Search Results (213)

Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, it is beneficial that the applied materials would have to be compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. Fabricating methods of these materials can determine their stoichiometry and structural composition, which can have a detrimental impact on the electrical performance of manufactured devices. In this study, we present the influence of the Ar/N₂ ratio during reactive magnetron sputtering of titanium nitride (TiN) electrodes on the resistive switching behavior of MIM devices. We used silicon oxide (SiOx) as a dielectric layer, which was characterized by the same properties in all fabricated MIM structures. The composition of TiN thin layers was controlled by tuning the Ar/N₂ ratio during the deposition process. The fabricated conductive materials were characterized in terms of chemical and structural properties employing X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. Structural characterization revealed that increasing the Ar content during the reactive sputtering process affects the crystallite size of the deposited TiN layer. The resulting crystallite sizes ranged from 8 Å to 757.4 Å. The I-V measurements of fabricated devices revealed that tuning the Ar/N₂ ratio during the deposition of TiN electrodes affects the RS behavior. Our work shows the importance of controlling the stoichiometry and structural parameters of electrodes on resistive switching phenomena. Full article

In this study, tin oxide (SnO₂) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal–insulator–metal (MIM) structures. The fabrication process began with the deposition of a silicon dioxide (SiO₂) layer onto a silicon (Si) substrate, followed by the deposition of a titanium nitride (TiN) layer to serve as the bottom electrode. Subsequently, the tin oxide (SnO₂) layer was deposited as the resistive switching insulator. Two types of top electrodes were developed to investigate the influence of different oxygen concentrations on the bipolar switching, electrical characteristics, and performance of memory devices. An aluminum (Al) top electrode was deposited using thermal evaporation, while a platinum (Pt) top electrode was deposited via dc sputtering. As a result, two distinct metal–insulator–metal (MIM) memory RRAM device structures were formed, i.e., Al/SnO₂/TiN/SiO₂/Si and Pt/SnO₂/TiN/SiO₂/Si. In addition, the symmetry bipolar switching characteristics, electrical conduction mechanism, and oxygen concentration factor of the tin oxide-based memory devices using rapid thermal annealing and different top electrodes were determined and investigated by ohmic, space-charge-limit-current, Schottky, and Poole–Frenkel conduction equations in this study. Full article

Hydrogen (H₂) gas sensors are essential for detecting leaks and ensuring safety, thereby supporting the broader adoption of hydrogen energy. The performance of H₂ sensors has been shown to be improved by the incorporation of TiO₂ nanostructures. The key findings are summarized as follows: (1) Resistive random-access memory (ReRAM) technology was used to fabricate extremely compact H₂ sensors via various forming techniques, and substantial sensor performance enhancement was investigated. (2) A nanocontact composed of titanium oxide (TiO_x)/platinum (Pt) was subjected to various forming operations to establish a Schottky junction with a nanogap structure on a tantalum oxide (Ta₂O₅) layer, and its properties were assessed. (3) When the Pt electrode was on the positive side during the forming operation used for ReRAM technology, a Pt nanopillar structure was produced. By contrast, when the forming operation was conducted with a positive bias on the TiO_x side, a mixed oxide film of Ta and Ti was produced, which indicates local Ta doping into the TiO_x. A sensor response of over 1000 times was achieved at a minimal voltage of 1 mV at room temperature. (4) This sensor fabrication technology based on the forming operation is promising for the development of low-power consumption sensors. Full article

Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO₃-Ag RRAM device featuring 2D α-MoO₃ as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>10⁶), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO₃-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>10⁴ s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. Full article

This work investigates the impact of reset pulse width on multilevel conductance programming in Al₂O₃/TiO_x-based resistive random access memory. A 32 × 32 cross-point array of Ti (12 nm)/Pt (62 nm)/Al₂O₃ (3 nm)/TiO_x (32 nm)/Ti (14 nm)/Pt (60 nm) devices (2.5 µm × 2.5 µm active area) was fabricated via e-beam evaporation, atomic layer deposition, and reactive sputtering. Following an initial forming step and a stabilization phase of five DC reset–set cycles, devices were programmed using an incremental step pulse programming (ISPP) scheme. Reset pulses of fixed amplitude were applied with widths of 100 µs, 10 µs, 1 µs, and 100 ns, and the programming sequence was terminated when the read current at 0.2 V exceeded a 45 µA target. At a 100 µs reset pulse width, most cycles exhibited abrupt current jumps that exceeded the target current, whereas at a 100 ns width, the programmed current increased gradually in all cycles, enabling precise conductance tuning. Cycle-to-cycle variation decreased by more than 50% as the reset pulse width was reduced, indicating more uniform filament disruption and regrowth. These findings demonstrate that controlling reset pulse width offers a straightforward route to reliable, linear multilevel operation in Al₂O₃/TiO_x-based RRAM. Full article

Novel wide-bandgap ZnO, BeO, and ZnBeO materials have recently gained considerable interest due to their stellar optoelectronic properties. These semiconductors are being used in developing high-resolution, flexible, transparent nanoelectronics/photonics and achieving high-power radio frequency modules for sensors/biosensors, photodetectors/solar cells, and resistive random-access memory applications. Despite earlier evidence of attaining p-type wz ZnO with N doping, the problem persists in achieving reproducible p-type conductivity. This issue is linked to charging compensation by intrinsic donors and/or background impurities. In ZnO: Al (Li), the vibrational features by infrared and Raman spectroscopy have been ascribed to the presence of isolated ${\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}{(\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}})$ defects, nearest-neighbor (NN) ${[\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}{-\mathrm{N}}_{\mathrm{O}}$] pairs, and second NN ${[\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}{-\mathrm{O}-\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}};{\mathrm{V}}_{\mathrm{Z}\mathrm{n}}-\mathrm{O}{-\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}}]$ complexes. However, no firm identification has been established. By integrating accurate perturbation models in a realistic Green’s function method, we have meticulously simulated the impurity vibrational modes of ${\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}$${(\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}})$ and their bonding to form complexes with dopants as well as intrinsic defects. We strongly feel that these phonon features in doped ZnO will encourage spectroscopists to perform similar measurements to check our theoretical conjectures. Full article

Resistive random-access memory (RRAM) has been attractive as an emerging memory that can be used for computing-in-memory (CIM) and storage-class memory (SCM). However, achieving gradual resistive switching (RS) characteristics and minimizing the variability remain critical challenges. In this work, we investigate the wake-up effect in Al₂O₃-based RRAM and its role in improving RS properties. Two types of wake-up effects were found: HRS variation improvement and gradual switching during set operation. First, a reduction in current variation in the high-resistance state (HRS), which indicates improvement of filament stability and uniformity. Second, gradual switching during the set voltage sweep, suggesting a more gradual modulation of the conduction mechanism, likely related to interface conductive filament (CF) generation. By harnessing the wake-up effect, it is possible to overcome the limitations of RRAM, which allows writing only during the reset voltage sweep, to enable writing during the set voltage sweep as well. Full article

This work presents a memristive device based on a composite of Scindapsus aureus (SA) and gold nanoparticles (Au NPs), which exhibits excellent resistive switching characteristics and supports multiple forms of synaptic plasticity such as paired-pulse facilitation (PPF), spike-rate-dependent plasticity (SRDP), and spike-timing-dependent plasticity (STDP). The device demonstrates reliable retention, reproducibility, and switching stability. The SA:Au NP composite originates from a natural plant source and possesses green, biodegradable, and biocompatible features, highlighting its potential as a sustainable bio-memristive material for neuromorphic systems. Furthermore, the device exhibits sensitivity to the time interval between paired input pulses, simulating the neural response to interaural time differences (ITDs) in the auditory system. Although not a conventional acoustic sensor, its Δt-responsiveness based on synaptic behavior reveals promising potential in neuromorphic auditory perception and perceptual computing applications. This study provides a foundational synaptic unit for future artificial hearing systems capable of spatial sound localization. Full article

In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nitride/silicon substrates using the sol–gel method, using rapid thermal annealing for defect repair and re-crystallization processing. The crystallization structure and surface morphology of annealed and as-deposited BST films were obtained by XPS, XRD, and SEM measurements. Additionally, the ferroelectric and resistive switching properties for the memory window, the maximum capacitance, and the leakage current were examined for Al/BST/TiN and Cu/BST/TiN structure memory devices. In addition, the first-order reaction equation of the decay reaction behavior for the BST film RRAM devices in the reset state revealed that $r=0.19{[O^{2-}]}^1$. Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices. Full article

In this study, the bipolar resistance switching behavior and electrical conduction transport properties of a neodymium oxide film’s resistive random access memory (RRAM) devices for using different top electrode materials were observed and discussed. Different related electrical properties and transport mechanisms are important factors in applications in a film’s RRAM devices. For aluminum top electrode materials, the electrical conduction mechanism of the neodymium oxide film’s RRAM devices all exhibited hopping conduction behavior, with 1 mA and 10 mA compliance currents in the set state for low/high voltages applied. For TiN and ITO (Indium tin oxide) top electrode materials, the conduction mechanisms all exhibited ohmic conduction for the low voltage applied, and all exhibited hopping conduction behavior for the high voltage applied. In addition, the electrical field strength simulation resulted in an increase in the reset voltage, indicating that oxygen ions have diffused into the vicinity of the ITO electrode during the set operation. This was particularly the case in the three physical models proposed, and based on the relationship between different ITO electrode thicknesses and the oxygen ion concentration distribution effect of the neodymium oxide film’s RRAM devices, they were investigated and discussed. To prove the oxygen concentration distribution expands over the area of the ITO electrode, the simulation software was used to analyze and simulate the distribution of the electric field for the Poisson equation. Finally, the neodymium oxide film’s RRAM devices for using different top electrode materials all exhibited high memory window properties, bipolar resistance switching characteristics, and non-volatile properties for incorporation into next-generation non-volatile memory device applications in this study. Full article

The rapid advancement of artificial intelligence (AI) technologies has significantly increased the demand for high-performance computational hardware. Memristor-based compute-in-memory (CIM) technology, also known as resistive random-access memory (RRAM)-based CIM technology, shows great potential for addressing the data transfer bottleneck and supporting high-performance computing (HPC). In this paper, a multi-scale thermal model is developed to evaluate the temperature distribution in RRAM-based CIM chips and the influence of various factors on thermal behavior. The results indicate that hotspot temperatures can be mitigated by reducing the epoxy molding compound (EMC) thickness, increasing the substrate thickness, and lowering boundary thermal resistance. Moreover, optimizing the layout of analog computing circuits and digital circuits can reduce the maximum temperature by up to 4.04 °C. Furthermore, the impact of temperature on the conductance of RRAM devices and the inference accuracy of RRAM-based CIM chips is analyzed. Simulation results reveal that thermal-induced accuracy loss in CIM chips is significant, but the computation correction method effectively reduces the accuracy loss from 66.4% to 1.4% at 85 °C. Full article

In this study, an innovative switching approach is explored to improve the reliability of 1 Selector-1 ReRAM (1S1R) devices, integrated into a 4K crossbar array (CBA). The key innovation is the use of DC sweeping for set operations and AC single-pulse resetting to minimize device stress and prevent breakdown. The selector, based on a GeSeTe ovonic threshold switching (OTS) element, demonstrated excellent endurance (>10¹² cycles), fast switching (<100 ns), and high device-to-device uniformity (<5% variability). The ReRAM, constructed with Pt/LiNbO_x/W, exhibited robust bipolar resistive switching, multi-bit capability, and endurance exceeding 10¹² cycles. The integrated 1S1R CBA demonstrated reliable retention and low variability in operation, showing potential for high-performance, high-density memory applications. Full article

Differential Computation Analysis (DCA) leverages memory traces to extract secret keys, bypassing countermeasures employed in white-box designs, such as encodings. Although researchers have made great efforts to enhance security against DCA, most solutions considerably decrease algorithmic efficiency. In our approach, the Feistel cipher SM4 is implemented by a series of table-lookup operations, and the input and output of each table are protected by affine transformations and nonlinear encodings generated randomly. We employ fourth-order non-linear encoding to reduce the loss of efficiency while utilizing a random sequence to shuffle lookup table access, thereby severing the potential link between memory data and the intermediate values of SM4. Experimental results indicate that the DCA procedure fails to retrieve the correct key. Furthermore, theoretical analysis shows that the techniques employed in our scheme effectively prevent existing algebraic attacks. Finally, our design requires only 1.44 MB of memory, significantly less than that of the known DCA-resistant schemes—Zhang et al.’s scheme (24.3 MB), Yuan et al.’s scheme (34.5 MB) and Zhao et al.’s scheme (7.8 MB). Thus, our SM4 white-box design effectively ensures security while maintaining a low memory cost. Full article

In the era of artificial intelligence and Internet of Things, data storage has an important impact on the future development direction of data analysis. Resistive random-access memory (RRAM) devices are the research hotspot in the era of artificial intelligence and Internet of Things. Perovskite-type rare-earth metal oxides are common functional materials and considered promising candidates for RRAM devices because their interesting electronic properties depend on the interaction between oxygen ions, transition metals, and rare-earth metals. LaCoO₃, NdCoO₃, and SmCoO₃ are typical rare-earth cobaltates (RCoO₃). These perovskite materials were fabricated by electrospinning and the calcination method. The aim of this study was to investigate the resistive switching effect in the RCoO₃ structure. The oxygen vacancies in RCoO₃ are helpful to form conductive filaments, which dominates the resistance transition mechanism of Pt/RCoO₃/Pt. The electronic properties of RCoO₃ were investigated, including the barrier height and the shape of the conductive filaments. This study confirmed the potential application of LaCoO₃, NdCoO₃, and SmCoO₃ in memory storage devices. Full article

Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique. Al’s and Au’s top electrodes were deposited on AlN thin films to make a Au/Al/AlN/ITO sandwich structure memristor. The effects of the Al₂O₃ film on the on/off window and voltage characteristics of the device were investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of AlN films, respectively. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and switching ratio. Full article