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Special Issue "Advances in MMICs"

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A special issue of Micromachines (ISSN 2072-666X).

Deadline for manuscript submissions: closed (28 February 2015)

Special Issue Editor

Guest Editor
Dr. Geok Ing Ng (Website)

Division of Microelectronics, School of Electrical & Electronic Engineering, College of Engineering, Nanyang Technological University, Singapore 639798
Fax: +65-6793-3318
Interests: compound semiconductor based high frequency devices; gallium nitride on silicon HEMTs; MMIC

Special Issue Information

Dear Colleagues,

Monolithic Microwave Integrated Circuits (MMICs) have come a long way since its first inception in 1968. The effort to develop MMIC technology was originally motivated by the needs to develop miniature size microwave circuits primarily for defense applications. The MIMIC program by Defense Advanced Research Projects Agency (DARPA) was one of the main driving forces to push for the state-of-the-art MMIC technologies. The program was an overwhelming success which gave rise to MMICs that are being deployed in many defense electronic systems. With the success of this breakthrough technology, MMICs were subsequently adopted by commercial foundries worldwide for many of today’s commercial applications.

Since the first realization of MMIC using GaAs MESFET technology, MMIC performance has made tremendous progress with the advancement in material and device technologies. For examples, GaAs-based and InP-based HEMTs and HBTs, and the more recent GaN-based HEMTs. Si-based MMICs, in particular, have also made remarkable advancement over the years with unprecedented high operating frequencies. Besides active devices, passive components and design techniques have also made significant progress, further contributing to the enhancement of device performance, improvement of form factor and cost reduction of modern day MMICs.

This special issue will invite manuscripts on MMIC-related papers in areas including but not limited to active and passive components for MMIC applications, MMIC design, packaging, testing and reliability. The papers may be of original contributions or reviews. We aim for this special issue to refresh our memories on the past development of MMICs, their recent developments and also provide us with a glimpse of the future trend in this technology.

Dr. Geok Ing Ng
Guest Editor

Submission

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. Papers will be published continuously (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are refereed through a peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed Open Access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1000 CHF (Swiss Francs).

Keywords

  • MMIC
  • microwave/millimeter-wave
  • compound semiconductors
  • MESFET; HEMT; HBT
  • transistors; diodes
  • active components; passive components
  • packaging
  • reliability

Published Papers (5 papers)

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Research

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Open AccessArticle Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology
Micromachines 2015, 6(5), 592-599; doi:10.3390/mi6050592
Received: 1 March 2015 / Revised: 2 May 2015 / Accepted: 7 May 2015 / Published: 12 May 2015
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Abstract
This paper presents the design of terahertz 2× and 4× sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 μm SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs) are designed based on anti-parallel-diode-pairs (APDPs). With the 2nd and 4th harmonic, [...] Read more.
This paper presents the design of terahertz 2× and 4× sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 μm SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs) are designed based on anti-parallel-diode-pairs (APDPs). With the 2nd and 4th harmonic, local oscillator (LO) frequencies of 170 GHz and 85 GHz are used to pump the two 340 GHz SHMs. With LO power of 7 dBm, the 2× SHM exhibits a conversion loss of 34.5–37 dB in the lower band (320–340 GHz) and 35.5–41 dB in the upper band (340–360 GHz); with LO power of 9 dBm, the 4× SHM exhibits a conversion loss of 39–43 dB in the lower band (320–340 GHz) and 40–48 dB in the upper band (340–360 GHz). The measured input 1-dB conversion gain compression point for the 2× and 4× SHMs are −8 dBm and −10 dBm at 325 GHz, respectively. The simulated LO-IF (intermediate frequency) isolation of the 2× SHM is 21.5 dB, and the measured LO-IF isolation of the 4× SHM is 32 dB. The chip areas of the 2× and 4× SHMs are 330 μm × 580 μm and 550 μm × 610 μm, respectively, including the testing pads. Full article
(This article belongs to the Special Issue Advances in MMICs)
Open AccessArticle A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology
Micromachines 2015, 6(3), 390-395; doi:10.3390/mi6030390
Received: 2 February 2015 / Revised: 23 February 2015 / Accepted: 24 February 2015 / Published: 23 March 2015
Cited by 1 | PDF Full-text (351 KB) | HTML Full-text | XML Full-text
Abstract
This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads. Lumped-distributed element transmission line is introduced in the [...] Read more.
This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads. Lumped-distributed element transmission line is introduced in the 90° hybrid coupler to reduce the chip size. Series inductor-capacitor (LC) resonators are used as the reflective loads and parallel inductors are deployed to reduce insertion loss variation. By cascading two-stage RTPS, 90° phase shifting range and 10.5 dB insertion loss with 1 dB variations from 80 GHz to 90 GHz are achieved. An impressive 0.1 dB variation is obtained at 86 GHz. Full article
(This article belongs to the Special Issue Advances in MMICs)
Open AccessArticle Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios
Micromachines 2014, 5(3), 711-721; doi:10.3390/mi5030711
Received: 5 June 2014 / Revised: 9 August 2014 / Accepted: 3 September 2014 / Published: 12 September 2014
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Abstract
This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown. The first design is a 7 GHz Doherty developed with a [...] Read more.
This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown. The first design is a 7 GHz Doherty developed with a research foundry, while thesecond and the third are a 7 GHz Doherty and a 7–15 GHz dual-band combined poweramplifiers, both based on a commercial foundry process. The employed architectures, themain design steps and the pros and cons of using gallium nitride technology are highlighted.The measured performance demonstrates the potentialities of the employed technology, andthe progress in the accuracy, reliability and performance of the process. Full article
(This article belongs to the Special Issue Advances in MMICs)
Figures

Open AccessArticle Reliability Investigation of GaN HEMTs for MMICs Applications
Micromachines 2014, 5(3), 570-582; doi:10.3390/mi5030570
Received: 30 May 2014 / Revised: 21 July 2014 / Accepted: 21 July 2014 / Published: 22 August 2014
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Abstract
Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts [...] Read more.
Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented. Full article
(This article belongs to the Special Issue Advances in MMICs)

Review

Jump to: Research

Open AccessReview Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits
Micromachines 2014, 5(4), 1373-1415; doi:10.3390/mi5041373
Received: 13 March 2014 / Revised: 15 September 2014 / Accepted: 5 November 2014 / Published: 10 December 2014
Cited by 2 | PDF Full-text (6178 KB) | HTML Full-text | XML Full-text
Abstract
In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. [...] Read more.
In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs. Full article
(This article belongs to the Special Issue Advances in MMICs)

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