Search Results (99)

Amorphous gallium oxide thin-film transistor photodetectors are promising for ultraviolet detection because of their wide bandgap and low dark current. Magnetron sputtering is compatible with low-temperature processing, but device performance is sensitive to sputtering conditions. Poor parameter choices can introduce oxygen vacancies and interface charges, degrading optoelectronic performance. Here, a three-factor, three-level orthogonal design is used to vary sputtering power, Ar/O₂ flow ratio, and film thickness. Nine device sets are fabricated and compared based on transfer characteristics and transient photocurrent–time (I-t) responses measured at a wavelength of 254 nm, with clear differences observed among process combinations. To identify the origin of these differences, representative samples with significant responsivity variations were modeled using TCAD. By fitting the simulated I-t curves to measured transients, the interface fixed charge density and defect-state densities were extracted, and the photon absorption distribution of different samples was analyzed. This analysis, from both defect and UV absorption perspectives, revealed the reasons for the differences in responsivity. The absorption coefficients at 254 nm measured by ellipsometry for the two samples were also compared, and the absorption trends observed in both the simulation and ellipsometry were consistent, confirming the accuracy of the simulation results. This work presents an integrated experimental and TCAD approach for process optimization and mechanistic analysis of a-GaO_x TFT-PDs. Full article

Heterojunctions combining graphene with transition metal dichalcogenides (TMDCs) have garnered considerable interest in phototransistor research. Molybdenum disulfide (MoS₂) can be well combined with graphene owing to its excellent and special bandgap characteristics. In this study, a photoelectric transistor is designed and fabricated based on a graphene–molybdenum disulfide (MoS₂) van der Waals heterojunction. Its novelty lies in constructing a vertical heterojunction architecture with a well-defined structure, clear interface, and easy gate modulation. It fully utilizes the high mobility of graphene and the appropriate bandgap of MoS₂ to achieve efficient light absorption and carrier transport. The device exhibits a good photoelectric response and stability at room temperature, with key performance indicators including the following: a responsivity of 0.5023 mA/W, and a dark current of approximately 10⁻¹¹ A at a gate voltage of 0 V and approaching 10⁻¹⁰ A at 30 V; when the light intensity is 1000 mW/cm², the photocurrent reaches the 10⁻⁸ A level, demonstrating the synergistic modulation capability of gate voltage and light intensity. Although its responsivity is lower than some high-performance heterojunction devices, this device has advantages such as a simple structure, controllable preparation, stable room-temperature operation, and the potential for a broad-spectrum response, showing good application prospects in flexible electronics and integrated optoelectronic systems. This study provides an experimental basis and technical path for the development of two-dimensional material heterojunctions in programmable, multifunctional optoelectronic devices. Full article

Near-infrared organic photodetectors (NIR-OPDs) are emerging as versatile platforms for flexible and low-cost optical sensing, yet achieving high-performance in the NIR region remains difficult remains challenging due to intrinsic trade-offs at both the material and device levels, due to the inherent balance required among bandgap narrowing, exciton dissociation, charge transport, and dark-current suppression. This review provides a concise overview of OPD operating mechanisms and the performance metrics governing sensitivity and noise. We highlight recent molecular-engineering strategies—core fluorination, asymmetric π-bridge design, fused-ring rigidification, and polymer backbone/side-chain tuning—that effectively enhance intermolecular ordering, reduce energetic disorder, and extend NIR absorption. Progress in all-polymer detectors and ambipolar phototransistors further demonstrates improved stability and broadened detection capability. Additionally, emerging applications, including NIR communication, biosignal monitoring, flexible imaging, and biometric recognition, showcase the expanding utility of NIR-OPDs. Remaining challenges include pushing detection beyond 1200 nm, simplifying synthesis, and improving long-term stability. Overall, advances in low-bandgap molecular design and device engineering continue to accelerate the practical adoption of NIR-OPDs. Full article

Two-dimensional (2D) materials demonstrate significant potential in photodetector technology. They offer high sensitivity, wide spectral range, flexibility and transparency, especially in infrared detection, promising advancements in wearable and flexible electronics. This study explores the application of 2D materials in high-performance photodetectors. Rhenium diselenide (ReSe₂) was used as the channel, and graphene (Gr) was inserted between ReSe₂ and SiO₂ as the gate electrode to enhance device performance. A ReSe₂/Gr heterostructure field-effect transistor (FET) was fabricated to investigate the role of Gr in improving the optoelectronic properties of ReSe₂ phototransistors. Specifically, the ReSe₂ FET without Gr auxiliary layer demonstrates a responsivity (R) of 294 mA/W, an external quantum efficiency (EQE) of 68.75%, and response times as brief as 40/62 ms. Compared with the ReSe₂ phototransistor, the ReSe₂/Gr phototransistor exhibits significantly improved photoresponsivity and EQE, with the photoresponsivity enhanced by a factor of ap-proximately 3.58 and the EQE enhanced by a factor of approximately 3.59. These enhancements are mainly attributed to optimization of interfacial band alignment and the strengthened photogating effect by Gr auxiliary layer. This research not only underscores the pivotal role of Gr in boosting the capabilities of 2D photodetectors but also offers a viable strategy for developing high-performance photodetectors with 2D materials. Full article

Polymeric semiconductors have rapidly evolved from early conductive polymers, such as polyacetylene, to high-performance donor–acceptor copolymers, offering a unique combination of mechanical flexibility, solution processability, and tunable optoelectronic properties. These advancements have positioned polymeric semiconductors as versatile materials for next-generation electronics, including wearable, stretchable, and bio-integrated devices, IoT systems, and soft robotics. In this review, we systematically present the fundamental principles of polymeric semiconductors, including electronic structure, charge transport mechanisms, molecular packing, and solid-state morphology, and elucidate how these factors collectively govern device performance. We further discuss recent advances in synthesis strategies, thin-film processing techniques, molecular doping, and interface engineering, emphasizing their critical roles in improving operational stability, charge-carrier mobility, and energy efficiency. Key applications—such as organic photovoltaics, field-effect transistors, neuromorphic devices, and memristors—are analyzed, with a focus on the intricate structure–property–performance relationships that dictate functionality. Finally, we highlight emerging directions and scientific innovations, including sustainable and degradable polymers, hybrid and two-dimensional polymer systems, and novel strategies to enhance device stability and performance. By integrating fundamental polymer science with device engineering, this review provides a comprehensive, structured, and forward-looking perspective, identifying knowledge gaps and offering insights to guide future breakthroughs and the rational design of high-performance, multifunctional, and environmentally responsible polymeric electronic devices. Full article

In recent years, indium-oxide thin-film transistors (IOTFTs) have been developed with high electron mobility, low power consumption, and good environmental stability. A major challenge in current IOTFTs research lies in developing high-performance devices through low-temperature processes while simultaneously expanding their functionality into photonic applications. Our study proposes a low-temperature annealing method for high-performance IOTFTs fabrication, combining substrate heating and a multi-stage annealing process. The optimized device exhibits a device mobility of 47.99 cm²/V·s, a threshold voltage of 2.8 V, a subthreshold swing (SS) of 742.83 mV/dec, and good stability under bias stress tests. Building upon the IOTFTs, we extend the functionality to photonic applications by integrating poly[[2,3,5,6-tetrahydro-2,5-bis(2-octyldodecyl)-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl]-2,5-thiophenediylthieno[3,2-b]thiophene-2,5-diyl-2,5-thiophenediyl] (DPPDTT) photoresponsive layer, achieving a phototransistor with responsivity of 3.7 A/W and detectivity of 5.86 × 10¹¹ Jones at 850 nm near-infrared light. This work provides a new approach for fabricating high-performance indium-oxide thin-film transistors and phototransistors with low-temperature annealing. Full article

Organic phototransistors exhibit considerably higher photoresponsivity than diode-like photodetectors owing to gate-field-effect amplification. However, the conventional definition of photoresponsivity (R) fails to accurately capture the photoresponsivity trends of transistor-based photodetectors. This study systematically investigates the impact of device geometry—specifically the width-to-length (W/L) ratio and photosensitive area—on the responsivity and photocurrent of organic phototransistors. The experimental results reveal that increasing the W/L ratio or decreasing the device area substantially enhances responsivity. A detailed analysis based on the definition of responsivity is presented herein. Finally, we introduce a channel-width-normalized responsivity to compensate for geometric effects, enabling a more accurate evaluation of device performance across different device structures. Overall, our results indicate the potential for optimizing organic phototransistors by tuning their geometric parameters. Full article

Artificial photoelectric synapses exhibit great potential for overcoming the Von Neumann bottleneck in computational systems. All-inorganic halide perovskites hold considerable promise in photoelectric synapses due to their superior photon-harvesting efficiency. In this study, a novel wavy-structured CsPbBr₃/ZnO hybrid film was realized by depositing zinc oxide (ZnO) onto island-like CsPbBr₃ film via atomic layer deposition (ALD) at 70 °C. Due to the capability of ALD to grow high-quality films over small surface areas, dense and thin ZnO film filled the gaps between the island-shaped CsPbBr₃ grains, thereby enabling reduced light-absorption losses and efficient charge transport between the CsPbBr₃ light absorber and the ZnO electron-transport layer. This ZnO/island-like CsPbBr₃ hybrid synaptic transistor could operate at a drain-source voltage of 1.0 V and a gate-source voltage of 0 V triggered by green light (500 nm) pulses with low light intensities of 0.035 mW/cm². The device exhibited a quiescent current of ~0.5 nA. Notably, after patterning, it achieved a significantly reduced off-state current of 10⁻¹¹ A and decreased the quiescent current to 0.02 nA. In addition, this transistor was able to mimic fundamental synaptic behaviors, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term to long-term plasticity (STP to LTP) transitions, and learning-experience behaviors. This straightforward strategy demonstrates the possibility of utilizing neuromorphic synaptic device applications under low voltage and weak light conditions. Full article

This study introduces a comprehensive physical modeling framework for phototransistors based on quasi-two-dimensional transition metal dichalcogenides, with a particular emphasis on MoS₂. By integrating electromagnetic simulations of optical absorption with semiconductor transport calculations, the model captures both dark and photocurrent behaviors across diverse operating conditions. For 20 nm MoS₂ films, the model reproduces the experimental transfer characteristics with a threshold voltage accuracy better than 0.1 V and achieves quantitative agreement with photocurrent and dark current values across the full range of gate voltages, with the worst-case deviation not exceeding a factor of seven. Additionally, the model captures a three-order-of-magnitude increase in the photocurrent as the MoS₂ thickness varies from 4 nm to 40 nm, reflecting the strong thickness dependence observed experimentally. A key insight from the study is the critical role of defect states, including traps, impurities, and interfacial imperfections, in governing the dark current and photocurrent under channel pinch-off conditions (Vg < −1.0 V). The model successfully replicates the qualitative trends observed in experimental devices, highlighting how small variations in film thickness, doping levels, and contact geometries can significantly influence device performance, in agreement with published experimental data. These findings underscore the importance of precise defect characterization and optimization of material and structural parameters for 2D-material-based phototransistors. The proposed modeling framework serves as a powerful tool for the design and optimization of next-generation phototransistors, facilitating the integration of 2D materials into practical electronic and optoelectronic applications. Full article

We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm², the proposed device achieves a photocurrent density of 1.68 × 10⁻³ mA/mm, responsivity of 8.41 × 10⁵ A/W, photo-to-dark-current ratio of 2.0 × 10⁸, UV-to-visible rejection ratio exceeding 10⁸, detectivity above 1 × 10¹⁹ cm·Hz^1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. Full article

We report an ion-gel-gated amorphous indium gallium zinc oxide (a-IGZO) optoelectronic neuromorphic transistors capable of synaptic emulation in both photoelectric dual modes. The ion-gel dielectric in the coplanar-structured transistor, fabricated via ink-jet printing, exhibits excellent double-layer capacitance (>1 μF/cm²) and supports low-voltage operation through lateral gate coupling. The integration of ink-jet printing technology enables scalable and large-area fabrication, highlighting its industrial feasibility. Electrical stimulation-induced artificial synaptic behaviors were successfully demonstrated through ion migration in the gel matrix. Through a simple and controllable oxygen vacancy engineering process involving low-temperature oxygen-free growth and post-annealing process, a sufficient density of stable subgap states was generated in IGZO, extending its responsivity spectrum to the visible-red region and enabling wavelength-discriminative photoresponses to 450/532/638 nm visible light. Notably, the subgap states exhibited unique interaction dynamics with low-energy photons in optically triggered pulse responses. Critical synaptic functionalities—including short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse facilitation (PPF)—were successfully simulated under both optical and electrical stimulations. The device achieves low energy consumption while maintaining compatibility with flexible substrates through low-temperature processing (≤150 °C). This study establishes a scalable platform for multimodal neuromorphic systems utilizing printed iontronic architectures. Full article

Monolayer MoS₂ has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS₂, such as vacancies or impurities, provide more possibilities for carrier recombination; thus, restricting the formation of photocurrents and resulting in decreased responsiveness. Herein, all-inorganic CsPbBr₃ perovskite quantum dots (QDs) with high photoelectric conversion efficiency and light absorption coefficients are introduced to enhance the responsivity of a 2D MoS₂ phototransistor. The CsPbBr₃/MoS₂ heterostructure has a type II energy band, and it has a high responsivity of ~1790 A/W and enhanced detectivity of ~2.4 × 10¹¹ Jones. Additionally, the heterostructure CsPbBr₃/MoS₂ enables the synergistic effect mechanism of photoconduction and photogating effects with the gate tunable photo-response, which could also contribute to an improved performance of the MoS₂ phototransistor. This work provides new strategies for performance phototransistors and is expected to play an important role in many fields, such as optical communication, environmental monitoring and biomedical imaging, and promote the development and application of related technologies. Full article

In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV. The SiC npn detector featured stable and clear response to the X-ray within 0.0766 Gy∙s⁻¹ to 0.766 Gy∙s⁻¹ below 300 V. Due to to the low leakage current of less than 1 nA and the fully depleted sensitive region, the bipolar-transistor-modeled SiC npn detector exhibited a clear common-emitter current gain of 5.85 at 200 V (under 0.383 Gy∙s⁻¹), where the gain increased with bias voltage due to the Early effect and reached 7.55 at 300 V. In addition, the transient response of the SiC npn detector revealed a longer delay time than the SiC diode of the same size, which was associated with the larger effective capacitance of the npn structure. The npn detector with internal gain showed great potential in radiation detection. Full article

We investigate the inorganic/organic hybrid vertical phototransistor (VPT) by integrating an atomic layer deposition-processed ZnO (ALD-ZnO) transistor with a prototype poly(3-hexylthiophene):[6,6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PC₆₁BM) blend organic photodiode (OPD) based on an encapsulated source electrode geometry, and discuss the device mechanism. Our preliminary studies on reference P3HT:PC₆₁BM OPDs show non-ohmic electron injection between the ALD-ZnO and P3HT:PC₆₁BM layers. However, the ALD-ZnO layer enables the accumulation of photogenerated holes under negative bias, which facilitates electron injection upon illumination and thereby enhances the external quantum efficiency (EQE). This mechanism underpins the photoresponse in the VPT. Furthermore, we demonstrate that the gate field in the VPT effectively modulates electron injection from the ALD-ZnO layer to the top OPD, resulting in the VPT operating as a non-ohmic OPD in the OFF state and as an ohmic OPD in the ON state. Benefiting from the unique transistor geometry and gate modulation capability, this hybrid VPT can achieve an EQE of 45,917%, a responsivity of 197 A/W, and a specific detectivity of 3.4 × 10¹² Jones under 532 nm illumination and low drain-source voltage (V_ds = 3 V) conditions. This transistor geometry also facilitates integration with various OPDs and the miniaturization of the ZnO channel area, offering an ideal basis for the development of highly efficient VPTs and high-resolution image sensors. Full article

This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-area or flexible substrate applications. Additionally, this review highlights the physical mechanisms governing the optoelectronic properties of high-performance organic materials, particularly photoinduced processes relevant to charge carrier photogeneration. It discusses the unique benefits of organic materials over traditional inorganic materials, including their light weight, simple processing, and flexibility. The report delves into the challenges related to stability, scalability, and performance, while highlighting the wide range of electronic properties exhibited by organic materials, which are critical for their performances in optoelectronic devices. Furthermore, it addresses the need for further research and development in this field to achieve consistent performance across different types of devices. Full article