Search Results (11)

Memristive elements, known as memristors, memcapacitors and meminductors, have become an important topic of research in the electronics world in recent years. As there is still no efficient way to manufacture two-terminal memristive elements, many researchers have focused their efforts on designing emulator circuits that mimic these devices. In this study, a memcapacitor emulator circuit using Current Derivative Buffered Amplifier (CDBA) is proposed, which has significant advantages such as wide dynamic range, differential structure at the input port, high sloping rate and wide bandwidth. The main advantages of the emulator are that it is floating without grounding constraint, it is electronically adjustable, it has charge-controlled incremental and decremental modes and it has a simpler circuit structure since it does not contain a memristor. To ensure the integrity of the circuit theory, the results of the mathematical model and the simulation of the memcapacitor are given together. In addition, the characteristics of the experimentally investigated memcapacitor emulator are in good agreement with the simulation results. To provide an illustration of the performance of the proposed emulator, firstly the second-order active low-pass filter circuit and subsequently the amoeba learning circuit are selected as the working environment. The results show that the filtering performance of the proposed emulator at a value after the cut-off frequency in the filter circuit is $25\%$ more efficient than a standard capacitor and in terms of power consumption, it consumes $27.93\%$ less power than a standard capacitor. Moreover, the emulator successfully accomplishes the learning and data storage tasks in the amoeba learning circuit. Full article

This paper addresses critical gaps in the digital implementations of fractional-order memelement emulators, particularly given the challenges associated with the development of solid-state devices using nanomaterials. Despite the potentials of these devices for industrial applications, the digital implementation of fractional-order models has received limited attention. This research contributes to bridging this knowledge gap by presenting the FPGA realization of the memelements based on a universal voltage-controlled circuit topology. The digital emulators successfully exhibit the pinched hysteresis behaviors of memristors, memcapacitors, and meminductors, showing the retention of historical states of their constitutive electronic variables. Additionally, we analyze the impact of the fractional-order parameters and excitation frequencies on the behaviors of the memelements. The design methodology involves using Xilinx System Generator for DSP blocks to lay out the architectures of the emulators, with synthesis and gate-level implementation performed on the Xilinx Artix-7 AC701 Evaluation kit, where resource utilization on hardware accounts for about $1\%$ of available hardware resources. Further hardware analysis shows successful timing validation and low power consumption across all designs, with an average on-chip power of 0.23 Watts and average worst negative slack of 0.6 ns against a 5 ns constraint. We validate these results with Matlab 2020b simulations, which aligns with the hardware models. Full article

We found that a second-order ideal memristor [whose state is the charge, i.e., $\mathit{x}=q$ in $\mathit{v}=\mathit{R}\left(\mathit{x},\mathit{i},\mathit{t}\right)\mathit{i}$] degenerates into a negative nonlinear resistor with an internal power source. After extending analytically and geographically the above local activity (experimentally verified by the two active higher-integral-order memristors extracted from the famous Hodgkin–Huxley circuit) to other higher-order circuit elements, we concluded that all higher-order passive memory circuit elements do not exist in nature and that the periodic table of the two-terminal passive ideal circuit elements can be dramatically reduced to a reduced table comprising only six passive elements: a resistor, inductor, capacitor, memristor, mem-inductor, and mem-capacitor. Such a bounded table answered an open question asked by Chua 40 years ago: Are there an infinite number of passive circuit elements in the world? Full article

Chaotic signals generated by chaotic oscillators based on memory elements are suitable for use in the field of confidential communications because of their very good randomness. But often their maximum Lyapunov exponent is not high enough, so the degree of randomness is not enough. It can be chaos enhanced by transforming it to fractional order using the Caputo differential definition. In this paper, based on the proposed hyperchaotic oscillator, it is extended to a fractional-order form to obtain a chaos-enhanced fractional-order memcapacitor meminductor system, in which several different styles of chaotic and hyperchaotic attractors are found. The dynamical behaviour of the system is studied using bifurcation diagrams, Lyapunov exponent spectrums and Lyapunov dimensions. The multistability of the system is explored in different initial orbits, and the spectral entropy complexity of this system is examined. Finally, a hardware implementation of the memcapacitor meminductor system is given, which demonstrates the effectiveness of the system. This study provides a reference for the study of chaos-enhanced. Full article

Resistors with memory (memristors), inductors with memory (meminductors) and capacitors with memory (memcapacitors) play different roles in novel computing architectures. We found that a coil with a magnetic core is an inductor with memory (meminductor) in terms of its inductance L(q) being a function of charge q. The history of the current passing through the coil is remembered by the magnetization inside the magnetic core. Such a meminductor can play a unique role (that cannot be played by a memristor) in neuromorphic computing, deep learning and brain-inspired computers since the time constant (${\mathit{t}}_{\mathbf{0}}=\sqrt{\mathit{L}\mathit{C}}$) of a neuromorphic RLC circuit is jointly determined by the inductance $L$ and capacitance $C$, rather than the resistance $R$. As an experimental verification, this newly invented meminductor was used to reproduce the observed biological behavior of amoebae (the memorizing, timing and anticipating mechanisms). In conclusion, a beyond-memristor computing paradigm is theoretically sensible and experimentally practical. Full article

In this paper, a chaotic circuit based on a memcapacitor and meminductor is constructed, and its dynamic equation is obtained. Then, the mathematical model is obtained by normalization, and the system is decomposed and summed by an Adomian decomposition method (ADM) algorithm. So as to study the dynamic behavior in detail, not only the equilibrium stability of the system is analyzed, but also the dynamic characteristics are analyzed by means of a Bifurcation diagram and Lyapunov exponents (Les). By analyzing the dynamic behavior of the system, some special phenomena, such as the coexistence of attractor and state transition, are found in the system. In the end, the circuit implementation of the system is implemented on a Digital Signal Processing (DSP) platform. According to the numerical simulation results of the system, it is found that the system has abundant dynamical characteristics. Full article

State-dependent resistors, capacitors, and inductors are a common part of many smart engineering solutions, e.g., in MEMS (Micro-Electro-Mechanical Systems) sensors and actuators, Micro/NanoMachines, or biomimetic systems. These memory elements are today modeled as generic and extended memristors (MR), memcapacitors (MC), and meminductors (ML), which are more general versions of classical MR, MC, and ML from the infinite set of the fundamental elements of electrical engineering, known as Higher-Order Elements (HOEs). It turns out that models of many complex phenomena in MEMS cannot be constructed only from classical and state-dependent elements such as R, L, and C, but that other HOEs with generalized behavior should also be used. Thus, in this paper, generic and extended versions of HOEs are introduced, overcoming the existing limitation to MR, MC, and ML elements. The relevant circuit theorems are formulated, which generalize the well-known theorems of classical memory elements, and their application to model complex processes of various physical natures in MEMS is shown. Full article

Scaling fractional-order memristor circuit is important for realizing a fractional-order memristor. However, the effective operating-frequency range, operation order, and fractional-order memristance of the scaling fractional-order memristor circuit have not been studied thoroughly; that is, the fractional-order memristance in the effective operating-frequency range has not been calculated quantitatively. The fractional-order memristance is a similar and equally important concept as memristance, memcapacitance, and meminductance. In this paper, the frequency-domain characteristic-analysis principle of the fractional-order memristor is proposed based on the order- and F-frequency characteristic functions. The reasons for selecting the order- and F-frequency characteristic functions are explained. Subsequently, the correctness of the frequency-domain characteristic analysis using the order- and F-frequency characteristic functions is verified from multiple perspectives. Finally, the principle of the frequency-domain characteristic analysis is applied to the recently realized chain-scaling fractional-order memristor circuit. The results of this study indicate that the principle of the frequency-domain characteristic analysis of the fractional-order memristor can successfully calculate the fractional-order memristance of the chain-scaling fractional-order memristor circuit. The proposed principle of frequency-domain characteristic analysis can also be applied to mem-elements, such as memristors, memcapacitors, and meminductors. The main contribution of this study is the principle of the frequency-domain characteristic analysis of the fractional-order memristor based on the order- and F-frequency characteristic functions. Full article

This paper deals with the new oscillator structures that contain new elements, so-called memory elements, known as memristor, meminductor, and memcapacitor. Such circuits can exhibit oscillations as well as chaotic behavior. New mathematical models of fractional-order elements and whole oscillator circuits are proposed as well. An illustrative example to demonstrate the oscillations and the chaotic behavior through the numerical solution of the fractional-order circuit model is provided. Full article

In 1971, Prof. L. Chua theoretically introduced a new circuit element, which exhibited a different behavior from that displayed by any of the three known passive elements: the resistor, the capacitor or the inductor. This element was called memristor, since its behavior corresponded to a resistor with memory. Four decades later, the concept of mem-elements was extended to the other two circuit elements by the definition of the constitutive equations of both memcapacitors and meminductors. Since then, the non-linear and non-volatile properties of these devices have attracted the interest of many researches trying to develop a wide range of applications. However, the lack of solid-state implementations of memcapacitors and meminductors make it necessary to rely on circuit emulators for the use and investigation of these elements in practical implementations. On this basis, this review gathers the current main alternatives presented in the literature for the emulation of both memcapacitors and meminductors. Different circuit emulators have been thoroughly analyzed and compared in detail, providing a wide range of approaches that could be considered for the implementation of these devices in future designs. Full article

In this work, we presented the design and simulation of a new flux-controlled meminductor emulator based on a modified version of the well-known Antoniou’s inductor simulator circuit. The constitutive theoretical equations of meminductance are presented and subsequently correlated with the electrical behavior of Antoniou’s circuit, hence illustrating its practical meminductive behavior with a proper selection of feedback impedances. After that, the feasibility of a practical implementation using off-the-shelf devices is illustrated firstly for a two-state meminductor and secondly for a continuous-state meminductor by means of SPICE simulations. It was also demonstrated that this emulator can operate at different frequencies and input signals constituting one of the simplest and most versatile meminductor emulators to date. Full article