Carbon nanotubes (CNTs) can be grown locally on custom-designed CMOS microstructures to use them as a sensing material for manufacturing low-cost gas sensors, where CMOS readout circuits are directly integrated. Such a local CNT synthesis process usi...
In this paper, a highly monolithic-integrated multi-modality sensor is proposed for intracorporeal monitoring. The single-chip sensor consists of a solid-state based temperature sensor, a capacitive based pressure sensor, and an electrochemical oxyge...
A CMOS-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is proposed and theoretically analyzed. It has a compacted footprint of 43.4 μm2 (R = 2 μm), a data rate of 45 Gbps, an insertion loss of −8 dB, a static extincti...
Silicon nanowire (SiNW) photodetectors exhibit high sensitivity for natural light detection but suffer from significant performance degradation due to thermal interference. To overcome this limitation, this paper presents a high-performance, CMOS-com...
A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any m...
A multifunctional platform based on the microhotplate was developed for applications including a Pirani vacuum gauge, temperature, and gas sensor. It consisted of a tungsten microhotplate and an on-chip operational amplifier. The platform was fabrica...
Developing lead zirconate titanate (PZT)-based electro-optic (EO) modulators is vital for integrated photonics. The high annealing temperature required for the processing of PZT thin films restricts their compatibility with modern complementary metal...
A method to synthesize high-density, vertically-aligned, multi-wall carbon nanotubes (MWCNTs) on an insulating substrate at low temperature using a complementary metal–oxide–semiconductor (CMOS) compatible process is presented. Two factor...
In this paper, we report an on-chip gas sensor based on novel zinc oxide (ZnO) nanocombs for carbon monoxide (CO) sensing. With ZnO gas sensing nanocombs fully integrated on a single silicon chip, the concept of low cost complementary-metal-oxide-sem...
Process and device simulation of a surface acoustics wave (SAW) temperature sensor based AlN material as piezoelectric film, grown on Si wafer and patterned with Al electrodes, is described. CMOS 1 µm process is the process used to simulate a S...
Synthesis of the vertically aligned carbon nanotubes (CNTs) using complementary metal-oxide-semiconductor (CMOS)-compatible methods is essential to integrate the CNT contact and interconnect to nanoscale devices and ultra-dense integrated nanoelectro...
We report a CMOS-compatible ferroelectric memristor based on a TiN/AlScN/n+ Si metal ferroelectric semiconductor (MFS) structure, fabricated entirely via low-temperature sputtering processes. The ultrathin AlScN film exhibits robust ferroelectricity...
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The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible N...
This paper reports on the fabrication, physical characterization, and non-linear modeling of 100 nm slanted-gate GaN-on-silicon HEMTs processed using a CMOS-compatible platform. This technology enables state-of-the-art DC and RF performance, with a m...
Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on...
The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully...
Complementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at...
A novel gas sensor based on multi-layered graphene (MLG) functionalised with gold nanoparticles (Au-NPs) is presented. We demonstrate for the first time that: (1) the signal saturates during the analyte exposure, something which does not occur in the...
Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary m...
Hydrogen gas has attracted attention as a new energy carrier, and simple but highly sensitive hydrogen sensors are required. We fabricated an optical hydrogen sensor based on a silicon microring resonator (MRR) with tungsten oxide (WO3) using a compl...
Carbon nanotubes (CNTs) have, over the years, been used in research as a promising material in electronics as a thermal interface material and as interconnects amongst other applications. However, there exist several issues preventing the widespread...
A complementary metal-oxide-semiconductor (CMOS)-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is designed and analyzed theoretically. The CIPMRM has a compacted footprint of 49.3 μm2 (R = 2 μm), a bit rate of 36.5 Gbps,...
Germanium (Ge) has long been regarded as a promising channel material, owing to its superior carrier mobility and highly tunable electronic band structure. The new generation of low-power electronics is approaching the formation of fully depleted (FD...
To date, several photonic applications have been demonstrated without considerable thermal management efforts. However, in phase-sensitive photonic applications, thermal management becomes of utmost importance. Thermal management of photonic systems...
The substantially lower breakdown electric field of Si compared to GaN necessitates thick buffer layers in Si-based GaN power devices for medium-voltage applications, significantly increasing cost. Recently, sapphire substrates, offering high electri...
To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO3 films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal–org...
This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated,...
Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown I...
Josephson junctions are key elements in superconducting qubits. Their efficient wafer-scale characterization is crucial for process control and optimization, motivating analysis approaches that extend beyond conventional cryogenic measurements. In th...
With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-ox...
Recent progress in data processing, communications and electronics miniaturization is now enabling the development of low-cost wireless sensor networks (WSN), which consist of spatially distributed autonomous sensor modules that collaborate to monito...
Water molecules play a very important role in the hydration and dehydration process of hydrates, which may lead to distinct physical and chemical properties, affecting their availability in practical applications. However, miniaturized, integrated se...
This research work conducted a design and simulation of an ultra-low power all-optically tuned nonlinear ring resonator-based add-drop filter. The purpose of this study is to investigate a CMOS-compatible nonlinear material system for an optical filt...
The enhanced infrared absorbance (IRA) of the complementary metal-oxide-semiconductor (CMOS) compatible thermopile with the subwavelength rectangular-hole arrays in active area is investigated. The finite-difference time-domain (FDTD) method consider...
The field of infrared (IR) photodetection is undergoing rapid development through the emergence of solution-processable nanoparticle (NP)-based materials and fabrication strategies. This review critically examines recent advances in fabrication appro...
This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten via...
During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, a...
We present new developments of CMOS compatible direct conversion terahertz detector operating at room temperature. The rectenna consists of an integrated antenna, realized on the surface of the integrated circuit and connected to a nanometric metalli...
This paper presents the design of a current-mode CMOS self-amplified imager operating in dark conditions, for thermal imaging, which provides an innovative solution for precision thermal contact mapping. Possible applications of this imager range fro...
Electrical double-layer (EDL) synaptic transistors based on organic materials exhibit low thermal and chemical stability and are thus incompatible with complementary metal oxide semiconductor (CMOS) processes involving high-temperature operations. Th...
A voltage reference is strictly required for sensor interfaces that need to perform nonratiometric data acquisition. In this work, a voltage reference capable of working with supply voltages down to 0.5 V is presented. The voltage reference was based...
Local synthesis and direct integration of carbon nanotubes (CNTs) into microsystems is a promising method for producing CNT-based devices in a single step, low-cost, and wafer-level, CMOS/MEMS-compatible process. In this report, the structure of the...
Hall-effect sensors are pervasive in magnetic-field measurement applications, including current sensing and position detection, owing to their excellent compatibility with standard CMOS processes. However, the inherent offset and temperature drift of...
Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O...
Heterogeneous integration of micro-electro mechanical systems (MEMS) and complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) by 3D stacking or wafer bonding is an emerging approach to advance the functionality of microdevices. Al...
An innovative fabrication method to produce a macroporous Si surface by employing an anodic aluminium oxide (AAO) nanopore array layer as an etching template is presented. Combining AAO with a reactive ion etching (RIE) processes, a homogeneous and m...
The availability of quantum microprocessors is mandatory, to efficiently run those quantum algorithms promising a radical leap forward in computation capability. Silicon-based nanostructured qubits appear today as a very interesting approach, because...
We experimentally measured the femtosecond pulse transmission through a silicon-on-insulator (SOI) nanowire waveguide under different temperatures and input pulse energy with a cross-correlation frequency-resolved optical gating (XFROG) measurement s...
Bismuth telluride-based thin films have been investigated as the active material in flexible and micro thermoelectric generators (TEGs) for near room-temperature energy harvesting applications. The latter is a class of compact printed circuit board c...
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