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Semiconductor Nanostructures: Growth, Characterization, and Applications
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Semiconductor Nanostructures: Growth, Characterization, and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (10 November 2022) | Viewed by 7916

Special Issue Editor

Dr. Francesco Biccari

E-Mail Website
Guest Editor
Department of Physics and Astronomy, University of Florence, 50019 Florence, Italy
Interests: semiconductor nanostructures; semiconductor quantum dots; semiconductor defects; dilute nitrides; copper oxides; perovskites; optical properties; photoluminescence; photonics; photovoltaics

Special Issue Information

Dear Colleagues,

Since the invention of semiconductor quantum wells by Esaki and Tsu in the 1970s, semiconductor nanostructures have evolved from scientific curiosities to means of probing the fundamentals of quantum mechanics, and more recently into building blocks for several different types of semiconductor devices, some of them already well established in the market. In a nanostructure, the important changes in many physical properties with respect to the bulk material are due to the quantum confinement of the carriers, which occurs when the size of the structures becomes comparable to the De Broglie wavelength of the carriers. If the confinement is produced in one, two, or three dimensions, different low-dimensional semiconductors are obtained: quantum wells (2D), 2D materials such as transition metal dichalcogenides, semiconductor nanotubes (1D) such as carbon or boron nitride nanotubes, quantum wires (1D), and quantum dots (0D).

In this Special Issue, we are interested in papers, both theoretical and experimental, related to all aspects connected with semiconductor nanostructures: growth and fabrication, optical, magnetic, and transport properties, and the multitude of their applications in many fields (photonics, spintronics, LEDs, lasers, sensing, quantum information and telecommunication technologies, optoelectronics, photovoltaics, etc.). Particular attention will be devoted to the contributions focused on showing unsolved and stimulating problems, in order to animate the scientific debate and the semiconductor community to address these challenges for the advancement of science.

Dr. Francesco Biccari
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • synthesis, growth, and processing techniques
  • defects and doping
  • optical, electrical, magnetic, thermal properties
  • electronics, optoelectronics, photonics, photovoltaics, spintronics, sensing
  • non-classical light emission
  • cavity-enhanced light matter interaction for non-classical emission and detection
  • theoretical studies and modeling
  • quantum dots, quantum wires, quantum wells
  • nanotubes, nanosheets, nanorods
  • transition metal dichalcogenides
  • 2D materials

Published Papers (3 papers)

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Research

19 pages, 7642 KiB  
Article
Influence of (Sub) Structure Development within Rotary Swaged Al–Cu Clad Conductors on Skin Effect during Transfer of Alternating Current
by Lenka Kunčická, Radim Kocich, Petr Kačor, Michal Jambor and Miroslav Jopek
Materials 2022, 15(2), 650; https://doi.org/10.3390/ma15020650 - 15 Jan 2022
Cited by 3 | Viewed by 1784
Abstract
The nature of alternating current transfer via metallic materials is specific, since the current density tends to be inhomogeneous across the cross-section of the conductor and the skin effect tends to occur. However, the influence of this effect on the behaviour of the [...] Read more.
The nature of alternating current transfer via metallic materials is specific, since the current density tends to be inhomogeneous across the cross-section of the conductor and the skin effect tends to occur. However, the influence of this effect on the behaviour of the conductor can be optimized via the design and fabrication procedures. The study presents innovative design of an Al–Cu clad conductor, which is supposed to affect favourably the influence of the skin effect. The clad conductors of various diameters (20 mm, 15 mm, and 10 mm) were fabricated via rotary swaging at room temperature, and their electric characteristics were subsequently examined both experimentally and via numerical simulations. Structure analyses performed to document the effects of the swaging technology on the development of substructure and characteristic structural features were carried out by scanning electron microscopy (electron backscatter diffraction analyses), and transmission electron microscopy. The results showed that the design of the composite has a favourable effect on decreasing the power losses during alternating current transfer and that the substructure development affected favourably the electric resistance of the conductor. The highest electric resistance was measured for the composite conductor with the diameter of 20 mm (1.8% increase compared to electric resistance during transfer of direct current). This value then decreased to 0.6%, and 0.1% after swaging down to the diameters of 15 mm, and 10 mm; the 10 mm composite featured the finest grains, partially restored structure, and texture randomization compared to the 20 mm and 15 mm composites. Manufacturing of the clad composite via rotary swaging imparted advantageous combinations of both the electric and mechanical properties, as swaging also introduced increased microhardness. Full article
(This article belongs to the Special Issue Semiconductor Nanostructures: Growth, Characterization, and Applications)
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10 pages, 1133 KiB  
Article
Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching
by Ghulam Dastgeer, Amir Muhammad Afzal, Jamal Aziz, Sajjad Hussain, Syed Hassan Abbas Jaffery, Deok-kee Kim, Muhammad Imran and Mohammed Ali Assiri
Materials 2021, 14(24), 7535; https://doi.org/10.3390/ma14247535 - 8 Dec 2021
Cited by 25 | Viewed by 3730
Abstract
Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because [...] Read more.
Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes. Full article
(This article belongs to the Special Issue Semiconductor Nanostructures: Growth, Characterization, and Applications)
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9 pages, 1241 KiB  
Article
The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting
by Ye Yuan, Yufang Xie, Ning Yuan, Mao Wang, René Heller, Ulrich Kentsch, Tianrui Zhai and Xiaolei Wang
Materials 2021, 14(15), 4138; https://doi.org/10.3390/ma14154138 - 25 Jul 2021
Viewed by 1558
Abstract
One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and [...] Read more.
One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms. Full article
(This article belongs to the Special Issue Semiconductor Nanostructures: Growth, Characterization, and Applications)
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