Advances in Emerging Nonvolatile Memory, 3rd Edition
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: closed (29 February 2024) | Viewed by 3530
Special Issue Editor
2. Intel Corporation, Hillsboro, OR 97124, USA
Interests: memristor; memcomputing; neuromorphic systems; biomimic smart system
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
As the scaling of electronic semiconductor devices displays signs of saturation, it is worth looking into emerging, beyond-CMOS technologies. Very promising emerging technologies currently in high industry demand are emerging nonvolatile memory devices, including resistive random-access memory (RRAM), phase-change memory (PCM), magneto-resistive random-access memory (MRAM), ferroelectric random-access memory (FeRAM), etc. Compared with flash memory, emerging nonvolatile memory has many merits, such as fast switching speed, low power, high endurance, and a simple device structure. Over the past decade, emerging nonvolatile memory devices have achieved great advances in physical mechanisms, modelling, materials, integration, architecture, and applications. In the context of potential applications, these include memory, neuromorphic computing, nonvolatile logic operations, and stochastic computing. At present, it is possible to buy several commercial standalone memory products based on emerging nonvolatile memory in the semiconductor market. Meanwhile, merging nonvolatile memory can store and process information using the same devices, which has made in-memory computing a hot topic recently. This Special Issue demonstrates the state of the art and exemplifies the recent advances in the field of emerging nonvolatile memory devices for storage and computing and brings together scholars from different scientific disciplines (physics, materials science, electrical engineering, computer science, etc.) representing all aspects of emerging nonvolatile memory devices, from fundamentals to applications.
We look forward to receiving your submissions.
Dr. Yao-Feng Chang
Guest Editor
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Keywords
- emerging nonvolatile memory devices: RRAM, PCM, MRAM, FeRAM
- physical mechanism of nonvolatile switching
- nonvolatile switching materials
- integration of emerging nonvolatile memory devices
- new memory architecture for nonvolatile switching devices
- in-memory computing based on nonvolatile memory
- deep neural networks
- neuromorphic computing
- nonvolatile logic operation
- PUF
- stochastic computing
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Related Special Issues
- Advances in Emerging Nonvolatile Memory in Micromachines (13 articles)
- Advances in Emerging Nonvolatile Memory, Volume II in Micromachines (13 articles)
