83 Results Found

Indium phosphide (InP) semiconductor technology is being explored for radiofrequency (RF) applications, targeting frequencies exceeding 100 GHz, to support the next generation of 6G communication systems. When taking into account sustainability in de...

The fast-maturing photonic integration technology is calling for a versatile platform that supports both active and passive functions as well as high scalability through component miniaturization. Indium phosphide (InP) has long been recognized for i...

Indium phosphide (InP) is an excellent material used in space electronic devices due to its direct band gap, high electron mobility, and high radiation resistance. Displacement damage in InP, such as vacancies, interstitials, and clusters, induced by...

Indium phosphide (InP) is widely utilized in the fields of electronics and photovoltaics due to its high electron mobility and high photoelectric conversion efficiency. Strain engineering has been extensively employed in semiconductor devices to adju...

Quantum dots (QDs) are promising semiconductor nanocrystals in photocatalysis due to their unique properties and in contrast to bulk semiconductors. Different from the traditional modification methods of indium phosphide (InP) QDs such as metal dopin...

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and...

This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal genera...

This paper presents a novel periodic grounded coplanar waveguide (GCPW) leaky-wave antenna implemented in an Indium Phosphide (InP) process. The antenna is designed to operate in the 220 GHz–325 GHz frequency range, with the goal of integrating...

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is fo...

Acinetobacter baumannii is a remarkable microorganism known for its diversity of habitat and its multi-drug resistance, resulting in hard-to-treat infections. Thus, a sensitive method for the identification and detection of Acinetobacter baumannii is...

The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of th...

Indium phosphide (InP) is a promising photoactive material for solar-driven hydrogen production owing to its optimal bandgap, high carrier mobility, and broad solar absorption. However, conventional InP fabrication relies on costly wafers and toxic p...

Classical modeling of structural phenomena occurring in InP crystal, for example plastic deformation caused by contact force, requires an interatomic interaction potential that correctly describes not only the elastic properties of indium phosphide b...

We present a fully integrated optical ammonia sensor, based on a photonic integrated circuit (PIC) with a tunable laser source and a hollow-core fiber (HCF) as gas interaction cell. The PIC also contains a photodetector that can be used to record the...

Indium phosphide (InP) colloidal quantum dots (CQDs) have generated great interest as next-generation light-emitting materials owing to their narrow emission spectra and environment-friendly components. The minimized surface defects is essential to a...

To be of commercial interest, gas sensors must optimise, among others, sensitivity, selectivity, longevity, cost and measurement speed. Using the example of ammonia, we establish that integrated optical sensors provide means to maintain the benefits...

Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to...

In this article, a method for indium phosphide (InP) electro-optic modulator (EOM) optimization is introduced. The method can be used for the design and analysis of an EOM based on the Mach-Zehnder interferometer (MZI) design. This design is based on...

The optical properties of indium phosphide (InP) quantum dots (QDs) are significantly influenced by their surface native oxides, which are generally removed by treating InP cores with hydrofluoric acid (HF). Besides the harmful health effects of HF,...

This paper describes a fabrication process for realizing Indium-Phosphide-based photonic-integrated circuits (PICs) with a high level of integration to target a wide variety of optical applications. To show the diversity in PICs achievable with our o...

In this paper, we studied the optimized conditions for adding inorganic quantum dots (QD) to the P3HT:PC₇₀BM organic active layer to increase the sensitivity of the indirect X-ray detector. Commonly used QDs are composed of hazardous substances with...

New requirements for high-frequency applications in wireless communication and sensor technologies need III-V compound semiconductors such as indium phosphide (InP) to complement silicon (Si)-based technologies. This study establishes the basis for a...

InP QDs have shown a great potential as cadmium-free QDs alternatives in biomedical applications. It is essential to understand the biological fate and toxicity of InP QDs. In this study, we investigated the in vivo renal toxicity of InP/ZnS QDs term...

The primary focus of our research was to obtain global gene expression data in baker’s yeast exposed to sub-lethal doses of quantum dots (QDs), such as green-emitting CdSe/ZnS and InP/ZnS, to reveal novel insights on their unique mechanisms of toxici...

Strong piezoresistivity of InAsP nanowires is rationalized with atomistic simulations coupled to Density Functional Theory. With a focal interest in the case of the As(75%)-P(25%) alloy, the role of crystal phases and phosphorus atoms in strain-drive...

An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targ...

Ammonium sulfide ((NH₄)₂S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing...

Density-functional theory calculations on P-rich InP(001):H surfaces are presented. Depending on temperature, pressure and substrate doping, hydrogen desorption or adsorption will occur and influence the surface electronic properties. For p-doped sam...

In this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and t...

We report on a novel InP-based 1.55 μm waveguide triple transit region photodiode (TTR-PD) structure for hybrid integration with passive optical silica waveguides. Using the beam propagation method, numerical analyses reveal that, for evanescent opti...

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain st...

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combin...

Environmentally friendly quantum dots (QDs) of InP-based materials are widely investigated, but their reliability remains inadequate to realize their full potential and wide application. In this study, InP/ZnSeS/ZnS QDs (pristine QDs) were dispersed...

Externally modulated DFB lasers (EML) and vertically illuminated photodetectors are presented. Because of their excellent high-speed behavior and operation wavelength of 1310 nm, the devices are of interest for intra-data center communication. Since...

Surface passivation is a critical aspect of preventing surface oxidation and improving the emission properties of nanocrystal quantum dots (QDs). Recent studies have demonstrated the critical role of surface ligands in determining the performance of...

This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of In_0.53P_0.47 core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; V_In⁻) within the bulk...

Integrated optics is a field of study and technology that focuses on the design, fabrication, and application of optical devices and systems using integrated circuit technology. It involves the integration of various optical components, such as waveg...

In this work, we present a wideband on-wafer characterization technique for InAlAs/InGaAs/InAs InP-based high-electron mobility transistors (HEMTs) using an optimized multiline Thru-Reflect-Line (mTRL) calibration kit. Our goal is to directly extract...

After a large-scale investigation into carbon nanotubes, significant research efforts have been devoted to discovering and synthesizing other nanotubes formed by chemical elements other than carbon. Among them, non-carbon nanotubes based on compounds...

In this study, we propose a multi-color detector using a simple plasmonic metamaterial structure consisting of a silver and a indium phosphide. The color detector is composed of a metal strip with a periodicity in the x-axis direction on a layer of t...

We demonstrate that selective electrochemical etching is a reliable method for detecting and observing the uneven concentration distribution of impurities in indium phosphide crystals, which accompanies the growth of highly doped crystals using the C...

The epitaxial deposition of a precise number, or even fractions, of monolayers of indium (In)-rich semiconductors onto gallium arsenide (GaAs) substrates enables the creation of quantum dots based on InAs, InGaAs and indium phosphide (InP) for infrar...

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick g...

To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molec...

In this work, we discuss the idea and practical implementation of an integrated photonic circuit-based interrogator of fiber Bragg grating (FBG) sensors dedicated to monitoring the condition of the patients exposed to Magnetic Resonance Imaging (MRI)...

The efficiency of micro-light-emitting diodes ($\mu$-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indi...

We present a theoretical proposal for an integrated four-wave mixing source of narrow-band path-entangled photon pairs with efficient spatial pump self-rejection. The scheme is based on correlated loss in a system of waveguides in Kerr nonlinear medi...

In this study, a traveling wave Mach-Zehnder intensity modulator (TW-MZM) was designed and optimized for six different electro-optical (EO) crystals: lithium niobate (LNB), potassium niobate (KNB), lithium titanate (LTO), beta barium borate (BBO), ca...

The aim of this paper is the determination of a concentrating thermo-photovoltaic (CPV/T) system dynamic model by means of the finite element method (FEM). The system consist of triple-junction InGaP/InGaAs/Ge (indium-gallium phosphide/indium-galliu...

At a 1550 nm wavelength, the optical sensitivity of conventional indium gallium arsenide (InGaAs)-based avalanche photodiodes (APDs) is restricted by their high excess noise, hindering their performance in long-range free-space optical communication...