Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
5.2
3.0
Journals
Micromachines
Special Issues
III-Nitride Materials in Electronic and Photonic Devices
share announcement

III-Nitride Materials in Electronic and Photonic Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: 31 December 2024 | Viewed by 3270

Special Issue Editors

Prof. Dr. Chun-Hsiung Lin

E-Mail Website
Guest Editor
International College of Semiconductor Technology, National Chiao Tung University, Hsinchu City 30010, Taiwan
Interests: advanced III–V compound semiconductor and Si CMOS devices; compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based, and GaN); semiconductor process technology of advanced 3D Si CMOS devices (e.g., FinFET)
Prof. Dr. Pei-Hsun Wang

E-Mail Website
Guest Editor
Department of Optics and Photonics, National Central University, Taoyuan City 32001, Taiwan
Interests: silicon photonics; semiconductor fabrication; microresonator; frequency comb; ultrafast optics; process integration
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

III-Nitride materials, such as (Al, In, Ga)N, offer numerous advantages that make them highly valuable for various applications, from electronics to photonics. For electronics, the high electron mobility and wide bandgap of III-nitride materials allow high electron mobility transistors (HEMTs) to operate at much higher frequencies and voltages than conventional transistors. Regarding optical applications, III-nitride materials exhibit high efficiency for light-emitting devices and photodetectors. They have been adapted to lighting technologies such as energy-saving LED lighting and laser diodes for data communication and displays. In addition, with their wide bandgap, III-nitride materials yield low optical loss for integrated waveguides, which can be applied in nonlinear and quantum photonics. By varying the composition and crystal structure, III–V materials also offer a wide range of bandgap energies and other electronic properties that can be tuned. With their unique combination of a wide bandgap, high electron mobility, and thermal stability, III-nitride materials are now indispensable in various cutting-edge technologies, including solid-state lighting, 5G communication, artificial intelligence (AI), power electronics, optoelectronics, photonics, and aerospace applications.

The goal of this Special Issue is to seek innovative solutions that take advantage of unique III-nitride material properties, original designs, and fabrication techniques to push the performance of electronic and photonic devices beyond what is conventionally achievable.

Prof. Dr. Chun-Hsiung Lin
Prof. Dr. Pei-Hsun Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-nitride materials
  • HEMTs
  • CMOS devices
  • light-emitting diodes (LED)
  • optoelectronics
  • biosensors
  • integrated/quantum photonics

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Related Special Issue

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

9 pages, 2809 KiB  
Article
The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications
by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma and Yue Hao
Micromachines 2025, 16(1), 1; https://doi.org/10.3390/mi16010001 - 24 Dec 2024
Abstract
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the [...] Read more.
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the same 200 nm GaN buffer layer with an Fe-doped concentration of 8 × 1017 cm−3. Due to the different thicknesses of the UID-GaN layer, the concentration of Fe trails reaching the two-dimensional electron gas (2DEG) varies. The breakdown voltage (Vbr) increases with the high concentration of Fe-doped in GaN buffer layer. However, the mobility of the low concentration of the Fe-doped tail is higher than that of the high concentration of the Fe-doped tail. Therefore, the effect of different thicknesses of UID-GaN on the DC and radio frequency (RF) performance of the device needs to be verified. It provides a reference to the epitaxial design for high-performance GaN HEMTs. Full article
(This article belongs to the Special Issue III-Nitride Materials in Electronic and Photonic Devices)
►▼ Show Figures

Figure 1

36 pages, 21470 KiB  
Article
Development of GaN-Based, 6.6 kW, 450 V, Bi-Directional On-Board Charger with Integrated 1 kW, 12 V Auxiliary DC-DC Converter with High Power Density
by Alessandro Reali, Alessio Alemanno, Fabio Ronchi, Carlo Rossi and Corrado Florian
Micromachines 2024, 15(12), 1470; https://doi.org/10.3390/mi15121470 - 2 Dec 2024
Viewed by 934
Abstract
Automotive-grade GaN power switches have recently been made available in the market from a growing number of semiconductor suppliers. The exploitation of this technology enables the development of very efficient power converters operating at much higher switching frequencies with respect to components implemented [...] Read more.
Automotive-grade GaN power switches have recently been made available in the market from a growing number of semiconductor suppliers. The exploitation of this technology enables the development of very efficient power converters operating at much higher switching frequencies with respect to components implemented with silicon power devices. Thus, a new generation of automotive power components with an increased power density is expected to replace silicon-based products in the development of higher-performance electric and hybrid vehicles. 650 V GaN-on-silicon power switches are particularly suitable for the development of 3–7 kW on-board battery chargers (OBCs) for electric cars and motorcycles with a 400 V nominal voltage battery pack. This paper describes the design and implementation of a 6.6 kW OBC for electric vehicles using automotive-grade, 650 V, 25 mΩ, discrete GaN switches. The OBC allows bi-directional power flow, since it is composed of a bridgeless, interleaved, totem-pole PFC AC/DC active front end, followed by a dual active bridge (DAB) DC-DC converter. The OBC can operate from a single-phase 90–264 Vrms AC grid to a 200–450 V high-voltage (HV) battery and also integrates an auxiliary 1 kW DC-DC converter to connect the HV battery to the 12 V battery of the vehicle. The auxiliary DC-DC converter is a center-tapped phase-shifted full-bridge (PSFB) converter with synchronous rectification. At the low-voltage side of the auxiliary converter, 100 V GaN power switches are used. The entire OBC is liquid-cooled. The first prototype of the OBC exhibited a 96% efficiency and 2.2 kW/L power density (including the cooling system) at a 60 °C ambient temperature. Full article
(This article belongs to the Special Issue III-Nitride Materials in Electronic and Photonic Devices)
►▼ Show Figures

Figure 1

11 pages, 2100 KiB  
Article
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate
by Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang and Yue Hao
Micromachines 2024, 15(1), 156; https://doi.org/10.3390/mi15010156 - 20 Jan 2024
Cited by 3 | Viewed by 1730
Abstract
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high [...] Read more.
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 105. The quantum wells of the p-GaN/AlGaN and AlGaN/GaN heterojunctions can trap the holes and electrons excited by the UV illumination, thus efficiently triggering a photovoltaic effect and photoconductive effect, separately. Furthermore, the prepared photodetectors allow flexible adjustment of the static bias point, making it adaptable to different environments. Compared to traditional thin-film semi-transparent Ni/Au gates, indium tin oxide (ITO) exhibits higher transmittance. Under 355 nm illumination, the photodetector exhibited a super-high responsivity exceeding 3.5 × 104 A/W, and it could even exceed 106 A/W under 300 nm illumination. The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future. Full article
(This article belongs to the Special Issue III-Nitride Materials in Electronic and Photonic Devices)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop