- Article
Properties of Al2O3 Thin Films Grown by PE-ALD at Low Temperature Using H2O and O2 Plasma Oxidants
- Jhonathan Castillo-Saenz,
- Nicola Nedev,
- Benjamín Valdez-Salas,
- Mario Curiel-Alvarez,
- María Isabel Mendivil-Palma,
- Norberto Hernandez-Como,
- Marcelo Martinez-Puente,
- David Mateos,
- Oscar Perez-Landeros and
- Eduardo Martinez-Guerra
Al2O3 layers with thicknesses in the 25–120 nm range were deposited by plasma enhanced atomic layer deposition at 70 °C. Trimethylaluminum was used as organometallic precursor, O2 and H2O as oxidant agents and Ar as a purge gas. The deposition cycle...

