Search Results (132)

In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h. The aluminum (Al) top electrode of the RRAM devices was also fabricated using thermal evaporator deposition. Additionally, the electrical properties of the SiC thin film RRAM devices were determined using a B2902A mechanism. The current–voltage (I–V) curves of the as-deposited SiC thin films at 50 and 75 W power levels were measured and analyzed. Specifically, the set and reset voltages for the RRAM devices deposited at 50 and 75 W were approximately 1.2 and −1.5 V, respectively. For the annealed samples, the memory windows of the 75 W SiC thin film RRAM devices treated at 300 °C were found to be around 10⁵. Full article

As the CMOS technology approaches its physical and economic limits, further advancement of Moore’s Law for enhanced computing performance can no longer rely solely on smaller transistors and higher integration density. Instead, the computing landscape is poised for a fundamental transformation that transcends hardware scaling to embrace innovations in architecture, software, application-specific algorithms, and cross-disciplinary integration. Among the most promising enablers of this transition is non-volatile memory (NVM), which provides new technological pathways for restructuring the future of computing systems. Recent advancements in non-volatile memory (NVM) technologies, such as flash memory, Resistive Random-Access Memory (RRAM), and magneto-resistive RAM (MRAM), have significantly narrowed longstanding performance gaps while introducing transformative capabilities, including instant-on functionality, ultra-low standby power, and persistent data retention. These characteristics pave the way for developing more energy-efficient computing systems, heterogeneous memory hierarchies, and novel computational paradigms, such as in-memory and neuromorphic computing. Beyond isolated hardware improvements, integrating NVM at both the architectural and algorithmic levels would foster the emergence of intelligent computing platforms that transcend the limitations of traditional von Neumann architectures and device scaling. Driven by these advances, next-generation computing platforms powered by NVM are expected to deliver substantial gains in computational performance, energy efficiency, and scalability of the emerging data-centric architectures. These improvements align with the broader vision of both “More Moore” and “More than Moore”—extending beyond MOS device miniaturization to encompass architectural and functional innovation that redefines how performance is achieved at the end of CMOS device downsizing. Full article

Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, it is beneficial that the applied materials would have to be compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. Fabricating methods of these materials can determine their stoichiometry and structural composition, which can have a detrimental impact on the electrical performance of manufactured devices. In this study, we present the influence of the Ar/N₂ ratio during reactive magnetron sputtering of titanium nitride (TiN) electrodes on the resistive switching behavior of MIM devices. We used silicon oxide (SiOx) as a dielectric layer, which was characterized by the same properties in all fabricated MIM structures. The composition of TiN thin layers was controlled by tuning the Ar/N₂ ratio during the deposition process. The fabricated conductive materials were characterized in terms of chemical and structural properties employing X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. Structural characterization revealed that increasing the Ar content during the reactive sputtering process affects the crystallite size of the deposited TiN layer. The resulting crystallite sizes ranged from 8 Å to 757.4 Å. The I-V measurements of fabricated devices revealed that tuning the Ar/N₂ ratio during the deposition of TiN electrodes affects the RS behavior. Our work shows the importance of controlling the stoichiometry and structural parameters of electrodes on resistive switching phenomena. Full article

In this study, tin oxide (SnO₂) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal–insulator–metal (MIM) structures. The fabrication process began with the deposition of a silicon dioxide (SiO₂) layer onto a silicon (Si) substrate, followed by the deposition of a titanium nitride (TiN) layer to serve as the bottom electrode. Subsequently, the tin oxide (SnO₂) layer was deposited as the resistive switching insulator. Two types of top electrodes were developed to investigate the influence of different oxygen concentrations on the bipolar switching, electrical characteristics, and performance of memory devices. An aluminum (Al) top electrode was deposited using thermal evaporation, while a platinum (Pt) top electrode was deposited via dc sputtering. As a result, two distinct metal–insulator–metal (MIM) memory RRAM device structures were formed, i.e., Al/SnO₂/TiN/SiO₂/Si and Pt/SnO₂/TiN/SiO₂/Si. In addition, the symmetry bipolar switching characteristics, electrical conduction mechanism, and oxygen concentration factor of the tin oxide-based memory devices using rapid thermal annealing and different top electrodes were determined and investigated by ohmic, space-charge-limit-current, Schottky, and Poole–Frenkel conduction equations in this study. Full article

Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO₃-Ag RRAM device featuring 2D α-MoO₃ as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>10⁶), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO₃-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>10⁴ s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. Full article

This work investigates the impact of reset pulse width on multilevel conductance programming in Al₂O₃/TiO_x-based resistive random access memory. A 32 × 32 cross-point array of Ti (12 nm)/Pt (62 nm)/Al₂O₃ (3 nm)/TiO_x (32 nm)/Ti (14 nm)/Pt (60 nm) devices (2.5 µm × 2.5 µm active area) was fabricated via e-beam evaporation, atomic layer deposition, and reactive sputtering. Following an initial forming step and a stabilization phase of five DC reset–set cycles, devices were programmed using an incremental step pulse programming (ISPP) scheme. Reset pulses of fixed amplitude were applied with widths of 100 µs, 10 µs, 1 µs, and 100 ns, and the programming sequence was terminated when the read current at 0.2 V exceeded a 45 µA target. At a 100 µs reset pulse width, most cycles exhibited abrupt current jumps that exceeded the target current, whereas at a 100 ns width, the programmed current increased gradually in all cycles, enabling precise conductance tuning. Cycle-to-cycle variation decreased by more than 50% as the reset pulse width was reduced, indicating more uniform filament disruption and regrowth. These findings demonstrate that controlling reset pulse width offers a straightforward route to reliable, linear multilevel operation in Al₂O₃/TiO_x-based RRAM. Full article

Resistive random-access memory (RRAM) has been attractive as an emerging memory that can be used for computing-in-memory (CIM) and storage-class memory (SCM). However, achieving gradual resistive switching (RS) characteristics and minimizing the variability remain critical challenges. In this work, we investigate the wake-up effect in Al₂O₃-based RRAM and its role in improving RS properties. Two types of wake-up effects were found: HRS variation improvement and gradual switching during set operation. First, a reduction in current variation in the high-resistance state (HRS), which indicates improvement of filament stability and uniformity. Second, gradual switching during the set voltage sweep, suggesting a more gradual modulation of the conduction mechanism, likely related to interface conductive filament (CF) generation. By harnessing the wake-up effect, it is possible to overcome the limitations of RRAM, which allows writing only during the reset voltage sweep, to enable writing during the set voltage sweep as well. Full article

In this study, the bipolar resistance switching behavior and electrical conduction transport properties of a neodymium oxide film’s resistive random access memory (RRAM) devices for using different top electrode materials were observed and discussed. Different related electrical properties and transport mechanisms are important factors in applications in a film’s RRAM devices. For aluminum top electrode materials, the electrical conduction mechanism of the neodymium oxide film’s RRAM devices all exhibited hopping conduction behavior, with 1 mA and 10 mA compliance currents in the set state for low/high voltages applied. For TiN and ITO (Indium tin oxide) top electrode materials, the conduction mechanisms all exhibited ohmic conduction for the low voltage applied, and all exhibited hopping conduction behavior for the high voltage applied. In addition, the electrical field strength simulation resulted in an increase in the reset voltage, indicating that oxygen ions have diffused into the vicinity of the ITO electrode during the set operation. This was particularly the case in the three physical models proposed, and based on the relationship between different ITO electrode thicknesses and the oxygen ion concentration distribution effect of the neodymium oxide film’s RRAM devices, they were investigated and discussed. To prove the oxygen concentration distribution expands over the area of the ITO electrode, the simulation software was used to analyze and simulate the distribution of the electric field for the Poisson equation. Finally, the neodymium oxide film’s RRAM devices for using different top electrode materials all exhibited high memory window properties, bipolar resistance switching characteristics, and non-volatile properties for incorporation into next-generation non-volatile memory device applications in this study. Full article

The rapid advancement of artificial intelligence (AI) technologies has significantly increased the demand for high-performance computational hardware. Memristor-based compute-in-memory (CIM) technology, also known as resistive random-access memory (RRAM)-based CIM technology, shows great potential for addressing the data transfer bottleneck and supporting high-performance computing (HPC). In this paper, a multi-scale thermal model is developed to evaluate the temperature distribution in RRAM-based CIM chips and the influence of various factors on thermal behavior. The results indicate that hotspot temperatures can be mitigated by reducing the epoxy molding compound (EMC) thickness, increasing the substrate thickness, and lowering boundary thermal resistance. Moreover, optimizing the layout of analog computing circuits and digital circuits can reduce the maximum temperature by up to 4.04 °C. Furthermore, the impact of temperature on the conductance of RRAM devices and the inference accuracy of RRAM-based CIM chips is analyzed. Simulation results reveal that thermal-induced accuracy loss in CIM chips is significant, but the computation correction method effectively reduces the accuracy loss from 66.4% to 1.4% at 85 °C. Full article

In the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial intelligence and Internet of Things. Perovskite-type rare-earth metal oxides are common functional materials and considered promising candidates for RRAM devices because their interesting electronic properties depend on the interaction between oxygen ions, transition metals, and rare-earth metals. LaCoO₃, NdCoO₃, and SmCoO₃ are typical rare-earth cobaltates (RCoO₃). These perovskite materials were fabricated by electrospinning and the calcination method. The aim of this study was to investigate the resistive switching effect in the RCoO₃ structure. The oxygen vacancies in RCoO₃ are helpful to form conductive filaments, which dominates the resistance transition mechanism of Pt/RCoO₃/Pt. The electronic properties of RCoO₃ were investigated, including the barrier height and the shape of the conductive filaments. This study confirmed the potential application of LaCoO₃, NdCoO₃, and SmCoO₃ in memory storage devices. Full article

Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al’s and Au’s top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the Al₂O₃ film on the on/off window and voltage characteristics of the device were investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of AlN films, respectively. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and switching ratio. Full article

In this study, Y₂O₃-based resistive random-access memory (RRAM) devices with a mono-ethanolamine (MEA) stabilizer fabricated using the sol–gel process on indium tin oxide/glass substrates were investigated. The effects of MEA content on the structural, optical, chemical, and electrical characteristics were determined. As the MEA content increased, film thickness and crystallite size decreased. In particular, the increase in MEA content slightly decreased the oxygen vacancy concentration. The decreased film thickness decreased the physical distance for conductive filament formation, generating a strong electric field. However, owing to the lowest oxygen vacancy concentration, a large electrical field is required. To ensure data reliability, the endurance cycles across several devices were measured and presented statistically. Additionally, endurance performance improved with the increase in MEA content. Reduced oxygen vacancy concentration can successfully suppress the excess formation of the Ag conductive filament. This simplifies the transition from the high- to the low-resistance state and vice versa, thereby improving the endurance cycles of the RRAM devices. Full article

In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of −1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of −0.45 V/+1.55 V presented a memory window larger than 10³, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated. Full article

Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck. Recently, due to their unique optoelectronic properties, solution processability, fast switching speeds, and low operating voltages, quantum dots (QDs) have drawn substantial research attention as candidate materials for memristors and artificial synapses. This review covers recent advancements in QD-based resistive random-access memory (RRAM) for resistive memory devices and artificial synapses. Following a brief introduction to QDs, the fundamental principles of the switching mechanism in RRAM are introduced. Then, the RRAM materials, synthesis techniques, and device performance are summarized for a relative comparison of RRAM materials. Finally, we introduce QD-based RRAM and discuss the challenges associated with its implementation in memristors and artificial synapses. Full article

In this study, we investigate the impact of O₂ plasma treatment on the performance of Al/TaO_X/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O₂-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O₂-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current–voltage (I–V) curve fitting. In addition, paired-pulse facilitation (PPF) is observed using partial short-term memory. Furthermore, 3- and 4-bit weight tuning with auto-pulse-tuning algorithms was achieved to improve the controllability of the synapse weight for the neuromorphic system, maintaining retention times exceeding 10³ s in the multiple states. Neuromorphic simulation with an MNIST dataset is conducted to evaluate the synaptic device. Full article