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Keywords = ZrO2 dielectric

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11 pages, 4951 KiB  
Article
Improvement in the Polarization Fatigue Properties of PbZr0.50Ti0.50O3 Thick Film Using a Ba0.3Sr0.7Zr0.18Ti0.82O3 Buffer Layer
by Kefan Wu, Junxi Zhang, Zhiyang Fan and Ping Yu
Coatings 2025, 15(5), 568; https://doi.org/10.3390/coatings15050568 - 9 May 2025
Viewed by 271
Abstract
The polarization fatigue of PbZr1−xTixO3 (PZT) films is one of the most serious failure issues in their practical application. In the present work, Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) was used as an [...] Read more.
The polarization fatigue of PbZr1−xTixO3 (PZT) films is one of the most serious failure issues in their practical application. In the present work, Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) was used as an inserting layer to improve the polarization fatigue of PbZr0.50Ti0.50O3 thick film. PZT thick films and BSZT layers were deposited via magnetron sputtering technology. The effects of BSZT layer on the dielectric response, remanent polarization, and fatigue resistance of PZT thick films were investigated experimentally. The results showed that the dielectric constant increased from 457 to 880 (1 MHz), and the reversible/irreversible Rayleigh coefficients were also enhanced. The remanent polarization Pr of the PZT thick films increased from 37 μC/cm2 to 42.4 μC/cm2. After a 1.08 × 109 cycles polarization fatigue test, the ferroelectric polarization loss was 9% for the PZT thick film at 368 kV/cm. The reversible/irreversible Rayleigh coefficients had a very small decline, of only 5% and 2%, respectively. This demonstrates that, different from the previously reported buffer layers, BSZT buffer layers can simultaneously enhance the dielectric and ferroelectric properties and improve the polarization fatigue of PZT thick films. Full article
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15 pages, 5870 KiB  
Article
High Dielectric Tunability and Figure of Merit at Low Voltage in (001)-Oriented Epitaxial Tetragonal Pb0.52Zr0.48TiO3 Thin Films
by Hongwang Li, Chao Liu and Jun Ouyang
Nanomaterials 2025, 15(9), 695; https://doi.org/10.3390/nano15090695 - 5 May 2025
Viewed by 297
Abstract
Ferroelectric thin films with a high dielectric tunability (η) have great potential in electrically tunable applications, including microwave tunable devices such as phase shifters, filters, delay lines, etc. Using a modified Landau–Devonshire type thermodynamic potential, we show that the dielectric tunability [...] Read more.
Ferroelectric thin films with a high dielectric tunability (η) have great potential in electrically tunable applications, including microwave tunable devices such as phase shifters, filters, delay lines, etc. Using a modified Landau–Devonshire type thermodynamic potential, we show that the dielectric tunability η of a (001) tetragonal ferroelectric film can be analytically solved. After a survey of materials, a large η value above 60% was predicted to be achievable in a (001)-oriented tetragonal Pb(Zr0.52Ti0.48)O3 (PZT) film. Experimentally, (001)-oriented PZT thin films were prepared on LaNiO3-coated (100) SrTiO3 substrates by using pulsed laser deposition (PLD). These films exhibited good dielectric tunability (η ~ 67.6%) measured at a small electric field E of ~250 kV/cm (corresponding to 5 volts for a 200 nm thick film). It only dropped down to ~54.2% when E was further reduced to 125 kV/cm (2.5 volts for 200 nm film). The measured dielectric tunability η as functions of the applied electric field E and measuring frequency f are discussed for a 500 nm thick PZT film, with the former well described by the theoretical η(E) curves and the latter showing a weak frequency dependence. These observations validate our integrated approach rooted in a theoretical understanding. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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26 pages, 7832 KiB  
Article
Properties of Bilayer Zr- and Sm-Oxide Gate Dielectric on 4H-SiC Substrate Under Varying Nitrogen and Oxygen Concentrations
by Ahmad Hafiz Jafarul Tarek, Tahsin Ahmed Mozaffor Onik, Chin Wei Lai, Bushroa Abdul Razak, Chia Ching Kee and Yew Hoong Wong
Ceramics 2025, 8(2), 49; https://doi.org/10.3390/ceramics8020049 - 2 May 2025
Viewed by 431
Abstract
This work systematically analyses the electrical and structural properties of a bilayer gate dielectric composed of Sm2O3 and ZrO2 on a 4H-SiC substrate. The bilayer thin film was fabricated using a sputtering process, followed by a dry oxidation step [...] Read more.
This work systematically analyses the electrical and structural properties of a bilayer gate dielectric composed of Sm2O3 and ZrO2 on a 4H-SiC substrate. The bilayer thin film was fabricated using a sputtering process, followed by a dry oxidation step with an adjusted oxygen-to-nitrogen (O2:N2) gas concentration ratio. XRD analysis validated formation of an amorphous structure with a monoclinic phase for both Sm2O3 and ZrO2 dielectric thin films. High-resolution transmission emission (HRTEM) analysis verified the cross-section of fabricated stacking layers, confirmed physical oxide thickness around 12.08–13.35 nm, and validated the amorphous structure. Meanwhile, XPS confirmed the presence of more stoichiometric dielectric oxide formation for oxidized/nitrided O2:N2-incorporated samples, and more sub-stochiometric thin films for samples only oxidized in ambient O2. The oxidation/nitridation processes with N2 incorporation influenced the band offsets and revealed conduction band offsets (CBOs) ranging from 2.24 to 2.79 eV. The affected charge movement and influenced electrical performance where optimized samples with gas concentration ratio of 90% O2:10% N2 achieved the highest electrical breakdown field of 10.1 MV cm−1 at a leakage current density of 10−6 A cm−2. This gate stack also improved key parameters such as the effective dielectric constant (keff) up to 29.75, effective oxide charge (Qeff), average interface trap density (Dit), and slow trap density (STD). The bilayer gate stack of Sm2O3 and ZrO2 revealed potential attractive characteristics as a candidate for high-k gate dielectric applications in metal-oxide-semiconductor (MOS)-based devices. Full article
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9 pages, 2242 KiB  
Communication
Stability Improvement of Solution-Processed Metal Oxide Thin-Film Transistors Using Fluorine-Doped Zirconium Oxide Dielectric
by Haoxuan Xu, Bo Deng and Xinan Zhang
Materials 2025, 18(9), 1980; https://doi.org/10.3390/ma18091980 - 27 Apr 2025
Viewed by 347
Abstract
Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO2) dielectric layers using a chemical solution method to construct TFTs. The [...] Read more.
Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO2) dielectric layers using a chemical solution method to construct TFTs. The characterization by X-ray photoelectron spectroscopy (XPS) revealed that appropriate fluoride doping significantly reduces oxygen vacancies and the concentration of hydroxyl groups, thereby suppressing polarization processes. Subsequently, the electrical properties of Al/F:ZrO2/n++Si capacitors were evaluated, demonstrating that the optimized 10% F:ZrO2 dielectric exhibits a low leakage current density and stable capacitance across a wide frequency range. Indium zinc oxide (IZO) TFTs incorporating 10% F:ZrO2 dielectric layers were then fabricated. These devices displayed reliable electrical characteristics, including high mobility over a broad frequency range, reduced dual-sweep hysteresis, and excellent stability under positive-bias stress (PBS) after three months of aging. These findings indicate that the use of the fluorine-doped ZrO2 dielectric is a versatile strategy for achieving high-performance metal oxide thin-film electronics. Full article
(This article belongs to the Special Issue The Optical, Ferroelectric and Dielectric Properties of Thin Films)
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20 pages, 5396 KiB  
Article
Reducing Sintering Temperature While Optimizing Electrical Properties of BCZT-Based Lead-Free Ceramics by Adding MnO2 as Sintering Aid
by Xinlin Yang, Bijun Fang, Shuai Zhang, Xiaolong Lu and Jianning Ding
Materials 2025, 18(8), 1888; https://doi.org/10.3390/ma18081888 - 21 Apr 2025
Viewed by 290
Abstract
In order to reduce the sintering temperature, MnO2 was used as a sintering aid to prepare [(Ba0.85Ca0.15)0.999(Dy0.5Tb0.5)0.001](Zr0.1Ti0.9)O3-x mol% MnO2 (BCDTZT-x mol% MnO2 [...] Read more.
In order to reduce the sintering temperature, MnO2 was used as a sintering aid to prepare [(Ba0.85Ca0.15)0.999(Dy0.5Tb0.5)0.001](Zr0.1Ti0.9)O3-x mol% MnO2 (BCDTZT-x mol% MnO2, x = 0.05, 0.2, 0.4, 0.6, 0.8, 1, 1.5, 3) lead-free piezoelectric ceramics in which the effects of the MnO2 doping amount and sintering temperature on the phase structure, sintering behavior, and electrical properties of the BCDTZT-x mol% MnO2 ceramics were systematically analyzed. All ceramics have a single perovskite structure and coexist in multiple phases. The optimal sintering temperature was reduced from 1515 °C to 1425 °C, and the density of all ceramics was increased as compared with the undoped ceramic, reaching a maximum of 5.38 g/cm3 at x = 0.8 mol%. An appropriate MnO2 doping amount of 0.4 mol% could effectively suppress oxygen vacancies and improve electrical properties, resulting in the best comprehensive performance of the ceramics, with a dielectric constant maximum of 12,817, a high piezoelectric constant of 330 pC/N, and good strain value (Smax = 0.118%) and low strain hysteresis (Hys = 2.66%). The calculation of activation energy indicated that the high-temperature conductivity was dominated by oxygen vacancies in all ceramics. The results showed that the appropriate introduction of MnO2 as a sintering aid could improve the performance of BCZT-based ceramics while reducing the sintering temperature, presenting high practical application value in the fields of low electric field sensors and actuators. Full article
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16 pages, 16053 KiB  
Article
Technology and Electrophysical Properties of PZT-Type Ceramics Doped by Samarium
by Dariusz Bochenek, Dagmara Brzezińska, Przemysław Niemiec, Maciej Zubko and Katarzyna Osińska
Materials 2025, 18(8), 1773; https://doi.org/10.3390/ma18081773 - 13 Apr 2025
Viewed by 305
Abstract
In this work, a multicomponent PZT-type material doped with manganese Mn, antimony Sb, samarium Sm, and tungsten W was fabricated using classical powder technology. Sintering of the ceramic samples was performed by the free sintering method (pressureless sintering). The influence of samarium on [...] Read more.
In this work, a multicomponent PZT-type material doped with manganese Mn, antimony Sb, samarium Sm, and tungsten W was fabricated using classical powder technology. Sintering of the ceramic samples was performed by the free sintering method (pressureless sintering). The influence of samarium on the properties of PZT was analyzed using a variable amount of samarium Sm3+ (from 0.8 to 1.2 wt.%) and tungsten W6+ (from 1.4 to 1.2 wt.%) admixture compared to the Pb(Zr0.49Ti0.51)0.963Mn0.021Sb0.016O3 + W6+1.8 wt.% reference composition. XRD studies have shown that PZT-type ceramic samples have a tetragonal structure with a point group of P4mm. Field emission scanning electron micrographs (FE-SEMs) showed fine and properly crystallized grains with an average grain size of 5.65–7.70 μm and clearly visible grain boundaries. The polarization–electric field (P-E) hysteresis measurement confirmed the ferroelectric nature of the ceramic materials with high Pm maximum polarization values (from 12.38 to 16.46 μC/cm2). Dielectric studies of PZT-type materials have revealed high permittivity values (from 1025 to 1365 at room temperature (RT) and from 18,468 to 25,390 at phase transition temperature Tm) with simultaneously low tanδ dielectric loss factor values (from 0.004 to 0.011 at RT) and low DC electrical conductivity, which are important parameters for microelectronic applications. The most homogeneous structure and the most favorable set of utility parameters are represented by the composition with an equal content of Sm and W admixtures, i.e., for 1.2 wt.%. Full article
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15 pages, 3554 KiB  
Article
Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors
by Qimin Huang, Yunduo Guo, Anfeng Wang, Zhaopeng Bai, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma and Qingchun Zhang
Materials 2025, 18(8), 1741; https://doi.org/10.3390/ma18081741 - 10 Apr 2025
Viewed by 420
Abstract
The transition of SiC MOSFET structure from planar to trench-based architectures requires the optimization of gate dielectric layers to improve device performance. This study utilizes a range of characterization techniques to explore the interfacial properties of ZrO2 and SiO2/ZrO2 [...] Read more.
The transition of SiC MOSFET structure from planar to trench-based architectures requires the optimization of gate dielectric layers to improve device performance. This study utilizes a range of characterization techniques to explore the interfacial properties of ZrO2 and SiO2/ZrO2 gate dielectric films, grown via atomic layer deposition (ALD) in SiC epitaxial trench structures to assess their performance and suitability for device applications. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements showed the deposition of smooth film morphologies with roughness below 1 nm for both ZrO2 and SiO2/ZrO2 gate dielectrics, while SE measurements revealed comparable physical thicknesses of 40.73 nm for ZrO2 and 41.55 nm for SiO2/ZrO2. X-ray photoelectron spectroscopy (XPS) shows that in SiO2/ZrO2 thin films, the binding energies of Zr 3d5/2 and Zr 3d3/2 peaks shift upward compared to pure ZrO2. Electrical characterization showed an enhancement of EBR (3.76 to 5.78 MV·cm−1) and a decrease of ION_EBR (1.94 to 2.09 × 10−3 A·cm−2) for the SiO2/ZrO2 stacks. Conduction mechanism analysis identified suppressed Schottky emission in the stacked film. This indicates that the incorporation of a thin SiO2 layer effectively mitigates the small bandgap offset, enhances the breakdown electric field, reduces leakage current, and improves device performance. Full article
(This article belongs to the Special Issue Feature Papers in Materials Physics (2nd Edition))
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9 pages, 4795 KiB  
Article
Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH3 Plasma-Optimized Interfaces
by Yi-Ju Yao, Yu-Min Fu, Yu-Hung Chen, Chen-You Wei, Kai-Ting Huang, Guang-Li Luo, Fu-Ju Hou, Yu-Sheng Lai and Yung-Chun Wu
Materials 2025, 18(8), 1740; https://doi.org/10.3390/ma18081740 - 10 Apr 2025
Viewed by 537
Abstract
This paper presents an advanced dielectric engineering approach utilizing a composition-dependent hafnium zirconium oxide (Hf1-xZrxO2) superlattice (SL) structure for Si nanosheet gate-all-around field-effect transistors (Si NSGAAFETs). The dielectric (DE) properties of solid solution (SS) and SL Hf [...] Read more.
This paper presents an advanced dielectric engineering approach utilizing a composition-dependent hafnium zirconium oxide (Hf1-xZrxO2) superlattice (SL) structure for Si nanosheet gate-all-around field-effect transistors (Si NSGAAFETs). The dielectric (DE) properties of solid solution (SS) and SL Hf1-xZrxO2 capacitors were systematically characterized through capacitance-voltage (C-V) and polarization-voltage (P-V) measurements under varying annealing conditions. A high dielectric constant (k-value) of 59 was achieved in SL-Hf0.3Zr0.7O2, leading to a substantial reduction in equivalent oxide thickness (EOT). Furthermore, the SL-Hf0.3Zr0.7O2 dielectric was integrated into Si NSGAAFETs, with the interfacial layer (IL) further optimized via NH3 plasma treatment. The resulting devices exhibited superior electrical performance, including an enhanced ON-OFF current ratio (ION/IOFF) reaching 107, an increased drive current, and significantly reduced gate leakage. These results highlight the potential of SL-Hf0.3Zr0.7O2 as a high-k dielectric solution for overcoming EOT scaling challenges in advanced CMOS technology and enabling further innovation in next-generation logic applications. Full article
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13 pages, 3761 KiB  
Article
Enhancing Energy Density of BaTiO3-Bi(M)O3@SiO2/PVDF Nanocomposites via Filler Component Modulation and Film Structure Design
by Jin Hu and Fangfang Liu
Nanomaterials 2025, 15(8), 569; https://doi.org/10.3390/nano15080569 - 8 Apr 2025
Viewed by 347
Abstract
The low energy density (Ud) of polymeric dielectrics is unfavorable for the integration and miniaturization of electronics, thus limiting their application prospects. Introducing high-εr (dielectric constant) ceramic nanofillers to polymer matrices is the most common strategy to enhance [...] Read more.
The low energy density (Ud) of polymeric dielectrics is unfavorable for the integration and miniaturization of electronics, thus limiting their application prospects. Introducing high-εr (dielectric constant) ceramic nanofillers to polymer matrices is the most common strategy to enhance their εr, and hence their Ud. By comparison, enhancing breakdown strength (Eb) is a more effective strategy to enhance Ud. Herein, 0.6BaTiO3-0.4Bi(Mg0.5Ti0.5)O3 and 0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3 nanofibers coated with SiO2 were utilized as fillers in PVDF-based nanocomposites. The combination of experimental and simulation results suggests that the intrinsic properties of nanofillers are the determining factor of the Eb of polymer-based nanocomposites, and SiO2 coating and film structure design are effective strategies to enhance their Eb, and consequently their Ud. As a result, the sandwich-structured PVDF/6 wt% 0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3@SiO2 nanofiber within PVDF/PVDF nanocomposite films achieved a maximum Ud of 11.1 J/cm3 at an Eb of 458 MV/m, which are 2.15 and 1.40 times those of pristine PVDF, respectively. Full article
(This article belongs to the Special Issue Functional Polymer and Ceramic Nanocomposites)
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15 pages, 4522 KiB  
Article
Dielectric Properties of Composite PZT Films with Distinct Phase-Transition Temperatures via Aerosol Deposition
by Ye-Ji Son, Seung-Wook Kim, Hyo-Min Kim, Hyojung Kim, Baojin Chu and Dae-Yong Jeong
Materials 2025, 18(7), 1427; https://doi.org/10.3390/ma18071427 - 24 Mar 2025
Viewed by 362
Abstract
With the increasing demand for ceramic-based capacitors in energy storage and electronics, ferroelectrics have gained attention due to their high dielectric coefficient. However, near the phase-transition temperature, a significant variation in dielectric coefficient leads to reduced temperature stability and degradation of electrical properties, [...] Read more.
With the increasing demand for ceramic-based capacitors in energy storage and electronics, ferroelectrics have gained attention due to their high dielectric coefficient. However, near the phase-transition temperature, a significant variation in dielectric coefficient leads to reduced temperature stability and degradation of electrical properties, limiting their applications. To address this, composite films with multiple phase-transition temperatures can provide a stable dielectric response over a broad temperature range. Conventional ceramic processing cannot achieve this due to interdiffusion during high-temperature sintering. To overcome this, we utilized the aerosol deposition (AD) process, which enables the fabrication of high-density ceramic films at room temperature while preserving the distinct Curie temperatures (Tc) of different compositions. We prepared composite films with three PZT compositions: Pb(Zr0.2Ti0.8)O3, Pb(Zr0.52Ti0.48)O3, and Pb(Zr0.8Ti0.2)O3. Compared to single-phase Pb(Zr0.52Ti0.48)O3, the composite film exhibited a higher dielectric coefficient with reduced variation across a broad temperature range due to overlapping phase transitions. The AD-fabricated composite PZT films offer enhanced thermal stability, making them suitable for temperature-sensitive applications such as compact power electronics and portable devices. Full article
(This article belongs to the Special Issue Advances in Ferroelectric and Piezoelectric Materials)
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9 pages, 3157 KiB  
Article
Preliminary Study on Syngas Production from a CO2 and CH4 Mixture via Non-Thermal Dielectric Barrier Discharge Plasma Incorporated with Metal–Organic Frameworks
by Naveen Sunder, Yeong Yin Fong and Serene L. S. Mun
J. Compos. Sci. 2025, 9(4), 148; https://doi.org/10.3390/jcs9040148 - 21 Mar 2025
Viewed by 234
Abstract
Dry reforming has gained widespread attention among CO2 utilization approaches, as it is able to convert both CO2 and CH4 into syngas, thus mitigating global warming. Moreover, dielectric barrier discharge (DBD) non-thermal catalytic plasma reactors are potential technologies for CO [...] Read more.
Dry reforming has gained widespread attention among CO2 utilization approaches, as it is able to convert both CO2 and CH4 into syngas, thus mitigating global warming. Moreover, dielectric barrier discharge (DBD) non-thermal catalytic plasma reactors are potential technologies for CO2 and CH4 conversion, due to their low energy consumption and ease of operation. Catalysts also play an important role in ensuring optimal performance. For instance, metal–organic frameworks (MOFs) such as ZIF-8, NH2-UiO-66(Zr), and NH2-MIL-53(Al) are rarely reported in the literature for plasma technologies in dry reforming, despite their strong attributes such as high surface area and charge characteristics. In this work, these MOF catalysts were synthesized and characterized to evaluate their internal morphology, crystallinity, and surface area. Characterization studies showed that ZIF-8, NH2-UiO-66(Zr), and NH2-MIL-53(Al) generally showed similar properties to those results reported in the literature. Additionally, based on DBD catalytic plasma testing, NH2-UiO-66(Zr) with an input power of 30 W recorded the highest H2 and CO yields of 3.20% and 2.34%, respectively, at a CO2:CH4 molar ratio of 7:3. These values could be referred to for future studies on the improvement of MOF catalysts performance in dry reforming under the plasma processes prior to upscaling. Full article
(This article belongs to the Section Composites Applications)
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9 pages, 2407 KiB  
Proceeding Paper
Investigation of Structural, Optical, and Frequency-Dependent Dielectric Properties of Barium Zirconate (BaZrO3) Ceramic Prepared via Wet Chemical Auto-Combustion Technique
by Anitha Gnanasekar, Pavithra Gurusamy and Geetha Deivasigamani
Eng. Proc. 2025, 87(1), 22; https://doi.org/10.3390/engproc2025087022 - 19 Mar 2025
Viewed by 221
Abstract
The wet chemical auto-combustion technique was used to synthesize barium zirconate ceramic (BaZrO3). Many strategies were applied to regulate the functional properties of the perovskite-structured sample which was calcinated at 800 °C for 9 h. A Fourier-transform IR spectrometer, an X-ray [...] Read more.
The wet chemical auto-combustion technique was used to synthesize barium zirconate ceramic (BaZrO3). Many strategies were applied to regulate the functional properties of the perovskite-structured sample which was calcinated at 800 °C for 9 h. A Fourier-transform IR spectrometer, an X-ray diffractometer, a scanning electron microscope (SEM)-EDAX, an LCR meter, and a UV–visible spectrometer were employed to study the structural, morphological, optical, and electrical properties of the prepared barium zirconate sample. Using data derived from XRD, the perovskite phase was confirmed, and the average value of the crystallite size was found to be 17.68 nm. The lattice constant, crystallinity, unit cell volume, tolerance factor, and X-ray density were also calculated. SEM-EDAX confirmed the elemental composition of the product and verified that it contained only the major constituents (Ba, Zr, and O). The vibrational modes of the prepared sample were investigated using FTIR in wavelengths ranging from 400 to 4000 cm−1. Energy bandgap was observed using Tauc’s plot, where a graph was prepared for photon energy (hυ) and (αhυ)2. The powder sample was blended with PVA and made into pellets of 13 mm diameter using a pelletizer to explore dielectric parameters like the dielectric constant, while the loss factor was recorded at a frequency ranging from 100 Hz to 4 MHz at room temperature. With its high dielectric constant and low dielectric loss factor, barium zirconate ceramic stands as an excellent material for several microwave applications. Full article
(This article belongs to the Proceedings of The 5th International Electronic Conference on Applied Sciences)
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12 pages, 4676 KiB  
Article
Enhancement of (100) Orientation and Dielectricity in PZT Thin Films Prepared by Radio Frequency Magnetron Sputtering Method
by Xing Wang and Helin Zou
Coatings 2025, 15(3), 336; https://doi.org/10.3390/coatings15030336 - 14 Mar 2025
Viewed by 512
Abstract
PZT thin films with a sol–gel-derived seed layer of Pb1.2(Zr0.3, Ti0.7)O3 were deposited on Pt/Ti/SiO2/Si substrates via the magnetron sputtering process. The purpose of this present study was to investigate the influence of sputtering [...] Read more.
PZT thin films with a sol–gel-derived seed layer of Pb1.2(Zr0.3, Ti0.7)O3 were deposited on Pt/Ti/SiO2/Si substrates via the magnetron sputtering process. The purpose of this present study was to investigate the influence of sputtering process parameters and heat treatment parameters on the crystal orientation, microstructure, and dielectric behaviors of PZT films. X-ray diffraction (XRD) analysis shows that the (100) orientation degree of the PZT films first increases and then decreases with the increase in oxygen partial pressure during sputtering. The PZT film annealed at a temperature of 550 °C exhibits a pure (100) perovskite phase. There are no significant changes in crystal orientation and the (100) orientation degree with increasing annealing time. An improved surface density, more uniform grains, and clear grain boundaries were detected by scanning electron microscope (SEM) characterization as the annealing time increased to 30 min. Optimal dielectricity was obtained in the film deposited on an O2/Ar composition of 10/90 with a sputtering pressure of 2 Pa and annealed at 600 °C for 30 min, which presents a permittivity of 852 and a loss factor of 0.026 at a frequency of 1 kHz and a remanent polarization of 18.5 μC/cm2. Full article
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16 pages, 4901 KiB  
Article
Thermal Characterization of Ceramic Composites for Optimized Surface Dielectric Barrier Discharge Plasma Actuators
by Kateryna O. Shvydyuk, Frederico F. Rodrigues, João Nunes-Pereira, José C. Páscoa and Abílio P. Silva
Actuators 2025, 14(3), 127; https://doi.org/10.3390/act14030127 - 6 Mar 2025
Viewed by 736
Abstract
Ice accretion is a significant drawback in an aircraft’s and wind turbine’s aerodynamic performance in cold climate weather. Plasma actuators are an attractive technology for ice removal; however, dielectric barriers are typically restricted to borosilicate glass and various polymers, such as Teflon® [...] Read more.
Ice accretion is a significant drawback in an aircraft’s and wind turbine’s aerodynamic performance in cold climate weather. Plasma actuators are an attractive technology for ice removal; however, dielectric barriers are typically restricted to borosilicate glass and various polymers, such as Teflon® and Kapton®. Nevertheless, new materials capable of withstanding prolonged exposure to charged particles are needed. In this work, Y2O3-ZrO2, MgO-CaZrO3, and MgO-Al2O3 ceramic samples were manufactured and their thermal properties as DBD plasma actuators were measured. As foreseen, the results showed that the higher the power consumed, the higher the temperature surface of the plasma actuators. The Y2O3-ZrO2 dielectric showed the highest power consumption and ceiling temperatures (20.7 W and 155 °C at 10 kVpp, respectively), followed by MgO-CaZrO3 (9.6 W and 62 °C at 10 kVpp, respectively) and by MgO-Al2O3 (5.6 W and 47 °C at 10 kVpp, respectively). It was concluded that MgO-Al2O3 presented stable magnitudes across the entire dielectric area, whilst Y2O3-ZrO2 showed a more concentrated temperature field. Therefore, considering that about 65 to 95% of the total power supplied to the DBD plasma actuator is dissipated as heat, it becomes natural to propose ceramic-based DBD plasma actuators as de-/anti-icing means for aero-dynamic structures. Full article
(This article belongs to the Section Aerospace Actuators)
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11 pages, 4533 KiB  
Article
Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO2/TiN Using Nanosecond Laser and Surface Plasma Effect
by Wei Ting Fan, Pheiroijam Pooja and Albert Chin
Nanomaterials 2025, 15(3), 246; https://doi.org/10.3390/nano15030246 - 5 Feb 2025
Viewed by 805
Abstract
Rapid thermal annealing (RTA) has been widely used in semiconductor device processing. However, the rise time of RTA, limited to the millisecond (ms) range, is unsuitable for advanced nanometer-scale electronic devices. Using sub-energy bandgap (EG) 532 nm ultra-fast 15 nanosecond (ns) [...] Read more.
Rapid thermal annealing (RTA) has been widely used in semiconductor device processing. However, the rise time of RTA, limited to the millisecond (ms) range, is unsuitable for advanced nanometer-scale electronic devices. Using sub-energy bandgap (EG) 532 nm ultra-fast 15 nanosecond (ns) pulsed laser annealing, a record-high dielectric constant (high-κ) of 67.8 and a capacitance density of 75 fF/μm2 at −0.2 V were achieved in Ni/ZrO2/TiN capacitors. According to heat source and diffusion equations, the surface temperature of TiN can reach as high as 870 °C at a laser energy density of 16.2 J/cm2, effectively annealing the ZrO2 material. These record-breaking results are enabled by a novel annealing method—the surface plasma effect generated on the TiN metal. This is because the 2.3 eV (532 nm) pulsed laser energy is significantly lower than the 5.0–5.8 eV energy bandgap (EG) of ZrO2, making it unabsorbable by the ZrO2 dielectric. X-ray diffraction analysis reveals that the large κ value and capacitance density are attributed to the enhanced crystallinity of the cubic-phase ZrO2, which is improved through laser annealing. This advancement is critical for monolithic three-dimensional device integration in the backend of advanced integrated circuits. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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