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Journal: Micromachines, 2018
Volume: 9
Number: 658

Article: Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
Authors: by Huolin Huang, Feiyu Li, Zhonghao Sun and Yaqing Cao
Link: https://www.mdpi.com/2072-666X/9/12/658

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