Emerging Electronic Device Materials

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (15 February 2024) | Viewed by 1710

Special Issue Editor


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Guest Editor
Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China
Interests: power electronic system control strategy; reliability and electromagnetic compatibility; condition monitoring for power electronics; power semiconductor module thermal modeling
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Special Issue Information

Dear Colleagues,

Electronic materials are widespread in modern society. This Special Issue will include a large variety of materials and related device technologies, such as nanostructures, conventional semiconductors (Si, Ge, SiGe, GaAs, etc.), wide-bandgap semiconductors (SiC, GaN, Ga2O3, ZnO, AlN, diamond, etc.), heterostructures, nanowires, 2D materials and compounds, optical and energy harvesting materials, etc. In addition, the development and application of advanced characterization techniques for electronic materials and devices are also in line with the scope of this SI. The topics of interest include, but are not limited to, the following:

  • Dielectric and ferroelectric materials;
  • Optoelectronic materials;
  • Thermoelectric materials;
  • Wide-bandgap semiconductor devices;
  • Organic semiconductors and their devices;
  • Spintronic materials, devices and instrumentation;
  • 2D materials and novel devices;
  • Organic and perovskite electronic devices.

Prof. Dr. Mingxing Du
Guest Editor

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Keywords

  • power electronic device reliability
  • wide-bandgap semiconductor devices
  • 2D materials
  • electronic devices

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Published Papers (1 paper)

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Research

11 pages, 2376 KiB  
Article
Investigating the Effect of Cross-Conjugation Patterns on the Optoelectronic Properties of 7,7′Isoindigo-Based Materials
by Shiwei Ren, Amirhossein Habibi, Yujie Wang and Abderrahim Yassar
Electronics 2023, 12(15), 3313; https://doi.org/10.3390/electronics12153313 - 2 Aug 2023
Cited by 3 | Viewed by 1427
Abstract
Isoindigo (IID) is widely used as a building block for the fabrication of organic semiconductor devices. Understanding the impact of cross-conjugation and linear conjugation on the optoelectronic properties of disubstituted IID is of great importance for the design of improved materials. In this [...] Read more.
Isoindigo (IID) is widely used as a building block for the fabrication of organic semiconductor devices. Understanding the impact of cross-conjugation and linear conjugation on the optoelectronic properties of disubstituted IID is of great importance for the design of improved materials. In this study, phenyl and thienyl groups were substituted at the cross-conjugated 7,7′ position of IID to generate three novel organic semiconductor structures with a donor–acceptor architecture. The optoelectronic properties of this IID derivative were investigated and compared with those of the 6,6′ linearly conjugated IID analogs using UV–Vis spectroscopy and cyclic voltammetry. The experimental results were compared using density functional theory calculations to provide structure–property relationships based on substitution types and attachment sites for IID. The frontier orbital energy levels of the material did not vary dramatically with the position of the substituent, while the type of substituent showed a more significant influence on the HOMO’s energy level and oscillator strength. Phenyl-disubstituted 7,7′ IID (7Ph7′Ph) and thienyl-disubstituted 7,7′ IID (7Th7′Th) materials were used as electron transport layers in perovskite solar cells with a power conversion efficiency of 5.70% and 6.07%, respectively. These observations enhance our understanding of the electronic structure and optoelectronic properties of IID, guiding the design of the next generation of IID-based semiconductors. Full article
(This article belongs to the Special Issue Emerging Electronic Device Materials)
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