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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 April 2022) | Viewed by 14820

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Prof. Dr. Antonio Terrasi

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Dipartimento di Fisica e Astronomia, Università di Catania & IMM-CNR, Via S. Sofia 64, 95123 Catania, Italy
Interests: advanced materials for photovoltaics; TCO; semiconductors; nanostructures; thin films
Special Issues, Collections and Topics in MDPI journals

Dr. Maria Miritello

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Co-Guest Editor

Istituto Per La Microelettronica E Microsistemi, Catania, Italy
Interests: photonics; energy; thin film deposition; nanoclusters; visible emitteing sources; rare earths
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue aims to publish recent and appealing theoretical and experimental results in the field of novel materials for optoelectronics. The supporting idea is to provide a wide vision of basic and applied research in material science applied to several fields, such as optoelectronics, photonics, light emission and absorption, photovoltaics, transparent conductors, transparent electronics, nanostructures, medicine, energy, biology, agriculture, water purification or sustainability in general. Indeed, such a broad and interdisciplinar range of topics and applications is one of the most interesting and stimulating aspects of modern material science. Physicists, chemists, engineers, biologists, and other specialists are pushed to work in a team and to interact, facing and solving new scientific and technological challenges. With this goal, we strongly encourage the submission of manuscripts focusing on “new optoelelctronic materials” in any area of application, provided that the publication shows new achievements or ideas in this field.

Prof. Antonio Terrasi
Dr. Maria Miritello
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

photonics
optoelectronics
light emitting materials
light absorbing materials
photovoltaics
transparent conductors
nanostructured materials
light-induced effects

Published Papers (6 papers)

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Research

10 pages, 2487 KiB

Open AccessArticle

Diamond Structures for Tuning of the Finesse Coefficient of Photonic Devices

by Monika Kosowska, Awadesh K. Mallik, Michał Rycewicz, Ken Haenen and Małgorzata Szczerska

Materials 2022, 15(7), 2552; https://doi.org/10.3390/ma15072552 - 31 Mar 2022

Viewed by 1406

Abstract

Finesse coefficient is one of the most important parameters describing the properties of a resonant cavity. In this research, a mathematical investigation of the application of diamond structures in a fiber-optic Fabry–Perot measurement head to assess their impact on the finesse coefficient is proposed. We present modeled transmission functions of cavities utilizing a nitrogen-doped diamond, a boron-doped diamond, nanocrystalline diamond sheet and a silver mirror. The diamond structures were deposited using a microwave plasma-assisted chemical vapor deposition system. A SEM investigation of surface morphology was conducted. The modeling took into consideration the fiber-optic Fabry–Perot setup working in a reflective mode, with an external cavity and a light source of 1550 nm. A comparison of the mathematical investigation and experimental results is presented. Full article

(This article belongs to the Special Issue Novel Optoelectronic Materials)

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10 pages, 1859 KiB

Open AccessArticle

The ZnO-In₂O₃ Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

by Akhmed Akhmedov, Aslan Abduev, Eldar Murliev, Abil Asvarov, Arsen Muslimov and Vladimir Kanevsky

Materials 2021, 14(22), 6859; https://doi.org/10.3390/ma14226859 - 14 Nov 2021

Cited by 7 | Viewed by 2767

Abstract

The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In₂O₃) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In₂O₃ content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In₂O₃) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO. Full article

(This article belongs to the Special Issue Novel Optoelectronic Materials)

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10 pages, 3664 KiB

Open AccessArticle

Aggregation Induced Emission and Nonlinear Optical Properties of an Intramolecular Charge-Transfer Compound

by Songhua Chen, Rui Luo, Xinyue Li, Meiyun He, Shanshan Fu and Jialiang Xu

Materials 2021, 14(8), 1909; https://doi.org/10.3390/ma14081909 - 11 Apr 2021

Cited by 9 | Viewed by 1888

Abstract

Intramolecular charge transfer (ICT) compounds have attracted wide attention for their potential applications in optoelectronic materials and devices such as fluorescent sensors, dye-sensitized solar cells, organic light emitting diodes and nonlinear optics. In this work, we have synthesized a new ICT compound, dimethyl-[4-(7-nitro-benzo[1,2,5]thiadiazol-4-yl)-phenyl]-amine (BTN), and have fabricated it into low dimensional micro/nano structures with well-defined morphologies. These self-assembled nanostructures exhibit high efficiency solid state fluorescence via an aggregation induced emission mechanism, which overcomes the defect of fluorescence quenching caused by aggregation in the solid state of traditional luminescent materials. We also explored and studied the nonlinear optical properties of this material through the Z-scan method, and found that this material exhibits large third-order nonlinear absorption and refraction coefficients, which promises applications of the materials in the fields of nonlinear optics and optoelectronics. Full article

(This article belongs to the Special Issue Novel Optoelectronic Materials)

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15 pages, 2903 KiB

Open AccessArticle

Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

by Stefano Ponzoni, Sonia Freddi, Marta Agati, Vincent Le Borgne, Simona Boninelli, Richard Dolbec, My Ali El Khakani, Stefania Pagliara and Paola Castrucci

Materials 2020, 13(19), 4267; https://doi.org/10.3390/ma13194267 - 25 Sep 2020

Viewed by 2160

Abstract

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide such information. In the present paper, we report on the relaxation dynamics of photogenerated charge-carriers in ultrafine SiNS synthesized by means of inductively-coupled-plasma process. The carriers’ transient regime was characterized in high fluence regime by using a tunable pump photon energy and a broadband probe pulse with a photon energy ranging from 1.2 eV to 2.8 eV while varying the energy of the pump photons and their polarization. The SiNS consist of Si nanospheres and nanowires (NW) with a crystalline core embedded in a SiO_x outer-shell. The NW inner core presents different typologies: long silicon nanowires (SiNW) characterized by a continuous core (with diameters between 2 nm and 15 nm and up to a few microns long), NW with disconnected fragments of SiNW (each fragment with a length down to a few nanometers), NW with a “chaplet-like” core and NW with core consisting of disconnected spherical Si nanocrystals. Most of these SiNS are asymmetric in shape. Our results reveal a photoabsorption (PA) channel for pump and probe parallel polarizations with a maximum around 2.6 eV, which can be associated to non-isotropic ultra-small SiNS and ascribed either to (i) electron absorption driven by the probe from some intermediate mid-gap states toward some empty state above the bottom of the conduction band or (ii) the Drude-like free-carrier presence induced by the direct-gap transition in the their band structure. Moreover, we pointed up the existence of a broadband and long-living photobleaching (PB) in the 1.2–2.0 eV energy range with a maximum intensity around 1.35 eV which could be associated to some oxygen related defect states present at the Si/SiO_x interface. On the other hand, this wide spectral energy PB can be also due to both silicon oxide band-tail recombination and small Si nanostructure excitonic transition. Full article

(This article belongs to the Special Issue Novel Optoelectronic Materials)

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13 pages, 2794 KiB

Open AccessArticle

Growth and Characterization of Cu₂Zn_1−xFe_xSnS₄ Thin Films for Photovoltaic Applications

by Vanira Trifiletti, Giorgio Tseberlidis, Marco Colombo, Alberto Spinardi, Sally Luong, Mati Danilson, Maarja Grossberg, Oliver Fenwick and Simona Binetti

Materials 2020, 13(6), 1471; https://doi.org/10.3390/ma13061471 - 24 Mar 2020

Cited by 13 | Viewed by 3142

Abstract

Photovoltaics is a promising technology to produce sustainable energy, thanks to the high amount of energy emitted by the sun. One way of having solar cells with low production costs is to apply thin-film technology and with earth-abundant raw materials. A keen interest is arising in kesterite compounds, which are chalcogenides composed of abundant and non-toxic elements. They have already achieved excellent performance at the laboratory level. Here, we report the synthesis and characterization of mixed chalcogenides based on copper, zinc, iron, and tin. Solutions have been studied with different zinc and iron ratios. The distortion of the elementary cell of kesterite increases with the addition of iron until a phase transition to stannite occurs. The process of synthesis and deposition proposed herein is cheap and straightforward, based on the sol-gel technique. These thin films are particularly attractive for use in cheap and easily processable solar cells. The synthesized layers have been characterized by X-ray diffraction, UV-Vis absorption, and Raman, X-ray photoelectron, and energy-dispersive X-ray spectroscopy measurements. Full article

(This article belongs to the Special Issue Novel Optoelectronic Materials)

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9 pages, 2247 KiB

Open AccessFeature PaperArticle

Doped Nanocrystalline Diamond Films as Reflective Layers for Fiber-Optic Sensors of Refractive Index of Liquids

by Monika Kosowska, Daria Majchrowicz, Kamatchi J. Sankaran, Mateusz Ficek, Ken Haenen and Małgorzata Szczerska

Materials 2019, 12(13), 2124; https://doi.org/10.3390/ma12132124 - 2 Jul 2019

Cited by 18 | Viewed by 2632

Abstract

This paper reports the application of doped nanocrystalline diamond (NCD) films—nitrogen-doped NCD and boron-doped NCD—as reflective surfaces in an interferometric sensor of refractive index dedicated to the measurements of liquids. The sensor is constructed as a Fabry–Pérot interferometer, working in the reflective mode. The diamond films were deposited on silicon substrates by a microwave plasma enhanced chemical vapor deposition system. The measurements of refractive indices of liquids were carried out in the range of 1.3 to 1.6. The results of initial investigations show that doped NCD films can be successfully used in fiber-optic sensors of refractive index providing linear work characteristics. Their application can prolong the lifespan of the measurement head and open the way to measure biomedical samples and aggressive chemicals. Full article

(This article belongs to the Special Issue Novel Optoelectronic Materials)

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