Compact Trap-Assisted-Tunneling Model for Line Tunneling Field-Effect-Transistor Devices
Round 1
Reviewer 1 Report
Please, find the comments attached
Comments for author File: 
Comments.pdf
Author Response
Please find three attached files.
One is the revised manuscript, another is the answer to Reviewers' comments, and the other is the figures.
Sincerely,
Yun Seop Yu
Author Response File: Author Response.pdf
Reviewer 2 Report
The authors reported here a numerical model for understanding the effect of trap state in degradation of subthreshold voltage in line tunneling field effect transistor (TFET). The developed model incorporate the materials dependent fundamental parameters, such as crystal lattice relaxation energy, Huang-Rhys factor, electro-optical frequency etc., which are important for in depth understanding the transistor devices characteristics and direction for future improvement. Although the model fails in exact fitting with experimental data, its scientific soundness is not affected and other factor like electrostatic degradation and contact resistance are analyzed for accuracy improvement. Overall, the manuscript is well organized and written. Some minor suggestions are listed below for revision:
First, please justify why Gaussian distribution function is adopted for the potential profile.
Second, since the model is developed for line TFET, please discuss the transferrability of model to other structure scenarios like 2D TFET, and what should be considered in model revision to apply for other structures?
Author Response
Please find three attached files.
One is the revised manuscript, another is the answer to Reviewers' comments, and the other is the figures.
Sincerely,
Yun Seop Yu
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
Please, find comments attached
Comments for author File: Comments.pdf
Author Response
Please find a attached file.
Author Response File: Author Response.pdf
