Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
8.5
4.4
Journals
Nanomaterials
Special Issues
Photonics/Optoelectronics Properties and Applications of Two-Dimensional Heterostructures
share announcement

Photonics/Optoelectronics Properties and Applications of Two-Dimensional Heterostructures

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 12 September 2025 | Viewed by 1724

Special Issue Editors

Dr. Hailu Wang

E-Mail Website1 Website2
Guest Editor
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Interests: infrared photodetectors; van der Waals homojunctions and heterojunctions; 2D materials; non-equilibrium carriers; avalanche multiplication effect
Special Issues, Collections and Topics in MDPI journals
Dr. Tiange Zhao

E-Mail Website
Guest Editor
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Interests: 2D materials; CVD; wafer-scale epitaxy; infrared photodetection; vdW heterojunction
Prof. Dr. Zhigao Hu

E-Mail Website
Guest Editor
Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, China
Interests: optoelectronic functional materials and micro/nanodevices; phase transition materials and electronic devices; optoelectronic characteristic experimental systems under extreme conditions; condensed matter spectroscopy; two-dimensional semiconductors and optoelectronic devices

Special Issue Information

Dear Colleagues,

Two-dimensional heterostructures have garnered significant attention in photonics and optoelectronics due to their tunable bandgap and potential applications in optoelectronics. Researchers can create advanced devices with enhanced functionalities and performance by combining different two-dimensional materials or integrating them with zero-dimensional quantum dots, one-dimensional nanowires, or three-dimensional bulk materials possessing complementary optical and electronic characteristics. These heterostructures exhibit fascinating optical and electronic properties, such as adjustable photoresponse spectrum, strong light-matter interactions, and efficient charge transport. Recently, there has been a growing emphasis on utilizing two-dimensional heterostructures in various electrical and optoelectronic applications, including photodetectors, photodiodes, solar cells, transistors, and photonic integrated circuits. Exploring the photonics/optoelectronics properties and applications of two-dimensional heterostructures shows great promise for advancing next-generation optoelectronic technologies with improved performance and functionality.

Dr. Hailu Wang
Dr. Tiange Zhao
Prof. Dr. Zhigao Hu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • two-dimensional materials
  • heterostructures
  • photodetectors
  • photodiodes
  • field-effect transistors
  • charge carrier transport

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

11 pages, 3669 KiB  
Article
The Crystal Structure and Luminescence Behavior of Self-Activated Halotungstates Ba3WO5Cl2 for W-LEDs Applications
by Liuyang Zhang, Shijin Zhou, Jiani Meng, Yuxin Zhang, Jiarui Zhang, Qinlan Ma, Lin Qin and Man Luo
Nanomaterials 2025, 15(4), 311; https://doi.org/10.3390/nano15040311 - 18 Feb 2025
Viewed by 466
Abstract
The self-activated halotungstate Ba3WO5Cl2 was successfully synthesized using a high-temperature solid-state method. X-ray diffraction analysis (XRD) confirmed the formation of a single-phase compound with a monoclinic crystal structure, ensuring the material’s purity and structural integrity. The luminescence properties [...] Read more.
The self-activated halotungstate Ba3WO5Cl2 was successfully synthesized using a high-temperature solid-state method. X-ray diffraction analysis (XRD) confirmed the formation of a single-phase compound with a monoclinic crystal structure, ensuring the material’s purity and structural integrity. The luminescence properties of Ba3WO5Cl2 were thoroughly investigated using both optical and laser-excitation spectroscopy. The photoluminescent excitation (PLE) and emission (PL) spectra, together with the corresponding decay curves, were recorded across a broad temperature range, from 10 K to 480 K. The charge transfer band (CTB) of the [WO5Cl] octahedron was clearly identified in both the PL and the PLE spectra under ultraviolet light excitation, indicating efficient energy transfer within the material’s structure. A strong blue emission could be detected around 450 nm, which is characteristic of the material’s luminescent properties. However, this emission exhibited thermal quenching as the temperature increased, a common phenomenon where the luminescence intensity diminishes due to thermal effects. To better understand the thermal quenching behavior, variations in luminescence intensity and decay time were analyzed using a straightforward thermal quenching model. This comprehensive study of Ba3WO5Cl2 luminescent properties not only deepens the understanding of its photophysical behavior but also contributes to the development of novel materials with tailored optical properties for specific technological applications. Full article
(This article belongs to the Special Issue Photonics/Optoelectronics Properties and Applications of Two-Dimensional Heterostructures)
►▼ Show Figures

Figure 1

10 pages, 2484 KiB  
Article
Switchable Negative Group Delay Based on Sandwich Topological Protection Structure in Terahertz Band
by Jiao Xu, Xianmin Pan, Jiao Tang, Xianghua Peng and Yuxiang Peng
Nanomaterials 2025, 15(4), 251; https://doi.org/10.3390/nano15040251 - 7 Feb 2025
Viewed by 647
Abstract
A switchable enhancement group delay in the terahertz band based on a novel sandwich topology protection structure with graphene is proposed in this paper. The notable phase transition of the reflected beam comes from the topological edge-protected mode excited at the sandwich photonic [...] Read more.
A switchable enhancement group delay in the terahertz band based on a novel sandwich topology protection structure with graphene is proposed in this paper. The notable phase transition of the reflected beam comes from the topological edge-protected mode excited at the sandwich photonic crystal surface, and the non-trivial topology of the photonic crystal allows the structure to be immune against defects and imperfections, which lays the foundation for the enhancement of group delay in the terahertz band. And the introduction of graphene creates favorable conditions for the reversible switching of positive and negative reflection group delay. Moreover, the reflected group delay can also be flexibly and dynamically controlled by the incident angle. The positive and negative reversible switching reflected group delay proposed in the terahertz band greatly reduces the optical transmission loss and significantly increases the transmission efficiency compared with the traditional metal sandwich structure, which provides a feasible idea for the realization of multi-dimensional manipulation of the wavelength and phase of electromagnetic waves in the terahertz band. The novel scheme is expected to provide potential applications in fields such as optical buffers or ultrafast modulators. Full article
(This article belongs to the Special Issue Photonics/Optoelectronics Properties and Applications of Two-Dimensional Heterostructures)
►▼ Show Figures

Figure 1

Review

Jump to: Research

15 pages, 5562 KiB  
Review
Avalanche Multiplication in Two-Dimensional Layered Materials: Principles and Applications
by Zhangxinyu Zhou, Mengyang Kang, Yueyue Fang, Piotr Martyniuk and Hailu Wang
Nanomaterials 2025, 15(9), 636; https://doi.org/10.3390/nano15090636 - 22 Apr 2025
Abstract
The avalanche multiplication effect, capable of significantly amplifying weak optical or electrical signals, plays a pivotal role in enhancing the performance of electronic and optoelectronic devices. This effect has been widely employed in devices such as avalanche photodiodes, impact ionization avalanche transit time [...] Read more.
The avalanche multiplication effect, capable of significantly amplifying weak optical or electrical signals, plays a pivotal role in enhancing the performance of electronic and optoelectronic devices. This effect has been widely employed in devices such as avalanche photodiodes, impact ionization avalanche transit time diode, and impact ionization field-effect transistors, enabling diverse applications in biomedical imaging, 3D LIDAR, high-frequency microwave circuits, and optical fiber communications. However, the evolving demands in these fields require avalanche devices with superior performance, including lower power consumption, reduced avalanche threshold energy, higher efficiency, and improved sensitivity. Over the years, significant efforts have been directed towards exploring novel device architectures and multiplication mechanisms. The emergence of two-dimensional (2D) materials, characterized by their exceptional light-matter interaction, tunable bandgaps, and ease of forming junctions, has opened up new avenues for developing high-performance avalanche devices. This review provides an overview of carrier multiplication mechanisms and key performance metrics for avalanche devices. We discuss several device structures leveraging the avalanche multiplication effect, along with their electrical and optoelectronic properties. Furthermore, we highlight representative applications of avalanche devices in logic circuits, optoelectronic components, and neuromorphic computing systems. By synthesizing the principles and applications of the avalanche multiplication effect, this review aims to offer insightful perspectives on future research directions for 2D material-based avalanche devices. Full article
(This article belongs to the Special Issue Photonics/Optoelectronics Properties and Applications of Two-Dimensional Heterostructures)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop