Using the Bridgman technique, GaSe single crystals were obtained which were mechanically split into plane-parallel plates with a wide range of thicknesses. By heat treatment in air at 820 °C and 900 °C, for 30 min and 6 h, micro- and nanocomposite layers
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Using the Bridgman technique, GaSe single crystals were obtained which were mechanically split into plane-parallel plates with a wide range of thicknesses. By heat treatment in air at 820 °C and 900 °C, for 30 min and 6 h, micro- and nanocomposite layers of Ga
2Se
3–Ga
2O
3 and
β–Ga
2O
3 (native oxide) with surfaces made of nanowires/nanoribbons were obtained. The obtained composite Ga
2Se
3–Ga
2O
3 and nanostructured
β–Ga
2O
3 are semiconductor materials with band gaps of 2.21 eV and 4.60 eV (gallium oxide) and photosensitivity bands in the green–red and ultraviolet-C regions that peaked at 590 nm and 262 nm. For an applied voltage of 50 V, the dark current in the photodetector based on the nanostructured
β–Ga
2O
3 layer was of 8.0 × 10
−13 A and increased to 9.5 × 10
−8 A upon 200 s excitation with 254 nm-wavelength radiation with a power density of 15 mW/cm
2. The increase and decrease in the photocurrent are described by an exponential function with time constants of
τ1r = 0.92 s,
τ2r = 14.0 s,
τ1d = 2.18 s,
τ2d = 24 s,
τ1r = 0.88 s,
τ2r = 12.2 s,
τ1d = 1.69 s, and
τ2d = 16.3 s, respectively, for the photodetector based on the Ga
2Se
3–Ga
2S
3–GaSe composite. Photoresistors based on the obtained Ga
2Se
3–Ga
2O
3 composite and nanostructured
β–Ga
2O
3 layers show photosensitivity bands in the spectral range of electronic absorption bands of ozone in the same green–red and ultraviolet-C regions, and can serve as ozone sensors (detectors).
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