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Keywords = LiNbO3 thin films

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12 pages, 2003 KB  
Review
Sputtered LiNbO3 Thin Films for Application in Integrated Photonics: A Review
by Igor Kuznetsov, Anton Perin, Angelina Gulyaeva and Vladimir Krutov
Crystals 2025, 15(3), 270; https://doi.org/10.3390/cryst15030270 - 14 Mar 2025
Cited by 2 | Viewed by 3658
Abstract
LiNbO3 plays a significant role in modern integrated photonics because of its unique properties. One of the challenges in modern integrated photonics is reducing chip production cost. Today, the most widespread yet expensive method to fabricate thin films of LiNbO3 is [...] Read more.
LiNbO3 plays a significant role in modern integrated photonics because of its unique properties. One of the challenges in modern integrated photonics is reducing chip production cost. Today, the most widespread yet expensive method to fabricate thin films of LiNbO3 is the smart cut method. The high production cost of smart-cut chips is caused by the use of expensive equipment for helium implantation. A prospective method to reduce the cost of photonic integrated circuits is to use sputtered thin films of lithium niobite, since sputtering technology does not require helium implantation equipment. The purpose of this review is to assess the feasibility of applying sputtered LiNbO3 thin films in integrated photonics. This work compares sputtered LiNbO3 thin films and those fabricated by widespread methods, including the smart cut method, liquid-phase epitaxy, chemical vapor deposition, pulsed laser deposition, and molecular-beam epitaxy. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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16 pages, 7015 KB  
Article
Laterally Excited Bulk Acoustic Wave Resonators with Rotated Electrodes Using X-Cut LiNbO3 Thin-Film Substrates
by Jieyu Liu, Wenjuan Liu, Zhiwei Wen, Min Zeng, Yao Cai and Chengliang Sun
Sensors 2025, 25(6), 1740; https://doi.org/10.3390/s25061740 - 11 Mar 2025
Cited by 2 | Viewed by 1757
Abstract
With the development of piezoelectric-on-insulator (POI) substrates, X-cut LiNbO3 thin-film resonators with interdigital transducers are widely investigated due to their adjustable resonant frequency (fs) and effective electromechanical coupling coefficient (Keff2). This paper presents [...] Read more.
With the development of piezoelectric-on-insulator (POI) substrates, X-cut LiNbO3 thin-film resonators with interdigital transducers are widely investigated due to their adjustable resonant frequency (fs) and effective electromechanical coupling coefficient (Keff2). This paper presents an in-depth study of simulations and measurements of laterally excited bulk acoustic wave resonators based on an X-cut LiNbO3/SiO2/Si substrate and a LiNbO3 thin film to analyze the effects of electrode angle rotation (θ) on the modes, fs, and Keff2. The rotated θ leads to different electric field directions, causing mode changes, where the resonators without cavities are longitudinal leaky SAWs (LLSAWs, θ = 0°) and zero-order shear horizontal SAWs (SH0-SAWs, θ = 90°) and the resonators with cavities are zero-order-symmetry (S0) lateral vibrating resonators (LVRs, θ = 0°) and SH0 plate wave resonators (PAW, θ = 90°). The resonators are fabricated based on a 400 nm X-cut LiNbO3 thin-film substrate, and the measured results are consistent with those from the simulation. The fabricated LLSAW and SH0-SAW without cavities show a Keff2 of 1.62% and 26.6% and a Bode-Qmax of 1309 and 228, respectively. Meanwhile, an S0 LVR and an SH0-PAW with cavities present a Keff2 of 4.82% and 27.66% and a Bode-Qmax of 3289 and 289, respectively. In addition, the TCF with a different rotated θ is also measured and analyzed. This paper systematically analyzes resonators on X-cut LiNbO3 thin-film substrates and provides potential strategies for multi-band and multi-bandwidth filters. Full article
(This article belongs to the Special Issue Advanced Flexible Electronics for Sensing Application)
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11 pages, 2654 KB  
Article
Design of a High Coupling SAW Resonator Based on an Al/41° Y-X LiNbO3/SiO2/poly-Si/Si Structure for Wideband Filter
by Xiaoyu Wang, Yang Chang, Qiaozhen Zhang, Luyao Liu, Xinyi Wang and Haodong Wu
Micromachines 2025, 16(3), 323; https://doi.org/10.3390/mi16030323 - 11 Mar 2025
Cited by 2 | Viewed by 1100
Abstract
With the rapid development of fifth-generation (5G) mobile communication technology, the performance requirements for radio frequency front-end surface acoustic wave (SAW) devices have become increasingly stringent. Surface acoustic wave devices on piezoelectric thin film-based layered structures with high electromechanical coupling coefficients and low-frequency [...] Read more.
With the rapid development of fifth-generation (5G) mobile communication technology, the performance requirements for radio frequency front-end surface acoustic wave (SAW) devices have become increasingly stringent. Surface acoustic wave devices on piezoelectric thin film-based layered structures with high electromechanical coupling coefficients and low-frequency temperature compensation characteristics have emerged as a key solution. In this work, a SAW resonator based on an Al/41° Y-X LiNbO3/SiO2/poly-Si/Si multi-layered structure is proposed. FEM modeling of the proposed resonator and the influences of the thicknesses of the LiNbO3, SiO2, and Al electrodes on performances such as the parasitic noise, bandwidth, and electromechanical coupling coefficient are analyzed. Optimal parameters for the multi-layer piezoelectric structure are identified for offering large coupling up to 24%. Based on these findings, a single-port SAW resonator with an Al/41° Y-X LiNbO3/SiO2/poly-Si/Si substrate structure is fabricated. The experimental results align well with the simulation results; meanwhile, the SAW filter based on the proposed resonator demonstrates that a center frequency of 2.3 GHz, a 3-dB fractional bandwidth of 23.48%, and a minimum in-band insertion loss of only 0.343 dB are simultaneously achieved. This study provides guidance for the development of multi-layer film SAW resonator-based filters with high-performance. Full article
(This article belongs to the Section A:Physics)
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33 pages, 6303 KB  
Review
Advanced Crystallization Methods for Thin-Film Lithium Niobate and Its Device Applications
by Rongbang Yang, Haoming Wei, Gongbin Tang, Bingqiang Cao and Kunfeng Chen
Materials 2025, 18(5), 951; https://doi.org/10.3390/ma18050951 - 21 Feb 2025
Cited by 5 | Viewed by 2692
Abstract
Lithium niobate (LiNbO3) has remarkable ferroelectric properties, and its unique crystal structure allows it to undergo significant spontaneous polarization. Lithium niobate plays an important role in the fields of electro-optic modulation, sensing and acoustics due to its excellent electro-optic and piezoelectric [...] Read more.
Lithium niobate (LiNbO3) has remarkable ferroelectric properties, and its unique crystal structure allows it to undergo significant spontaneous polarization. Lithium niobate plays an important role in the fields of electro-optic modulation, sensing and acoustics due to its excellent electro-optic and piezoelectric properties. Thin-film LiNbO3 (TFLN) has attracted much attention due to its unique physical properties, stable properties and easy processing. This review introduces several main preparation methods for TFLN, including chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), magnetron sputtering and Smartcut technology. The development of TFLN devices, especially the recent research on sensors, memories, optical waveguides and EO modulators, is introduced. With the continuous advancement of manufacturing technology and integration technology, TFLN devices are expected to occupy a more important position in future photonic integrated circuits. Full article
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9 pages, 4045 KB  
Article
A Laterally Excited Bulk Acoustic Wave Resonator Based on LiNbO3 with Arc-Shaped Electrodes
by Jieyu Liu, Wenjuan Liu, Zhiwei Wen, Min Zeng and Chengliang Sun
Micromachines 2024, 15(11), 1367; https://doi.org/10.3390/mi15111367 - 12 Nov 2024
Cited by 3 | Viewed by 2816
Abstract
High frequency and large bandwidth are growing trends in communication radio-frequency devices. The LiNbO3 thin film material is expected to become the preferred piezoelectric material for high coupling resonators in the 5G frequency band due to its ultra-high piezoelectric coefficient and low [...] Read more.
High frequency and large bandwidth are growing trends in communication radio-frequency devices. The LiNbO3 thin film material is expected to become the preferred piezoelectric material for high coupling resonators in the 5G frequency band due to its ultra-high piezoelectric coefficient and low loss characteristics. The main mode of laterally excited bulk acoustic wave resonators (XBAR) have an ultra-high sound velocity, which enables high-frequency applications. However, the interference of spurious modes is one of the main reasons hindering the widespread application of XBAR. In this paper, a Z-cut LiNbO3 thin film-based XBAR with arc-shaped electrodes is presented. We investigate the electric field distribution of the XBAR, while the irregular boundary of the arc-shaped electrodes affects the electric field between the existing interdigital transducers (IDTs). The mode shapes and impedance response of the XBAR with arc-shaped electrodes and the XBARs with traditional IDTs are compared in this work. The fabricated XBAR on a 350 nm Z-cut LiNbO3 thin film with arc-shaped electrodes operating at over 5 GHz achieves a high effective electromechanical coupling coefficient of 29.8% and the spurious modes are well suppressed. This work promotes an XBAR with an optimized electrode design to further achieve the desired performance. Full article
(This article belongs to the Special Issue Piezoelectric Devices and System in Micromachines)
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12 pages, 4683 KB  
Article
Growth of Al-Cu Thin Films on LiNbO3 Substrates for Surface Acoustic Wave Devices Based on Combinatorial Radio Frequency Magnetron Sputtering
by Junseong Eom, Tae-Won Kim, Peddathimula Puneetha, Jae-Cheol Park and Siva Pratap Reddy Mallem
Crystals 2024, 14(10), 844; https://doi.org/10.3390/cryst14100844 - 27 Sep 2024
Cited by 1 | Viewed by 1418
Abstract
Al-Cu thin films were fabricated by RF magnetron sputtering from aluminum (Al) and copper (Cu) metal targets to improve the acoustic performance of SAW devices on LiNbO3 substrates. To optimize the electrode material for SAW devices, Al-Cu films with various compositions were [...] Read more.
Al-Cu thin films were fabricated by RF magnetron sputtering from aluminum (Al) and copper (Cu) metal targets to improve the acoustic performance of SAW devices on LiNbO3 substrates. To optimize the electrode material for SAW devices, Al-Cu films with various compositions were fabricated and their electrical, mechanical, and acoustic properties were comprehensively evaluated. The Al-Cu films exhibited a gradual decrease in resistivity with increasing Al content. The double-electrode SAW devices composed of Al-Cu films demonstrated a resonant frequency of 70 MHz and an average insertion loss of −16.1 dB, which was significantly lower than that of devices made with traditional Au or Al electrodes. Additionally, the SAW devices showed an increase in the FWHM values of the resonant frequency and a decrease in the insertion loss as the Al content in the IDT electrode decreased. These findings indicate that improving the performance of SAW devices can be achieved by reducing the density of the IDT electrodes, rather than focusing solely on their electrical characteristics. Full article
(This article belongs to the Special Issue Preparation and Characterization of Optoelectronic Functional Films)
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11 pages, 4925 KB  
Article
Growth of Low-Temperature Epitaxial Lithium Niobate Thin Films and Guided-Wave Optical Properties
by Thanh Ngoc Kim Bui, Estelle Wagner, Rahma Moalla, William Maudez, Karim Dogheche, Romain Bachelet, Bruno Masenelli, Giacomo Benvenuti, Denis Rémiens and El Hadj Dogheche
Photonics 2024, 11(10), 895; https://doi.org/10.3390/photonics11100895 - 24 Sep 2024
Viewed by 2841
Abstract
LiNbO3 thin films are grown on a c-plane (0001) sapphire wafer at a relatively low substrate temperature by chemical beam vapor deposition (CBVD) in Sybilla equipment. Raman measurements only evidence the LiNbO3 phase, while HR-XRD diffractograms demonstrate a c-axis-oriented growth with [...] Read more.
LiNbO3 thin films are grown on a c-plane (0001) sapphire wafer at a relatively low substrate temperature by chemical beam vapor deposition (CBVD) in Sybilla equipment. Raman measurements only evidence the LiNbO3 phase, while HR-XRD diffractograms demonstrate a c-axis-oriented growth with only (006) and (0012) planes measured. The rocking curve is symmetric, with a full width at half maximum (FWHM) of 0.04°. The morphology and topography observed by SEM and AFM show very low roughness, with rms equaling 2.0 nm. The optical properties are investigated by a guided-wave technique using prism coupling. The ordinary refractive index (no) and extraordinary refractive index (ne) at different wavelengths totally match with the LiNbO3 bulk, showing the high microstructural quality of the film. The film composition is estimated by Raman and bi-refringence and shows a congruent or near-stoichiometric LiNbO3. Full article
(This article belongs to the Section Optoelectronics and Optical Materials)
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11 pages, 2264 KB  
Article
Development of Highly Efficient Lamb Wave Transducers toward Dual-Surface Simultaneous Atomization
by Chenhui Gai, Qinghe Ma, Jia Ning, Yizhan Ding, Yulin Lei, Honggeng Li, Chunhua Guo and Hong Hu
Sensors 2024, 24(17), 5607; https://doi.org/10.3390/s24175607 - 29 Aug 2024
Viewed by 1272
Abstract
Highly efficient surface acoustic wave (SAW) transducers offer significant advantages for microfluidic atomization. Aiming at highly efficient atomization, we innovatively accomplish dual-surface simultaneous atomization by strategically positioning the liquid supply outside the IDT aperture edge. Initially, we optimize Lamb wave transducers and specifically [...] Read more.
Highly efficient surface acoustic wave (SAW) transducers offer significant advantages for microfluidic atomization. Aiming at highly efficient atomization, we innovatively accomplish dual-surface simultaneous atomization by strategically positioning the liquid supply outside the IDT aperture edge. Initially, we optimize Lamb wave transducers and specifically investigate their performance based on the ratio of substrate thickness to acoustic wavelength. When this ratio h/λ is approximately 1.25, the electromechanical coupling coefficient of A0-mode Lamb waves can reach around 5.5% for 128° Y-X LiNbO3. We then study the mechanism of droplet atomization with the liquid supply positioned outside the IDT aperture edge. Experimental results demonstrate that optimized Lamb wave transducers exhibit clear dual-surface simultaneous atomization. These transducers provide equivalent amplitude acoustic wave vibrations on both surfaces, causing the liquid thin film to accumulate at the edges of the dual-surface and form a continuous mist. Full article
(This article belongs to the Special Issue Exploring the Sensing Potential of Acoustic Wave Devices)
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11 pages, 4700 KB  
Article
Ferroelectric Domain Intrinsic Radiation Resistance of Lithium Niobate Ferroelectric Single−Crystal Film
by Jiahe Li, Jinlong He, Liya Niu, Hao Lu, Xiaojun Qiao, Bo Zhong, Mingzhu Xun, Xiujian Chou and Wenping Geng
Crystals 2024, 14(6), 537; https://doi.org/10.3390/cryst14060537 - 7 Jun 2024
Viewed by 2240
Abstract
The study of the properties of ferroelectric materials against irradiation has a long history. However, anti−irradiation research on the ferroelectric domain has not been carried out. In this paper, the irradiation of switched domain structure is innovatively proposed. The switched domain of 700 [...] Read more.
The study of the properties of ferroelectric materials against irradiation has a long history. However, anti−irradiation research on the ferroelectric domain has not been carried out. In this paper, the irradiation of switched domain structure is innovatively proposed. The switched domain of 700 nm lithium niobate (LiNbO3, LN) thin film remains stable after gamma irradiation from 1 krad to 10 Mrad, which was prepared by piezoresponse force microscopy (PFM). In addition, the changing law of domain wall resistivity is explored through different sample voltages, and it is verified that the irradiated domain wall conductivity is still larger than the domain. This domain wall current (DWC) property can be applied to storage, logic, sensing, and other devices. Based on these, a ferroelectric domain irradiation resistance model is established, which explains the reason at an atomic level. The results open a possibility for exploiting ferroelectric materials as the foundation in the application of space and nuclear fields. Full article
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14 pages, 6173 KB  
Article
Spurious-Free Shear Horizontal Wave Resonators Based on 36Y-Cut LiNbO3 Thin Film
by Yushuai Liu, Kangfu Liu, Jiawei Li, Yang Li and Tao Wu
Micromachines 2024, 15(4), 477; https://doi.org/10.3390/mi15040477 - 30 Mar 2024
Cited by 3 | Viewed by 4343
Abstract
This article presents lithium niobate (LiNbO3) based on shear horizontal (SH0) resonators, utilizing a suspended structure, for radio frequency (RF) applications. It demonstrates the design, analysis, and fabrication of SH0 resonators based on a 36Y-cut LiNbO3 thin film. The spurious-free [...] Read more.
This article presents lithium niobate (LiNbO3) based on shear horizontal (SH0) resonators, utilizing a suspended structure, for radio frequency (RF) applications. It demonstrates the design, analysis, and fabrication of SH0 resonators based on a 36Y-cut LiNbO3 thin film. The spurious-free SH0 resonator achieves an electromechanical coupling coefficient (kt2) of 42.67% and a quality factor (Qr) of 254 at the wave-propagating orientation of 0° in the 36Y-cut plane. Full article
(This article belongs to the Special Issue Design, Fabrication and Testing of MEMS/NEMS, 2nd Edition)
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16 pages, 3447 KB  
Article
LiNbO3 Thin Films through a Sol–Gel/Spin-Coating Approach Using a Novel Heterobimetallic Lithium–Niobium Precursor
by Francesca Lo Presti, Anna Lucia Pellegrino, Quentin Micard, Guglielmo Guido Condorelli, Samuel Margueron, Ausrine Bartasyte and Graziella Malandrino
Nanomaterials 2024, 14(4), 345; https://doi.org/10.3390/nano14040345 - 11 Feb 2024
Cited by 9 | Viewed by 4166
Abstract
Lithium niobate is a lead-free material which has attracted considerable attention due to its excellent optical, piezoelectric, and ferroelectric properties. This research is devoted to the synthesis through an innovative sol–gel/spin-coating approach of polycrystalline LiNbO3 films on Si substrates. A novel single-source [...] Read more.
Lithium niobate is a lead-free material which has attracted considerable attention due to its excellent optical, piezoelectric, and ferroelectric properties. This research is devoted to the synthesis through an innovative sol–gel/spin-coating approach of polycrystalline LiNbO3 films on Si substrates. A novel single-source hetero-bimetallic precursor containing lithium and niobium was synthesized and applied to the sol–gel synthesis. The structural, compositional, and thermal characteristics of the precursor have been tested through attenuated total reflection, X-ray photoelectron spectroscopy, thermogravimetric analysis, and differential scanning calorimetry. The LiNbO3 films have been characterized from a structural point of view with combined X-ray diffraction and Raman spectroscopy. Field-emission scanning electron microscopy, energy dispersive X-ray analysis, and X-ray photoelectron spectroscopy have been used to study the morphological and compositional properties of the deposited films. Full article
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11 pages, 4562 KB  
Article
Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures
by Yi Zhang, Yang Jiang, Chuying Tang, Chenkai Deng, Fangzhou Du, Jiaqi He, Qiaoyu Hu, Qing Wang, Hongyu Yu and Zhongrui Wang
Micromachines 2024, 15(2), 195; https://doi.org/10.3390/mi15020195 - 27 Jan 2024
Cited by 2 | Viewed by 2376
Abstract
The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based [...] Read more.
The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO3 thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure. Integration of support pillars enables the dissipation of spurious wave energy to the substrate, effectively mitigating unwanted spurious modes. Additionally, this novel approach involves anchoring the piezoelectric thin film to a supportive framework, consequently enhancing mechanical stability while simultaneously improving the heat dissipation capabilities of the core. Full article
(This article belongs to the Special Issue Basic MEMS Actuators)
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11 pages, 4389 KB  
Article
Through-Holes Design for Ideal LiNbO3 A1 Resonators
by Shu-Mao Wu, Chen-Bei Hao, Zhen-Hui Qin, Yong Wang, Hua-Yang Chen, Si-Yuan Yu and Yan-Feng Chen
Micromachines 2023, 14(7), 1341; https://doi.org/10.3390/mi14071341 - 30 Jun 2023
Cited by 2 | Viewed by 2390
Abstract
This paper proposes a method to realize ideal lithium niobate (LiNbO3) A1 resonators. By introducing subwavelength through-holes between the interdigital transducer (IDT) electrodes on the LiNbO3 surface, all unfavorable spurious modes of the resonators can be suppressed completely. It is [...] Read more.
This paper proposes a method to realize ideal lithium niobate (LiNbO3) A1 resonators. By introducing subwavelength through-holes between the interdigital transducer (IDT) electrodes on the LiNbO3 surface, all unfavorable spurious modes of the resonators can be suppressed completely. It is convenient and valid for various IDT electrode parameters and different LiNbO3 thicknesses. Also, this method does not require additional device fabrication steps. At the same time, these through-holes can greatly reduce the suspended area of the LiNbO3 thin film, thus significantly improving the design flexibility, compactness, mechanical stability, temperature stability, and power tolerance of the resonators (and subsequent filters). It is expected to become an important means to promote the practical application of LiNbO3 A1 filters and even all Lamb waves filters. Full article
(This article belongs to the Special Issue MEMS/NEMS Sensors and Actuators, 2nd Edition)
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11 pages, 2927 KB  
Article
High-Efficiency Second-Harmonic Generation Using Quasi-Bound State in LiNbO3 Metasurface
by Siyu Liu, Wei Hong, Xiubao Sui and Xin Hu
Photonics 2023, 10(6), 661; https://doi.org/10.3390/photonics10060661 - 7 Jun 2023
Cited by 6 | Viewed by 3802
Abstract
We numerically demonstrated a high-efficiency second-harmonic generation (SHG) using quasi-bound state in the continuum (quasi–BIC) in thin film LiNbO3 (TFLN) metasurface. The TFLN possessed exceptionally high second-order nonlinear coefficients, contributing to the enhanced SHG performance. An eccentric cylinder unit cell was presented [...] Read more.
We numerically demonstrated a high-efficiency second-harmonic generation (SHG) using quasi-bound state in the continuum (quasi–BIC) in thin film LiNbO3 (TFLN) metasurface. The TFLN possessed exceptionally high second-order nonlinear coefficients, contributing to the enhanced SHG performance. An eccentric cylinder unit cell was presented to achieve high Q–factor resonances associated with the asymmetric parameter introduced. Simulations showed that the high efficiency of the second-harmonic conversion was obtained by using the high Q–factor of the asymmetric dielectric cylinder metasurface, and it achieved a high SHG efficiency of 6.5% at pump intensities as low as 1 MW/cm2 at a normal incident. Furthermore, the simulation results indicated that breaking the symmetry through oblique incidence was more effective in achieving a higher Q–factor compared to altering the structural parameters. Specifically, under 1° oblique incidences, the conversion efficiency could reach 1.2% at an incident power of 1 kW/cm². We have proposed a method to achieve a high conversion efficiency of second-harmonic generation in low-refractive-index materials. Our work not only offers theoretical support but also provides valuable insights for the advancement of efficient nonlinear frequency doubling technology, optical communication, and sensing applications. Full article
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13 pages, 5812 KB  
Article
Applicability of the Effective Index Method for the Simulation of X-Cut LiNbO3 Waveguides
by Dmitrii Moskalev, Andrei Kozlov, Uliana Salgaeva, Victor Krishtop and Anatolii Volyntsev
Appl. Sci. 2023, 13(11), 6374; https://doi.org/10.3390/app13116374 - 23 May 2023
Cited by 6 | Viewed by 4490
Abstract
Photonic integrated circuits (PIC) find applications in the fields of microwaves, telecoms and sensing. Generally, PICs are fabricated on a base of isotropic materials such as SOI, Si3N4, etc. However, for some applications, anisotropic substrates such as LiNbO3 [...] Read more.
Photonic integrated circuits (PIC) find applications in the fields of microwaves, telecoms and sensing. Generally, PICs are fabricated on a base of isotropic materials such as SOI, Si3N4, etc. However, for some applications, anisotropic substrates such as LiNbO3 are used. A thin film of LiNbO3 on an insulator (LNOI) is a promising material platform for complex high-speed PICs. The design and simulation of PICs on anisotropic materials should be performed using rigorous numerical methods based on Maxwell’s equations. These methods are characterized by long calculation times for one simulation iteration. Since a large number of simulation iterations are performed during the PIC design, simulation methods based on approximations should be used. The effective index method (EIM) is an approximation-based method and is widely applied for simulations of isotropic waveguides. In this study, the applicability of EIM for simulations of anisotropic waveguides is analyzed. The results obtained by EIM are compared with the calculation results of a rigorous finite-difference frequency-domain (FDFD) method for evaluation of the EIM’s applicability limits. In addition, radiation losses in waveguides with rough sidewalls are estimated using the Payne–Lacey model and EIM. The results demonstrate the applicability of EIM for the simulation of anisotropic LNOI-based waveguides with cross-section parameters specified in this paper. Full article
(This article belongs to the Special Issue Advances and Application of Lithium Niobate)
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