Search Results (106)

Direct-writing submicron copper circuits on glass with laser precision—without lithography, vacuum deposition, or etching—represents a transformative step in next-generation microfabrication. We present a high-resolution, maskless method for metallizing glass using ultrashort pulse Bessel beam laser processing, followed by silver ion activation and electroless copper plating. The laser-modified glass surface hosts nanoscale chemical defects that promote the in situ reduction of Ag⁺ to metallic Ag⁰ upon exposure to AgNO₃ solution. These silver seeds act as robust catalytic and adhesion sites for subsequent copper growth. Using this approach, we demonstrate circuit traces as narrow as 0.7 µm, featuring excellent uniformity and adhesion. Compared to conventional redistribution-layer (RDL) and under-bump-metallization (UBM) techniques, this process eliminates multiple lithographic and vacuum-based steps, significantly reducing process complexity and production time. The method is scalable and adaptable for applications in transparent electronics, fan-out packaging, and high-density interconnects. Full article

This study investigates the impact of etching trimming parameters on the multiple harmonics of the mass distribution in hemispherical resonators and proposes a novel 1st harmonic trimming scheme. As mass balancing technology advances, the extension of identification and trimming from frequency split to multiple harmonics remains a challenge. Initially, a multi-harmonic identification scheme based on spurious mode detection was established, considering the influence of the first three harmonics of the mass distribution on the dynamic characteristics of hemispherical resonators. Finite element method modeling and analysis revealed that common structural geometric errors significantly introduce the 1st harmonic. By integrating a rectangular pulse function into the mass distribution function to simulate etching grooves, spectral analysis revealed that groove depth and width determine the amplitude and gradient of introduced harmonics. This research introduces an innovative discrete trimming scheme aimed at addressing the frequency split and mode mismatch issues associated with traditional single-point trimming of the 1st harmonic. By decomposing the trimming task into primary and auxiliary etching grooves, the 4th harmonic introduced by the primary etching is compensated by the secondary 4th harmonic introduced by the auxiliary etching, achieving decoupling of the 1st harmonic from frequency split during the trimming process. The scheme was verified through finite element simulations and experimental testing. Results demonstrate that, for a similar reduction in the 1st harmonic, the variation in frequency split during the discrete trimming process is only 11% of that observed in single-point trimming, facilitating efficient and low-damage trimming of the 1st harmonic. Full article

We propose a simple and innovative configuration consisting of a quantum dot and micro-optical resonator that emits single photons with good directionality in a plane parallel to the substrate. In this device, a single quantum dot is placed as a light source between the slits of a triangular split-ring micro-optical resonator (SRR) supported in an optical polymer film with an air-bridge structure. Although most of the previous single photon emitters in solid-state devices emitted photons upward from the substrate, operation simulations confirmed that this configuration realizes lateral light emission in narrow regions above, below, left, and right in the optical polymer film, despite the absence of a light confinement structure such as an optical waveguide. This device can be fabricated using silica-coated colloidal quantum dots, focused ion beam (FIB) lithography, and wet etching using an oxide layer on a silicon substrate as a sacrificial layer. The device has a large tolerance to the variation in the position of the SRR in the optical polymer film and the height of the air-bridge. We confirmed that Pt-SRRs can be formed on the optical polymer film using FIB lithography. This simple lateral photon emitter is suitable for coupling with optical fibers and for fabricating planar optical quantum solid-state circuits, and is useful for the development of quantum information processing technology. Full article

Monolithic micro LED display arrays show potential for application in small-area display modules, such as augmented reality (AR) displays. Due to the short distance between micro LEDs and the monolithic transparent substrate, a light crosstalk phenomenon exists between adjacent micro LED pixels, decreasing the array’s display definition. In this paper, a 64 × 64 GaN micro LED monolithic display array was fabricated on a silicon-based drive circuit. The micro LED size was 20 μm × 20 μm, and the pitch between micro LEDs was 28 μm. To suppress the optical crosstalk between adjacent micro LEDs in the array, we etched a photonic crystal structure using a focused ion beam (FIB) on the micro LED sapphire substrate. Measurements of the micro LED nearfield electroluminescence (EL) and finite element method (FEM) calculations demonstrated that the light expansion was confined in the photonic crystal micro LED with a thinner substrate. The presented work provides references regarding the fabrication of monolithic micro LED arrays and the control of crosstalk in displays. Full article

The adhesion between metals and polymers plays a pivotal role in numerous industrial applications, especially within the automotive and aerospace sectors, where there is a growing demand for materials that are both lightweight and durable. This study introduces an innovative technique to improve the adhesion between a metal and a polymer in hybrid structures through the synergistic use of anodization and plasma treatment. By forming a nanoporous oxide layer on aluminum surfaces, anodization enhances the interface for polymer binding. Plasma treatment further augments the surface properties by increasing the concentration of functional groups, thus allowing better polymer infiltration during the 3D printing process. Comprehensive analyses, including X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, and contact angle measurements confirm the substantial enhancement in the bonding strength achieved through this method. Additionally, cross-sectional analysis via focused ion-beam etching provides a detailed view of polymer integration into the treated layers. The findings suggest significant potential for these surface modification strategies to advance the development of lightweight, robust composites suitable for use in sectors such as automotive, aerospace, and consumer electronics. Full article

Silicon nanowires (SiNWs) have garnered considerable attention in the last few decades owing to their versatile applications. One extremely desirable aspect of fabricating SiNWs is controlling their dimensions and alignment. In addition, strict control of surface roughness or diameter modulation is another key parameter for enhanced performance in applications such as photovoltaics, thermoelectric devices, etc. This study investigates a method of fabricating silicon nanowires using electron beam lithography (EBL) and the deep reactive ion etching (DRIE) Bosch process to achieve precisely controlled fabrication. The fabricated nanowires had a pitch error within 2% of the pitch of the direct writing mask. The maximum error in the average diameter was close to 25%. The simplified two-step method with tight control of the dimensions and surface tunability presents a reliable technique to fabricate vertically aligned SiNWs for some targeted applications. Full article

In recent years, the field of micro- and nanochannel fabrication has seen significant advancements driven by the need for precision in biomedical, environmental, and industrial applications. This review provides a comprehensive analysis of emerging fabrication technologies, including photolithography, soft lithography, 3D printing, electron-beam lithography (EBL), wet/dry etching, injection molding, focused ion beam (FIB) milling, laser micromachining, and micro-milling. Each of these methods offers unique advantages in terms of scalability, precision, and cost-effectiveness, enabling the creation of highly customized micro- and nanochannel structures. Challenges related to scalability, resolution, and the high cost of traditional techniques are addressed through innovations such as deep reactive ion etching (DRIE) and multipass micro-milling. This paper also explores the application potential of these technologies in areas such as lab-on-a-chip devices, biomedical diagnostics, and energy-efficient cooling systems. With continued research and technological refinement, these methods are poised to significantly impact the future of microfluidic and nanofluidic systems. Full article

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE—reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs. Full article

The selectivity of the reactive ion etching of silicon using a negative electron resist AR-N 7520 mask was investigated. The selectivity dependencies on the fraction of SF₆ in the feeding gas and bias voltage were obtained. To understand the kinetics of passivation film formation and etching, the type and concentration of neutral particles were evaluated and identified using plasma optical emission spectroscopy. Electron temperature and electron density were measured by the Langmuir probe method to interpret the optical emission spectroscopy data. A high etching selectivity of 8.0 ± 1.8 was obtained for the etching process. The optimum electron beam exposure dose for defining the mask was 8200 pC/m at 30 keV. Full article

The surfaces of ceramic products are replete with numerous defects, such as those that appear during the diamond grinding of sintered SiAlON ceramics. The defective surface layer is the reason for the low effectiveness of TiZrN coatings under abrasive and fretting wear. An obvious solution is the removal of an up to 4-µm-thick surface layer containing the defects. It was proposed in the present study to etch the layer with fast argon atoms. At the atom energy of 5 keV and a 0.5 mA/cm² current density, the ions were converted into fast atoms and the sputtering rate for the SiAlON samples reached 20 μm/h. No defects were observed in the microstructures of coatings deposited after beam treatment for half an hour. The treatment reduced the volumetric abrasive wear by five times. The fretting wear was reduced by three to four times. Full article

Nanogrooves with high aspect ratios possess small size effects and high-precision optical control capabilities, as well as high specific surface area and catalytic performance, demonstrating significant application value in the fields of optics, semiconductor processes, and biosensing. However, existing manufacturing methods face issues such as complexity, high costs, low efficiency, and low precision, especially in the difficulty of fabricating nanogrooves with high resolution on the nanoscale. This study proposes a method based on focused ion beam technology and a layer-by-layer etching process, successfully preparing V-shaped and rectangular nanogrooves on a silicon dioxide substrate. Combining with cellular automaton algorithm, the ion sputtering flux and redeposition model was simulated. By converting three-dimensional grooves to discrete rectangular slices through a continuous etching process and utilizing the sputtering and redeposition effects of gallium ion beams, high-aspect-ratio V-shaped grooves with up to 9.6:1 and rectangular grooves with nearly vertical sidewalls were achieved. In addition, the morphology and composition of the V-shaped groove sidewall were analyzed in detail using transmission electron microscopy (TEM) and tomography techniques. The influence of the etching process parameters (ion current, dwell time, scan times, and pixel overlap ratio) on groove size was analyzed, and the optimized process parameters were obtained. Full article

A streamlined sample preparation method for nanomechanical testing is needed to improve the quality of specimens, reduce the cost, and increase the versatility of specimen fabrication. This work outlines an in-plane liftout focused ion beam (FIB) fabrication procedure to prepare electron-transparent specimens for in situ transmission electron microscopy (TEM) nanomechanical testing. Ion etching and electron backscatter diffraction (EBSD) techniques were used to lift out a [110] oriented grain from a neutron-irradiated bulk X-750 alloy. Careful control of voltages and currents ensured precision. Top surface thinning sweeps prevented resurfacing and redeposition while dog-bone geometries were shaped with a 1:4 gauge width-to-milling pattern diameter ratio. Nanotensile testing in the TEM with a picoindenter allowed for the estimation of an ultimate tensile strength of 2.41 GPa, and inspection revealed a high density of bubbles in the X-750 matrix. The proposed fabrication procedure is significant for preparing samples from radioactive materials, studying complex structures that are orientation-dependent, and analyzing desired planar areas. Full article

The high-efficiency preparation of large-area microstructures of optical materials and precision graphic etching technology is one of the most important application directions in the atomic and near-atomic-scale manufacturing industry. Traditional focused ion beam (FIB) and reactive ion etching (RIE) methods have limitations in precision and efficiency, hindering their application in automated mass production. The pulsed ion beam (PIB) method addresses these issues by enhancing ion beam deflection to achieve high-resolution material removal on a macro scale, which can reach the equivalent removal resolution of 6.4 × 10⁻⁴ nm. Experiments were conducted on a quartz sample (10 × 10 × 1 mm) with a specific pattern mask using the custom PIB processing device. The surface morphology, etching depth, and roughness were measured post-process. The results demonstrated that precise control over cumulative sputtering time yielded well-defined patterns with expected average etching depths and surface roughness. This confirms the PIB technique’s potential for precise atomic depth image transfer and its suitability for industrial automation, offering a significant advancement in microfabrication technology. Full article

In optical communication and sensing, silicon nitride (SiN) photonics plays a crucial role. By adeptly guiding and manipulating light on a silicon-based platform, it facilitates the creation of compact and highly efficient photonic devices. This, in turn, propels advancements in high-speed communication systems and enhances the sensitivity of optical sensors. This study presents a comprehensive exploration wherein we both numerically and experimentally display the efficacy of a SiN-based ring resonator designed for refractive index sensing applications. The device’s sensitivity, numerically estimated at approximately 110 nm/RIU, closely aligns with the experimental value of around 112.5 nm/RIU. The RR sensor’s Q factor and limit of detection (LOD) are 1.7154 × 10⁴ and 7.99 × 10⁻⁴ RIU, respectively. These congruent results underscore the reliability of the two-dimensional finite element method (2D-FEM) as a valuable tool for accurately predicting and assessing the device’s performance before fabrication. Full article

The mechanism of the combined process of ion beam sputtering (IBS) and HF acid etching on the chemical structure defects of fused silica and its laser damage resistance performance were investigated in this paper. During the removal process of surface material, the sputtering effect causes lattice atoms to flee their native space locations, and a large amount of unsaturated chemical structures are produced on the silica surface, which improves the chemical activity of Si and O atoms, accelerates the chemical reaction process between surface atoms and water molecules, increases the content of hydroxyl groups (OH-) in the shallow layer, and enhances the photothermal weak absorption intensity. However, the increase in hydroxyl content weakens the binding strength of silicon–oxygen bonds, destroys the spatial network structure of silica bulk, and reduces its mechanical strength, resulting in a decrease in its laser damage resistance performance. The paper reveals for the first time the mechanism by which IBS changes the structure characteristics of silica material, accelerates the surface hydroxylation process, and thereby reduces the laser damage resistance performance. This work provides technical guidance for effectively suppressing chemical structure defects on silica surfaces and improving the laser damage resistance performance of optical components under high-flux laser irradiation. Full article