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Advances in Electronic Films: Preparation, Characterization, and Applications
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Advances in Electronic Films: Preparation, Characterization, and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 30 September 2025 | Viewed by 1736

Special Issue Editors

Dr. Lukasz Wachnicki

E-Mail Website
Guest Editor
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warszawa, Poland
Interests: solid state physics; metal–oxide–semiconductor; atomic layer deposition; thin films; X-ray powder diffraction
Special Issues, Collections and Topics in MDPI journals
Dr. Sylwia Gierałtowska

E-Mail Website
Guest Editor
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warszawa, Poland
Interests: solid state physics; atomic layer deposition; thin films; dielectrics; high-k materials; semiconductors; antibacterial layers; atomic force microscopy; spintronics; electronics; photovoltaics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues

In this Special Issue, we encourage submissions of all articles discussing the preparation, characterization, and application of thin films for use in advanced electronics.

Thin films, nanomaterials, nanotubes, etc. play crucial roles in modern technology, forming the foundation for electronic devices, ranging from transistors and solar cells to touchscreens and flexible electronics. As research in this field progresses, advancements are continuously being made in the preparation, characterization, and application of these films. For the preparation of these devices, scientists are exploring novel methods for depositing thin films, such as atomic layer deposition (ALD), pulsed laser deposition (PLD), molecular beam epitaxy (MBE), and solution-based processing.

As advancements in electronic films are driven by continuous research and development in their preparation, characterization, and application and these advancements lead to the development of innovative and high-performance devices that will have a significant impact on various sectors in the future, we invite you to submit your manuscripts to this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Lukasz Wachnicki
Dr. Sylwia Gierałtowska
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D and 3D nanomaterials
  • wide bandgap semiconductor
  • electronic, photonic, and spintronic applications
  • nanocomposite materials—synthesis and characterization
  • growth method—ALD, CVD, PVD, MBE, etc.

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Published Papers (1 paper)

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Research

14 pages, 3694 KiB  
Article
Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3
by Mahwish Sarwar, Renata Ratajczak, Vitalii Yu. Ivanov, Sylwia Gieraltowska, Aleksandra Wierzbicka, Wojciech Wozniak, René Heller, Stefan Eisenwinder and Elżbieta Guziewicz
Materials 2024, 17(16), 3979; https://doi.org/10.3390/ma17163979 - 10 Aug 2024
Cited by 1 | Viewed by 1438
Abstract
β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by [...] Read more.
β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In this work, we investigate the crystal lattice recovery of (2¯01)-oriented β-Ga2O3 crystals implanted with Yb ions to the fluence of 1 ×1014 at/cm2. Post-implantation annealing at a range of temperature and different atmospheres was used to investigate the β-Ga2O3 crystal structure recovery and optical activation of Yb ions. Ion implantation is a renowned technique used for material doping, but in spite of its many advantages such as the controlled introduction of dopants in concentrations exceeding the solubility limits, it also causes damage to the crystal lattice, which strongly influences the optical response from the material. In this work, post-implantation defects in β-Ga2O3:Yb crystals, their transformation, and the recovery of the crystal lattice after thermal treatment have been investigated by channeling Rutherford backscattering spectrometry (RBS/c) supported by McChasy simulations, and the optical response was tested. It has been shown that post-implantation annealing at temperatures of 700–900 °C results in partial crystal lattice recovery, but it is accompanied by the out-diffusion of Yb ions toward the surface if the annealing temperature and time exceed 800 °C and 10 min, respectively. High-temperature implantation at 500–900 °C strongly limits post-implantation damage to the crystal lattice, but it does not cause the intense luminescence of Yb ions. This suggests that the recovery of the crystal lattice is not a sufficient condition for strong rare-earth photoluminescence at room temperature and that oxygen annealing is beneficial for intense infrared luminescence compared to other tested environments. Full article
(This article belongs to the Special Issue Advances in Electronic Films: Preparation, Characterization, and Applications)
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