Search Results (81)

Indium phosphide (InP) is a promising photoactive material for solar-driven hydrogen production owing to its optimal bandgap, high carrier mobility, and broad solar absorption. However, conventional InP fabrication relies on costly wafers and toxic precursors, limiting its scalability and sustainability. Here, we demonstrate a simple and environmentally friendly route to synthesize n-type InP thin-film photoanodes by phosphidating indium films prepared via doctor blade coating on ITO substrates, using NaH₂PO₂ as a phosphorus source. Structural and spectroscopic analyses (XRD, Raman, XPS, PL) confirmed the successful formation of crystalline InP with optimum quality at 425 °C. Photoelectrochemical measurements revealed a significant photocurrent density of 1.8 mA·cm⁻² under AM 1.5 illumination, with extended photoresponse into the near-infrared region. Mott–Schottky and EIS analyses indicated efficient charge separation, low transfer resistance, and unintentional n-type doping due to Sn diffusion from the ITO substrate. This facile and green synthesis route not only provides a scalable approach to III–V semiconductors but also highlights InP thin films as cost-effective and efficient photoanodes for sustainable solar hydrogen generation. Full article

Reliable power generation from solar cells is critical for spacecraft operation. High-energy laser irradiation poses a significant threat, as it can potentially cause irreversible damage to solar cells, which is difficult to detect remotely using conventional techniques such as radar or optical imaging. Spectral detection offers a potential approach through unique “spectral fingerprints,” but the spectral characteristics of laser-damaged solar cells remain insufficiently documented. This study investigates the scattering spectral characteristics of triple-junction GaAs (Gallium Arsenide) solar cells subjected to nanosecond pulsed laser irradiation to establish spectral signatures for damage assessment. GaAs solar cells were irradiated at varying energy densities. Bidirectional Reflectance Distribution Function (BRDF) spectra (400–1200 nm) were measured. A thin-film interference model was used to simulate damage effects by varying layer thicknesses, thereby interpreting experimental results. The results demonstrate that as the laser energy density increases from 0.12 to 2.96 J/cm², the number of absorption peaks in the visible range (400–750 nm) decreases from three to zero, and the oscillation in the near-infrared range vanishes completely, indicating progressive damage to the GaInP (Gallium Indium Phosphide) and GaAs layers. This study provides a spectral-based approach for remote assessment of laser-induced damage to solar cells, which is crucial for satellite health monitoring. Full article

We demonstrate that selective electrochemical etching is a reliable method for detecting and observing the uneven concentration distribution of impurities in indium phosphide crystals, which accompanies the growth of highly doped crystals using the Czochralski method. Even though selective electrochemical etching, as a method of detecting defects in the crystal lattice, has been discussed many times in the literature, it has not yet been described for indium phosphide. In this work, we investigated etching in compositions of various selective electrolytes for InP of n- and p-type conductivity with different surface orientations. We present in detail the features of detecting the striped inhomogeneity of impurity distribution. The mechanisms and peculiarities of the formation of oxide crystallites on the surface of InP during electrochemical processing are presented, including structures like flower-like and parquet crystallites. The formation of porous surfaces, terraces, tracks, and crystallites is explained from the perspective of the defect-dislocation mechanism. Full article

In this work, we present a wideband on-wafer characterization technique for InAlAs/InGaAs/InAs InP-based high-electron mobility transistors (HEMTs) using an optimized multiline Thru-Reflect-Line (mTRL) calibration kit. Our goal is to directly extract transition frequency f_T and maximum frequency of oscillation f_max values from S-parameters measurements with frequencies up to 1.1 THz and overcome the limitations of the traditional 20 dB/dec extrapolation method using lower-frequency band measurements. Indeed, as the state-of-the-art transistors now exhibit cutoff frequencies exceeding 1 THz, standard low-frequency extrapolation methods become increasingly inaccurate. Full-wave electromagnetic simulations were used to design low-loss coplanar waveguide (CPW) access structures with stable impedance and minimal parasitic effects. These structures were co-fabricated with HEMTs and calibration standards on the same InP substrate. The 2-finger transistor with a 80 nm gate length exhibits a directly measured f_T = 320 GHz and f_max = 800 GHz. The technique showed high consistency across six frequency bands and confirms that direct broadband measurement with mTRL improves accuracy. This work highlights the metrological strength of mTRL-based setups for next-generation THz device characterization. Full article

A hierarchical photoanode composed of amorphous indium phosphate (InPO_x)-coated titanium dioxide nanowires (TiO₂ NWs) was successfully fabricated via a hydrothermal method followed by dip-coating and thermal phosphidation. Structural characterization revealed the formation of a uniform InPO_x shell on the surface of vertically aligned TiO₂ NWs, without altering their 1D morphology. X-ray photoelectron spectroscopy confirmed the incorporation of phosphate species and the presence of oxygen vacancies, which contribute to enhanced interfacial charge dynamics. Photoelectrochemical (PEC) measurements demonstrated that the InPO_x/TiO₂ NWs significantly improved photocurrent density, with the 0.1 M InCl₃-derived sample achieving 0.36 mA·cm⁻² at 1.0 V—an enhancement of approximately 928% over pristine TiO₂. This enhancement is attributed to improved charge separation and injection efficiency (91%), as well as reduced interfacial resistance verified by electrochemical impedance spectroscopy. Moreover, the Mott–Schottky analysis indicated a four-order increase in carrier density due to the InPO_x shell. The modified electrode also exhibited superior stability under continuous illumination for 3 h. These findings highlight the potential of amorphous InPO_x as an effective cocatalyst for constructing efficient and durable TiO₂-based photoanodes for solar-driven water-splitting applications. Full article

The fast-maturing photonic integration technology is calling for a versatile platform that supports both active and passive functions as well as high scalability through component miniaturization. Indium phosphide (InP) has long been recognized for its ability to deliver a comprehensive suite of photonic components. InP membrane technology has emerged as a next-generation solution that could unite the functional completeness with high scalability. This paper describes recent advancements in the InP-membrane-on-Si (IMOS) platform, which supports high-performance passives, polarization and mode handling, native light sources, amplifiers, modulators and detectors, and novel material integration. Full article

Recent advancements in hybrid photonic integrated circuits (PICs) for wireless communications are reviewed, with a focus on innovations developed at Fraunhofer HHI. This work leverages hybrid integration technology, which combines indium phosphide (InP) active elements, silicon nitride (Si₃N₄) low-loss waveguides, and high-efficient thermal-optical tunable polymers with micro-optical functions to achieve fully integrated wireless transceivers. Key contributions include (1) On-chip optical injection locking for generating phase-locked optical beat notes at 45 GHz, enabled by cascaded InP phase modulators and hybrid InP/polymer tunable lasers with a 3.8 GHz locking range. (2) Waveguide-integrated THz emitters and receivers, featuring photoconductive antennas (PCAs) with a 22× improved photoresponse compared to top-illuminated designs, alongside scalable 1 × 4 PIN-PD and PCA arrays for enhanced power and directivity. (3) Beam steering at 300 GHz using a polymer-based optical phased array (OPA) integrated with an InP antenna array, achieving continuous steering across 20° and a 10.6 dB increase in output power. (4) Demonstration of fully integrated hybrid wireless transceiver PICs combining InP, Si₃N₄, and polymer material platforms, validated through key component characterization, on-chip optical frequency comb generation, and coherent beat note generation at 45 GHz. These advancements result in compact form factors, reduced power consumption, and enhanced scalability, positioning PICs as an enabling technology for future high-speed wireless networks. Full article

In this paper, we present recent advancements in transmitter and receiver technologies for Optical Wireless Communication (OWC). OWC offers very wide license-free optical spectrum which enables very high capacity transmission. Additionally, beam-steered OWC is more power-efficient and more secure due to low divergence of light. One of the main challenges of OWC is wide angle transmission and reception because law of conservation of etendue restricts maximization of both aperture and field of view (FoV). On the transmitter side, we use Micro Electro-Mechanical System cantilevers activated by piezoelectric actuators together with silicon micro-lenses for narrow laser beam steering. Such design allowed us to experimentally demonstrate at least 10 Gbps transmission over 100° full angle FoV. On the receiver side, we show the use of photodiode array, and Indium-Phosphide Membrane on Silicon (IMOS) Photonic Integrated Circuit (PIC) with surface grating coupler (SGC) and array of SGC. We demonstrate FoV greater than 32° and 16 Gbps reception with photodiode array. PIC receiver allowed to receive 100 Gbps WDM with single SGC, and 10 Gbps with an array of SGC which had 8° FoV in the vertical angle and full FoV in the horizontal angle. Our results suggest that solutions presented here are scalable in throughputs and can be adopted for future indoor high-capacity OWC systems. Full article

Indium phosphide (InP) semiconductor technology is being explored for radiofrequency (RF) applications, targeting frequencies exceeding 100 GHz, to support the next generation of 6G communication systems. When taking into account sustainability in designing this future generation, growing concerns are emerging regarding the environmental impact of communication networks and the reliance on raw materials for the production of Information and Communication Technologies (ICTs). The extraction, processing, and manufacturing of such materials and semiconductor technologies result in environmental impacts, but these impacts remain insufficiently documented. Firstly, this study evaluates the environmental impacts of manufacturing indium phosphide (InP) wafers based on industrial data and those of InP-based heterojunction bipolar transistors (HBTs) based on early-stage research data. Secondly, this study attempts to highlight the challenges posed by the increasing demand for high-tech solutions, involving raw materials, by evaluating the potential demand for indium for RF 6G applications, with a deployment scenario. Full article

Radiation impacts on space-based systems operating on various orbits are evaluated in this paper. Specifically, satellite operations in Low Earth Orbit (LEO), Medium Earth Orbit (MEO), and Geosynchronous Orbit (GEO) are analyzed. Special focus is given on quantifying the effect of high-energy particle space radiation on materials used for critical power components, where component fault can lead to total mission failure. Methods, using multiple computational platforms for the quantification of non-ionizing energy loss (NIEL) and displacement damage dose (DDD), are used to assess semiconductor damage at specific orbital altitudes. Detailed simulations were conducted for Gallium Arsenide Indium Phosphide (GaInP/GaAs/Ge) solar cells with various cover glass thicknesses, and the survivability of GaInP/GaAs/Ge cells was compared with that of Si cells. It was assessed that radiation exposure due to high-energy protons at 10,000 km is more prevalent than 20,000 km orbits and that electron bombardment is a major electronic damage culprit. For MEO at 10,000 km, MEO at 20,000 km, and GEO at 36,000 km, we determined the 1-year maximum power (Pmax) losses due to protons to be 23%, 8%, and 1% and losses due to electrons to be 11%, 14%, and 10%. Total integrated spectra Pmax losses for those altitudes are 25%, 16%, and 10%, respectively. Full article

Abstract: Quantum dot–polymer composites have the advantages of high luminescent quantum yield (PLQY), narrow emission half-peak full width (FWHM), and tunable emission spectra, and have broad application prospects in display and lighting fields. Research on quantum dots embedded in polymer films and plates has made great progress in both synthesis technology and optical properties. However, due to the shortcomings of quantum dots, such as cadmium selenide (CdSe), indium phosphide (InP), lead halide perovskite (LHP), poor water, oxygen, and light stability, and incapacity for large-scale synthesis, their practical application is still restricted. Various polymers, such as methyl methacrylate (PMMA), polyethylene terephthalate (PET), polystyrene (PS), polyvinylidene fluoride (PVDF), polypropylene (PP), etc., are widely used in packaging quantum dot materials because of their high plasticity, simple curing, high chemical stability, and good compatibility with quantum dot materials. This paper focuses on the application and development of quantum dot–polymer materials in the field of backlight displays, summarizes and expounds the synthesis strategies, advantages, and disadvantages of different quantum dot–polymer materials, provides inspiration for the optimization of quantum dot–polymer materials, and promotes their application in the field of wide-color-gamut backlight display. Full article

Indium phosphide (InP) is widely utilized in the fields of electronics and photovoltaics due to its high electron mobility and high photoelectric conversion efficiency. Strain engineering has been extensively employed in semiconductor devices to adjust physical properties and enhance material performance. In the present work, the band structure and electronic effective mass of InP under different strains are investigated by ab initio calculations. The results show that InP consistently exhibits a direct bandgap under different strains. Both uniaxial strain and biaxial tensile strain exhibit linear effects on the change in bandgap values. However, the bandgap of InP is significantly influenced by uniaxial compressive strain and biaxial tensile strain, respectively. The study of the InP bandgap under different hydrostatic pressures reveals that InP becomes metallic when the pressure is less than −7 GPa. Furthermore, strain also leads to changes in effective mass and the anisotropy of electron mobility. The studies of electronic properties under different strain types are of great significance for broadening the application of InP devices. Full article

Indium phosphide (InP) is an excellent material used in space electronic devices due to its direct band gap, high electron mobility, and high radiation resistance. Displacement damage in InP, such as vacancies, interstitials, and clusters, induced by cosmic particles can lead to the serious degradation of InP devices. In this work, the analytical bond order potential of InP is modified with the short-range repulsive potential, and the hybrid potential is verified for its reliability to simulate the atomic cascade collisions. By using molecular dynamics simulations with the modified potential, the primary damage defects evolution of InP caused by 1–10 keV primary knock-on atoms (PKAs) are studied. The effects of electronic energy loss are also considered in our research. The results show that the addition of electronic stopping loss reduces the number of point defects and weakens the damage regions. The reduction rates of point defects caused by electronic energy loss at the stable state are 32.2% and 27.4% for 10 keV In-PKA and P-PKA, respectively. In addition, the effects of electronic energy loss can lead to an extreme decline in the number of medium clusters, cause large clusters to vanish, and make the small clusters dominant damage products in InP. These findings are helpful to explain the radiation-induced damage mechanism of InP and expand the application of InP devices. Full article

This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of In_0.53P_0.47 core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; V_In⁻) within the bulk of the core QD and inhibit the formation of InPO_x at the core QD–Zn_0.6Se_0.4 shell interfaces. The photoluminescence quantum yield (PLQY) of ~97% and full width at half maximum (FWHM) of ~40 nm were achieved for In_0.53P_0.47/Zn_0.6Se_0.4/Zn_0.6Se_0.1S_0.3/Zn_0.5S_0.5 core/multi-shell QDs emitting red light, which is essential for a quantum-dot organic light-emitting diode (QD-OLED) without red, green, and blue crosstalk. KI doping eliminated V_In⁻ in the core QD bulk by forming K⁺-V_In⁻ substitutes and effectively inhibited the formation of InPO₄(H₂O)₂ at the core QD–Zn_0.6Se_0.4 shell interface through the passivation of phosphorus (P)-dangling bonds by P-I bonds. The elimination of vacancies in the core QD bulk was evidenced by the decreased relative intensity of non-radiative unpaired electrons, measured by electron spin resonance (ESR). Additionally, the inhibition of InPO₄(H₂O)₂ formation at the core QD and shell interface was confirmed by the absence of the {210} X-ray diffraction (XRD) peak intensity for the core/multi-shell QDs. By finely tuning the doping concentration, the optimal level was achieved, ensuring maximum K-V_In⁻ substitution, minimal K⁺ and I⁻ interstitials, and maximum P-dangling bond passivation. This resulted in the smallest core QD diameter distribution and maximized optical properties. Consequently, the maximum PLQY (~97%) and minimum FWHM (~40 nm) were observed at 3% KI doping. Furthermore, the color gamut of a QD-OLED display using R-, G-, and B-QD functional color filters (i.e., ~131.1%@NTSC and ~98.2@Rec.2020) provided a nearly perfect color representation, where red-light-emitting KI-doped QDs were applied. Full article

In this study, a traveling wave Mach-Zehnder intensity modulator (TW-MZM) was designed and optimized for six different electro-optical (EO) crystals: lithium niobate (LNB), potassium niobate (KNB), lithium titanate (LTO), beta barium borate (BBO), cadmium telluride (CdTe), and indium phosphide (InP). The performance of each EO crystal, including optical and radio frequency (RF) loss, applied voltage, and modulation bandwidth, was estimated and compared. The results suggest that, in theory, KNB, LTO, BBO, and CdTe have the potential to outperform LNB. However, it should be noted that the loss associated with KNB and LTO is comparable to that of LNB. The findings demonstrated that BBO and CdTe exhibit a modulation bandwidth exceeding 100 GHz and demonstrate the lowest loss among the considered crystals based on the assumed geometry. Full article