Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria
Peter Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, 12489 Berlin, Germany
Author to whom correspondence should be addressed.
Received: 27 June 2017 / Revised: 27 June 2017 / Accepted: 11 July 2017 / Published: 17 July 2017
Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin–orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture that is believed to play a central role in the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Here, we provide a generalized
+Boltzmann approach for the description of ultrafast dynamics in topological insulators driven by electron–electron and electron–phonon scatterings. Taking the prototypical insulator Bi
as an example, we test the robustness of our approach by comparing the theoretical prediction to results of time- and angle-resolved photoemission experiments. From this comparison, we are able to demonstrate the crucial role of the excited spin texture in the subpicosecond relaxation of transient electrons, as well as to accurately obtain the magnitude and strength of electron–electron and electron–phonon couplings. Our approach could be used as a generalized theory for three-dimensional topological insulators in the bulk-conducting transport regime, paving the way for the realization of a unified theory of ultrafast dynamics in topological materials.
This is an open access article distributed under the Creative Commons Attribution License
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
Share & Cite This Article
MDPI and ACS Style
Battiato, M.; Aguilera, I.; Sánchez-Barriga, J. Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators. Materials 2017, 10, 810.
Battiato M, Aguilera I, Sánchez-Barriga J. Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators. Materials. 2017; 10(7):810.
Battiato, Marco; Aguilera, Irene; Sánchez-Barriga, Jaime. 2017. "Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators." Materials 10, no. 7: 810.
Show more citation formats
Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.
[Return to top]
For more information on the journal statistics, click here
Multiple requests from the same IP address are counted as one view.