
by Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Sáenz de Santa María Modroño, Danxuan Chen, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté and Nicolas Grandjean
Nanomaterials 2023, 13(18), 2569; https://doi.org/10.3390/nano13182569 - 16 Sep 2023
Cited by 3 | Viewed by 2321
Abstract
In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect density, we show that QW emission [...] Read more.
In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect density, we show that QW emission efficiency significantly increases upon the insertion of an In-containing underlayer, whose role is to prevent the introduction of point defects during the growth of InGaN QWs. Hence, we demonstrate that point defects play a key role in limiting InGaN QW efficiency, even in samples where their density (2–3 × 109 cm−2) is much lower than that of TD (2–3 × 1010 cm−2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of point defects over TDs in QW efficiency. Interestingly, TD terminations lead to the formation of independent domains for carriers, thanks to V-pits and step bunching phenomena. Full article
(This article belongs to the Special Issue Optical Properties of Semiconductor Nanomaterials: 2nd Edition)
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