Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

Round 1

Reviewer 1 Report

The manuscript concerns the experimental characterization of modern XBn detector with Ga-free absorber. The manuscript presents interesting measurements of quite novel devices, but the novelty of the methodology is limited. Nevertheless, the article may be interesting to the IR community and may be published after some clarifications/revisions:

1)     Quality of Figure 3 is not satisfactory, the X-axis title „Temps” is unclear.

2)     a) Authors claim that fitting provided in Figure 8 indicates g-r current contribution due to Eg/2 dependence. This is true only if the defects energy lies exactly in the middle of the band gap. It is well known that this is the case of InAs/GaSb material, but I am not sure about such defect locations in the Ga-free material. (b) The fitting itself bases on only three points; what about lower temperatures? (c) Did the authors exclude surface components with Eg/2 activation energy? (d) Is the P/A analysis support the bulk-related origin of a current component?

 

3)     (a) Authors claim that the band structure in Fig. 10 was deduced from measurements. It is unclear what parameters (VBO?) were deduced. (b) I see band bending on this figure, so it can be concluded that the electric field penetrates the barrier and even absorber at V=0 V, which contradicts conclusions from measurements.

Author Response

see attached file

Author Response File: Author Response.docx

Reviewer 2 Report

This work is generally a good one. But, I find that the manuscript is not well organized. My detailed comments are listed in attached files.

Comments for author File: Comments.pdf

Author Response

see attached file

Author Response File: Author Response.docx

Round 2

Reviewer 1 Report

The authors improved the manuscript and correctly addressed my comments. I recommend the manuscript for publication as is.