Search Results (84)

This paper presents the design and implementation of an ultra-wideband (UWB) and flat gain low noise amplifier (LNA) using 0.15 µm GaAs pHEMT technology, specifically tailored for applications that benefit from multi-band capability, such as satellite communication. The designed LNA consists of three stages: Two stages are cascoded using source degeneration with a resistor for low noise and high linearity, and the third cascaded stage is utilized for high gain. The designed UWB LNA exhibits a measured gain of 17.4 ± 1 dB between 312 and GHz and a 3 dB bandwidth of 12.4 GHz (1.6–14 GHz). It achieves a noise figure (NF) of 2.5–4.3 dB and an output P1dB of 15 dBm. The chip size is $3\times 1$${\mathrm{mm}}^2$, and it operates without the need for any external components. When compared to LNAs in the literature, the proposed design stands out for its flat gain in the specified frequency band, making the LNA particularly attractive for volume-limited and power-constrained applications. Full article

In advanced Complementary Metal-Oxide-Semiconductor (CMOS) technologies, where diminished feature sizes amplify radiation-induced soft errors, the optimization of fault-tolerant circuit designs requires detailed transistor-level analysis of reliability–performance trade-offs. As a fundamental building block in digital systems and critical data paths, the 2:1 multiplexer, widely used in data-path routing, clock networks, and reconfigurable systems, provides a critical benchmark for assessing radiation-hardened design methodologies. In this context, this work aims to analyze the power consumption, area overhead, and delay of 2:1 multiplexer designs under transient fault conditions, employing the CMOS and Differential Cascode Voltage Switch Logic (DCVSL) logic styles and mitigation strategies. Electrical simulations were conducted using 32 nm high-performance predictive technology, evaluating both the original circuit versions and modified variants incorporating three mitigation strategies: transistor sizing, D-Cells, and C-Elements. Key metrics, including power consumption, delay, area, and radiation robustness, were analyzed. The C-Element and transistor sizing techniques ensure satisfactory robustness for all the circuits analyzed, with a significant impact on delay, power consumption, and area. Although the D-Cell technique alone provides significant improvements, it is not enough to achieve adequate levels of robustness. Full article

This paper presents a 17–38 GHz wideband low-noise amplifier (LNA) designed in a 150-nm GaAs pHEMT process. The proposed amplifier adopts a cascode topology with an interstage inductor between the common-source (CS) and common-gate (CG) stages, and a series inductor at the source node of the CS stage for source degeneration. By incorporating these inductors in the amplification stage, simultaneous noise and input matching is facilitated, while achieving flat gain characteristics over a broad frequency range and ensuring stability. In addition, the amplification stage with inductors achieves input matching using only a shunt component in the DC bias path, without any series matching elements. This approach allows the amplifier to achieve simultaneous noise and input matching (SNIM), ensuring low-noise performance over a wide bandwidth. The simulation results show a flat gain of 20–23 dB and a low noise figure of 1.1–2.1 dB over the 17–38 GHz band. Full article

This paper presents a fully integrated bandpass filter (BPF) with high tunability based on a novel differential active inductor (DAI), designed for sensor interface circuits operating in the ultra-high frequency (UHF) band. The design of the proposed DAI is based on a symmetrical configuration, utilizing a differential amplifier for the feedforward transconductance and a common-source (CS) transistor for the feedback transconductance. By integrating a cascode scheme with a feedback resistor, the quality factor of the active inductor is significantly improved, leading to enhanced mid-band gain for the bandpass filter. To facilitate independent tuning of the BPF‘s center frequency and mid-band gain, an active resistor adjustment and bias voltage control are employed, providing precise control over the filter’s operational parameters. Post-layout simulations and process corner results are conducted with 0.13 µm CMOS technology at 1.2 V supply voltage. The proposed second order BPF achieves a broad tuning range of 280 MHz to 2.426 GHz, with a passband gain between 8.9 dB and 16.54 dB. The design demonstrates a maximum noise figure of 16.54 dB at 280 MHz, an input-referred 1 dB compression point of −3.78 dBm, and a third-order input intercept point (IIP3) of −0.897 dBm. Additionally, the BPF occupies an active area of only 68.2×30 µm², including impedance-matching part, and consumes a DC power of 14–20 mW. The compact size and low power consumption of the design make it highly suitable for integration into modern wireless sensor interfaces where performance and area efficiency are critical. Full article

In this paper, we present a novel enhanced recycling folded cascode (ERFC) operational transconductance amplifier (OTA), which exhibits high efficiency and a fast transient response under weak inversion. Our innovative combination of adaptive biasing with nested local feedback (ABNLF) effectively enhances the input transconductance and slew rate (SR), thus improving the transient response. By incorporating coupling capacitors at the output stage, we achieve a stable operating region with large signal responses. Both the traditional RFC OTA and the proposed ERFC OTA were designed in a 0.18 $\mathsf{\mu }$m CMOS process, operating at a power supply of 1.8 V, with quiescent currents of 8 $\mathsf{\mu }$A and 10.4 $\mathsf{\mu }$A, respectively. Post-layout simulations reveal a remarkable enhancement in the proposed ERFC OTA over the traditional RFC OTA, with the SR and gain–bandwidth (GBW) surging by 120- and 5.95-fold, respectively. This advancement boosts the efficiency of the traditional RFC OTA and provides an impressive figure of merit (FoM) of 130.04 (V/$\mathsf{\mu }$s)·pF/$\mathsf{\mu }$A. Full article

We present in this paper a low-noise, low-power CMOS operational transconductance amplifier designed for the preconditioning stage of implantable neural recording microsystems. The proposed single-stage amplifier utilizes a combination of recently published techniques, including cross-coupled devices in a recycling folded-cascode topology with positive feedback, to achieve high DC voltage gain and unity-gain bandwidth while minimizing power consumption. A mixed N-type and P-type MOSFET input stage enhances input common-mode performance. Designed and implemented in a 0.18-µm CMOS process with a 1.8 V supply, post-layout simulations demonstrate an open-loop voltage gain of 97.23 dB, a 2.91 MHz unity-gain bandwidth (with a 1 pF load), and an input-referred noise of 4.75 μV_rms. The total power dissipation, including bias circuitry, is 5.43 μW, and the amplifier occupies a chip area of 0.0055 mm². Integrated into a conventional neural recording amplifier configuration, the proposed amplifier achieves a simulated input-referred noise of 5.73 µV_rms over a 1 Hz to 10 kHz bandwidth with a power consumption of 5.6 µW. This performance makes it suitable for amplifying both action potential and local field potential signals. The amplifier provides an output voltage swing of 0.976 V_pp with a total harmonic distortion of −62.68 dB at 1 kHz. Full article

The advent of CMOS power amplifiers has enabled compact and cost-effective solutions for RF applications. Among the available options, switching amplifiers are the most competitive due to their superior efficiency. In this paper, we present the design of a fully integrated 130 nm CMOS class-E RF power amplifier optimized for 2.4 GHz ISM band operations that is compliant with the Bluetooth Low Energy (BLE) standard. The amplifier is based on a cascode configuration with charging acceleration capacitance and a combination of standard and high-voltage (HV) MOSFETs, ensuring optimal performance while maintaining device reliability. To identify the best configuration for the proposed circuit, we first provide an overview of basic class-E amplifier operations and critically review optimization techniques proposed in the scientific literature. This review is complemented by a numerical analysis of the potential advantages of using a combined standard-HV MOSFET structure. Post-layout simulations with parasitic parameter extraction demonstrated that the amplifier achieves 40.85% Power Added Efficiency and 20.52 dBm output power. Full article

This paper presents a high-gain multi-input low-noise amplifier (LNA) design aimed at achieving stable phase and minimal noise within a flexible gain range for modern wireless communication systems. The proposed LNA, designed using a CASCODE architecture and implemented in a 65 nm silicon-on-insulator (SOI) process, demonstrates significant improvements in isolation, noise reduction, and miniaturization. The SOI process reduces parasitic capacitance, enhancing performance and thermal/electrical isolation, critical for high-frequency applications. The CASCODE structure minimizes unwanted coupling between stages, enhancing signal integrity and maintaining stable operation across multiple gain modes. The LNA operates in the 2.3 GHz to 2.69 GHz frequency band and supports seven gain modes. It achieves a maximum gain of 21.45 dB with a noise figure of 1.03 dB at the highest gain mode. Notably, it maintains phase stability within 16.4 degrees across the entire gain range, ensuring consistent phase alignment, which is crucial for applications requiring precise signal alignment. The design eliminates the need for switching mechanisms typically used in conventional LNAs, which often introduce additional noise. This work demonstrates that the CASCODE-based multi-input LNA, implemented in a 65 nm SOI process, successfully meets the rigorous demands of high-frequency communication systems, achieving an optimal balance between gain flexibility, noise reduction, and stable phase control within a 32 dB gain range. Full article

A programmable gain amplifier (PGA) is commonly used to optimize the input dynamic range of high-performance systems such as headphones and biomedical sensors. But PGA is rather sensitive to electromagnetic interference (EMI), which limits the precision of these systems. Many capacitor-less low-dropout regulator (LDO) schemes with high power supply rejection have been proposed to act as the independent power supply for PGA, which consumes additional power and area. This paper proposed a PGA with a high power supply rejection ratio (PSRR) and low power consumption, which serves as the analog front-end amplifier in the 20-bit sigma-delta ADC. The PGA is a two-stage amplifier with hybrid compensation. The first stage is the recycling folded cascode amplifier with the gain-boost technique, while the second stage is the class-AB output stage. The PGA was implemented in the 0.18 μm CMOS technology and achieved a 9.44 MHz unity-gain bandwidth (UGBW) and a 57.8° phase margin when driving the capacitor of 5.9 pF. An optimum figure-of-merit (FoM) value of 905.67 has been achieved with the proposed PGA. As the front-end amplifier of a high-precision ADC, it delivers a DC gain of 162.1 dB, the equivalent input noise voltage of 301.6 nV and an offset voltage of 1.61 μV. Within the frequency range below 60 MHz, the measured PSRR of ADC is below −70 dB with an effective number of bits (ENOB), namely 20 bits. Full article

This paper proposes a three-stage op amp based on the SOI (silicon-on-insulator) process, which achieves a low offset voltage and temperature coefficient across a wide temperature range from −40 °C to 250 °C. It can be used in aerospace, oil and gas exploration, automotive electronics, nuclear industry, and in other fields where the ability of electronic devices to withstand high-temperature environments is strongly required. By utilizing a SC (Switched Capacitor) notch filter, the op amp achieves low input offset in a power-efficient manner. The circuit features a multi-path nested Miller compensation structure, consisting of a low-speed channel and a high-speed channel, which switch according to the input signal frequency. The input-stage operational amplifier is a fully differential, rail-to-rail design, utilizing tail current control to reduce the impact of common-mode voltage on the transconductance of the input stage. The two-stage operational amplifier uses both cascode and Miller compensation, minimizing the influence of the feedforward signal path and improving the amplifier’s response speed. The prototype op amp is fabricated in a 0.15 µm SOI process and draws 0.3 mA from a 5 V supply. The circuit occupies a chip area of 0.76 mm². The measured open-loop gain exceeds 140 dB, with a 3 dB bandwidth greater than 100 kHz. The amplifier demonstrates stable performance across a wide temperature range from −40 °C to 250 °C, and exhibits an excellent input offset of approximately 20 µV at room temperature and an offset voltage temperature coefficient of 0.7 μV/°C in the full temperature range. Full article

The coupling capacitor of the MTP cell used in this paper is an NCAP-type capacitor that has only a source contact, and the layout size of the unit cell is 6.184 μm × 6.295 μm (=38.93 μm²), which is 0.44% smaller than the MTP cell that uses the coupling capacitor of the conventional NMOS transistor type that has both a source contact and a drain contact. In addition, a 4 Kb MTP IP with a built-in ECC function using an extended Hamming code capable of single-error correction and double-error detection was designed for safety considerations. In this paper, a new test algorithm is proposed to test whether the ECC function operates normally in the MTP IP with a built-in ECC function, and it is confirmed through a test using logic tester equipment that the output data DOUT[7:0] and the error flag ERROR_FLAG[1:0] are exactly the same in the cases of no error, a single-bit error, and a double-bit error. In addition, by sharing a current-controlled ring oscillator circuit that uses a current-starved inverter in the VPP, VNN, and VNNL charge pumping circuits that share a single ring oscillator in the erase and program operation modes of the MTP IP and using the regulated VPVR as power, the pumping capacitor size is reduced, and a new technology to reduce ripple voltage variation is proposed. Meanwhile, in the VNN level detector circuit that detects whether the VNN has reached the target voltage, a folded-cascode CMOS OP-AMP whose output swing voltage is almost VDD is used instead of a differential amplifier circuit with a PMOS differential input pair to ensure that normal VNN level detection operation occurs. Full article

This paper proposes a highly linear low-noise amplifier (LNA) using a cascode configuration. In the proposed topology, the linearity of the circuit is enhanced through the application of derivative superposition technology. The technology combines an auxiliary transistor operating in the moderate inversion region with a main transistor operating in the strong inversion region, and two degenerative inductors are connected in series at the source nodes of both transistors. The primary objective of this design is to mitigate the negative impacts of second-order and third-order nonlinearities on the third-order input intercept point (IIP3) through their interactions, thereby enhancing the linear performance of the circuit. An on-chip active bias circuit is designed to effectively address fluctuations in the IIP3 during process and temperature variations by stabilizing the transconductance of the common-source transistor, enabling the LNA to operate reliably in complex environments. During post-layout simulation in DongBu High-Tech’s 0.13 μm CMOS process, the circuit’s output third-order intercept point (OIP3) exhibits minimal fluctuations across different process corners and temperature variations. At the typical nmos and typical pmos (TT) process corner and a temperature of 30 °C, it achieves an OIP3 of 33.9 dBm with a power consumption of 42 mW sourced from a 2.8 V power supply. Furthermore, it realizes a relatively flat gain of 16 dB, a noise figure (NF) of 0.91 dB, input return loss less than −8 dB, and output return loss less than −10 dB. Full article

This paper presents a single-input multiple-output (SIMO) cascode low-noise amplifier with inductive degeneration for inter- and intra-band carrier aggregation. The proposed low-noise amplifier has two output ports for flexible operation in carrier aggregation combinations for band 30 and band 7. However, during inter- and intra-band operation, gain variation occurs depending on the output mode. To compensate for this, a switching circuit is proposed to adjust the degeneration inductor, optimizing gain performance for both modes. The switching operation can minimize the control for the dynamic range in the receiver system to support carrier aggregation. The designed low-noise amplifier was fabricated using a 65 nm CMOS process, occupying an area of 2.1 mm². In inter-band operation, the small-signal gain was measured by 18.9 dB for band 30 and 18.6 dB for band 7, with the noise figures of 1.03 dB and 1.07 dB, respectively. For intra-band operation, the small-signal gain was 17.3 dB and 17.2 dB, with the noise figures of 1.3 dB and 1.41 dB. The IIP₃ values were measured by −7.6 dBm and −6.7 dBm for inter-band, and −6.3 dBm and −6.2 dBm for intra-band. Power consumption was 8.04 mW and 7.68 mW in inter-band, and 17.04 mW and 17.64 mW in intra-band depending on the output configuration. Full article

This paper presents a thorough robust Class-AB power amplifier design and its application in pressure-mode sensor-on-chip nonlinearity correction. Considering its use in piezoresistive sensing applications, a gain-boosting-aided folded cascode structure is utilized to increase the amplifier’s gain by a large amount as well as enhancing the power rejection ability, and a push–pull structure with miller compensation, a floating gate technique, and an adaptive output driving limiting structures are adopted to achieve high-efficiency current driving capability, high stability, and electronic environmental compatibility. This amplifier is applied in a real sensor nonlinearity correction on-chip system. With the help of a self-designed 7-bit + sign DAC and a self-designed two-stage operational amplifier, this system is compatible with nonlinear correction at different signal conditioning output values. It can also drive resistive sensors as small as 300 ohms and as high as tens of thousands of ohms. The designed two-stage operational amplifier utilizes the TSMC 0.18 um process, resulting in a final circuit power consumption of 0.183 mW. The amplifier exhibits a gain greater than 140 dB, a phase margin of 68°, and a unit gain bandwidth exceeding 199.76 kHz. The output voltage range spans from 0 to 4.6 V. The final simulation results indicate that the nonlinear correction system designed in this paper can correct piezoresistive sensors with a nonlinearity of up to ±2.5% under various PVT (Process–Voltage–Temperature) conditions. After calibration by this system, the maximum error in the output voltage is 4 mV, effectively reducing the nonlinearity to 4% of its original value in the worst-case scenario. Full article

Battery-powered Internet-of-Things applications require high-resolution, energy-efficient analog-to-digital converters (ADCs). There are still limited works on sub-MHz-bandwidth ADC designs. This paper presents a sturdy multi-stage shaping (SMASH) discrete-time (DT) delta-sigma modulator (DSM) structure using a self-cascoded floating-inverter-based dynamic amplifier (FIA). The proposed structure removes the explicit quantization error extraction of the first loop and all the feedback DACs in the cascaded loop, decreasing the design complexity of the circuit. This enables the proposed DT DSM to operate at a higher speed, which is suitable for achieving high-order noise at a low oversampling ratio (OSR). The proposed self-cascoded FIA is more power-efficient and can acquire more than 45 dB DC gain under a 1.2 V supply. The DT DSM implemented in a piece of 55 nm CMOS technology measures an 88.0 dB peak signal-to-noise-and-distortion ratio (SNDR) in a 100 kHz bandwidth (BW) and an 85.3 dB dynamic range (DR), consuming 249.1 μW from a 1.2 V supply at 10 MS/s. The obtained 174.0 dB SNDR-based Schreier figure-of-merit (FoMs) is competitive within state-of-art high-resolution (SNDR > 85 dB) and general-purpose (sub-MHz-bandwidth) ΔΣ ADCs. Full article